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    IRF110

    Contextual Info: i International [^Rectifier PD 9.1373 IRFI101 ON PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 55V RDS on = 0.012Î2 lD = 44A


    OCR Scan     		irfi101ssm52irf110 PDF

    IRF1101

    Abstract: F1101
    Contextual Info: PD - 9.1373A International I ö R Rectifier I R F 1101 ON HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Vdss = 55 V FÎDS on = 0.012Q lD = 49A


    OCR Scan     		irf1101f1101 PDF