IRF 945 Search Results

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

IRF 1640

Abstract: IRF 1640 G irf 1640 mosfet IRFR3410 IRFU3410 b965 AN1001 IRFR120 U120 085mh
Contextual Info: PD - 94505 IRFR3410 IRFU3410 HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Contextual Info: PD - 94538C IRLR7821 IRLU7821 HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use VDSS RDS on max

EIA-541

Abstract: IRFR120 IRFU120 IRLR7821 IRLU7821 R120
Contextual Info: PD - 94538C IRLR7821 IRLU7821 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max

EIA-541

Abstract: IRFR120 IRFU120 IRLR7821 IRLU7821 R120
Contextual Info: PD - 94538C IRLR7821 IRLU7821 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET Power MOSFET VDSS RDS on max

Contextual Info: PD - 94547 IRLR7833 IRLU7833 PROVISIONAL HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use VDSS RDS on max

IRF3205 equivalent

Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Contextual Info: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test

Contextual Info: SMART PR ELIM IN A R Y June 1990 6H 28512 HoduUrTechnologits Pin Assignments Pin No. S yabol NC 1 2 V a 18 DQ^-DQg CS WE OE Vcc Vss 6 7 9 22 a3 A4 GND DQfi 10 11 12 13 14 15 16 17 18 A 15 a 16 A 12 23 24 25 26 27 28 29 30 31 32 33 34 35 36 A 2 A 10 A 11 a5

b714

Abstract: EL4093 EL4093CS Elantec Semiconductor B1680 EL4093C EL4093CN QCX0002
Contextual Info: EL4093C EL4093C 300 MHz DC-Restored Video Amplifier Features General Description  High accuracy DC restoration for video  Low supply current of 9 5 mA typ  300 MHz bandwidth  1500V ms slew rate  0 04% differential gain and 0 02 differential phase into 150X for

IRF 1640

Abstract: IRF 1640 G AN1001 IRFR120 IRFR3410 IRFU3410 R120 220 marking inductor 4.5v to 100v input regulator irf 1640 mosfet
Contextual Info: PD - 94505A IRFR3410 IRFU3410 HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRF 1640

Abstract: IRF 1640 G IRFR3410 irf 1640 mosfet AN1001 IRF P CHANNEL MOSFET 10A 100V IRFR120 IRFU3410 R120 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 94505A IRFR3410 IRFU3410 HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Contextual Info: PD - 94505A IRFR3410 IRFU3410 HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

PD78C10A

Abstract: 78C11 PD78c10AGQ PD78C11A PA78CP14GQ PA-78CP14GQ 78c10 R2M 45 ZC2C 87AD
Contextual Info: 8 t* 7 !• ‘ ì / ' s ' f — ? A / D 3 4 - ? /4 ' O //PD78CllA(A iil6tf>y hALU , ROM, RAM , A / D ^ V ^ - ^ , 'J 7 ^ " f £ 1 ^-y-70^ S I I L , è ) 2 hÌ W i h •# ? >J (ROM /RAM ) ^tÈSS’C è -&CMOS 8 t*7 b • - W ^ n 3 >•b°^- —^ T '’t 'o//PD78C10A(A) ¡¿/¿PD78C11A(A) ^ i>ROM$‘|^t’>t f pHn t',

MOSFET IRF 1540

Abstract: Irf 1540 G irf mosfet 12A 600V 035H IRFP21N60L IRFPE30 PE30
Contextual Info: PD - 94503 IRFP21N60L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 270mΩ 600V 160ns 21A • Motor Control applications

delta dps 298 cp

Abstract: delta dps 298 cp-1 IRF 8030 irf 4710 bbc 598 479 DIODE F4049 sn 94042 Switching power supplies Delta electronics dps MR 4710 ci 4047B
Contextual Info: FAIRCHILD BIPOLAR M IC R O P R O C E S S O R □ATABOOK MACROLOGIC BIPOLAR MICROPROCESSOR OATABOOK FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C alifo rn ia 9 4 0 4 2 c 1976 F a i r c h il d C a m e r a a n d In s t r u m e n t C o r p o r a t i o n / 4 6 4 E llis S t r e e t , M o u n t a i n V i e w , C a li f o r n ia 9 4 0 4 2 / 4 1 5 9 6 2 - 5 0 1 1 / T W X

U38-15

Abstract: IRLR3815 IRLU3815 MOSFET IRF 635
Contextual Info: PD - 94527 IRLR3815 IRLU3815 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 14mΩ

Contextual Info: CONFIDENTIAL ADVANCE INFORMATION Phoenix 3 CD SoC Product Brief Analog Reinvented The Phoenix III CD is an SoC targeted for CD home-theater receivers and mini-components applications. It integrates all required CD AFE/servo, audio and microcontroller MCU functions in a 176-pin Low Profile Quad Flat Pack (LQFP)

IRLR3915

Abstract: IRLU3915
Contextual Info: PD - 94543 IRLR3915 IRLU3915 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 14mΩ

irl44

Abstract: upd78c14 PD7811 PD78C10 pa 66 gf 7047b IC704 R2M 45 sol 4011 be ujt timer
Contextual Info: ? — 5 ? • 2 / — h M O S & $ R Ii|& M O S In te g r a te d C ir c u it N E C 1 î / \ T t 8 7 /¿ P D 7 8 C 1 4 t í 'y h* □ Vb° / / P D 7 8 C 1 4 ¿ 1 6 t í -y h A L U , -T î v - ^ 'y 9 ROM , RAM , 1 - f y 7 “t c # « L , x 9 > ' < ' ¡ (A /D □ W < — ^ f t ê O

IRLR3915

Abstract: IRLU3915
Contextual Info: PD - 94543 IRLR3915 IRLU3915 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 14mΩ

Contextual Info: PD - 94543 IRLR3915 IRLU3915 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 14mΩ

Contextual Info: FEDL7386B-07 Issue Date: Apr. 16, 2014 ML7386/7386B Sub GHz band wireless transmitter IC •Overview ML7386/ML7386B are a low power RF transmitter IC for narrowband system. It includes RF part, MOD part and HOST interface part in single-chip. It supports various frequency band from 200 MHz to 972 MHz. It is possible to

Contextual Info: FEDL7386B-05 Issue Date: Sep. 27, 2013 ML7386/7386B Sub GHz band wireless transmitter IC •Overview ML7386/ML7386B are a low power RF transmitter IC for narrowband system. It includes RF part, MOD part and HOST interface part in single-chip. It supports various frequency band from 200 MHz to 972 MHz. It is possible to

Contextual Info: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V