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    IRF113

    Abstract: ir9245 IRF1131
    Contextual Info: International pd-9.i6ha IR F 1131 ON l O R R e c t i f i G f _PRELIMINARY H EXFET P ow er M O S F E T • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


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    IRF113

    Abstract: IRF1131
    Contextual Info: International ISRRectifi PD1,6m IR F 1131 ON 6 T _ P R E L I M IN AR Y HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated


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