IRF 613 Search Results

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

abb spad 330

Abstract: spgu 240 a1 spad 330 spgu 48 b2 IBM E54 PCB CIRCUIT MONITOR IBM E54 bs2 International Rectifier irf olivetti s12 IDMT relay spau 330
Contextual Info: SPAU 330 C Overvoltage, undervoltage and residual voltage relay User´s manual and Technical description U > U < U 2 fn= 50Hz Un=100V / 110V U 60Hz Un=100V / 110V (U0 ) Uo 5 IRF U 12 U 23 U 31 IRF IRF SPAU 330 C 18.80 V – n (U o >) n (U o >>) t /t >[ %]

0A95 diode

Abstract: irf 210a
Contextual Info: SL6619 Direct Conversion FSK Data Receiver Preliminary Information DS3853 ISSUE 4.1 April 1998 Ordering Information The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all functions to convert a binary FSK modulated RF signal into a

transistor 4F LNA

Abstract: flo14 flo16 Varactor Diode RF DS3853 AN137 SL6619
Contextual Info: SL6619 Direct Conversion FSK Data Receiver Preliminary Information Supersedes July 1996 version, DS3853 - 3.5 DS3853 - 4.1 April 1998 GTH ADJ TC ADJ IAGC OP TP LIM I VBATT BRF1 BRF CNT AFC2 The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all

DS4410

Abstract: flo16 Varactor Diode RF AN137 flo14 SL6679
Contextual Info: SL6679 Direct Conversion FSK Data Receiver Preliminary Information Supersedes September 1996 version, DS4410 - 1.5 DS4410 - 2.1 April 1998 GTH ADJ TC ADJ IAGC OP TP LIM I VBATT BRF1 BRF CNT AFC2 The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

AN199 philips

Abstract: Audio Power Amplifier Drive an 7070 transformerless variable frequency drive irf transistors AN199-1
Contextual Info: APPLICATION NOTE AN199 Using the SL6609A Direct Conversion Pager Receiver Supersedes March 1995 version, AN199-1.7 AN199-2.0 July 1998 This application note outlines a basic circuit for the SL6609A Direct Conversion Pager Receiver for use in standard paging applications at 153MHz, 282MHz and 450MHz. Fig. 1 is a block diagram of the SL6609A, showing the pin allocation

IRF 260 N

Abstract: irf 44 n IRF 409 irf 9246 P 181 YE IRF 1060 IRF 1040 9249B HEXFET IRF
Contextual Info: IRLI3705N Package Outline HEXFET TO-220 Fullpak Outline Dimensions are shown in millimeters inches 10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.1 23) 4.80 (.189 ) 4.60 (.181 ) -A3.7 0 (.145) 3.2 0 (.126) 16 .0 0 (.630) 15 .8 0 (.622) 2.80 (.110)

14.5M 1982

Abstract: IRF1010E irf 9246 TO-247AC Package IRF1010
Contextual Info: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 2X 1 2

14.5M 1982

Abstract: irf 9246 IRF1010E TO-247AC Package IRF 1010 irf 44 n
Contextual Info: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) NOT ES : 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 )

Contextual Info: • 4302271 0054003 33 H A R R IS 2 77 ■ HAS IRF610/611/612/613 IRF61 OR/611R/612R/613R N-Channel Power MQSFETs Avalanche Energy Rated* August 1991 Features Package T0 -22 0A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • ros on = 1-5 i i and 2 -4 ii • Single Pulse Avalanche Energy Rated*

irfz34n equivalent

Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

irfz34n

Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

IRF 042

Abstract: irf 540 mosfet IRL3803 IRLI3803
Contextual Info: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

IRFIZ34N

Abstract: IRFZ34N MOSFET 150 N IRF
Contextual Info: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier

IRFIZ46N

Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
Contextual Info: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier

IRFZ34N

Abstract: irfz34n equivalent irf 405
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

gyrator

Abstract: Audio Power Amplifier TOSHIBA circuit boards SL6609A 2SC5065 AN4399 DAP236K MA862 SL6619 vcxo philips
Contextual Info: AN4399 Advice on using the SL6619 Application Note AN4399 ISSUE 1.6 April 1996 INTRODUCTION This application note outlines a basic circuit for the SL6619 Direct Conversion Pager Receiver for use in standard paging applications at 153MHz, 282MHz and 450MHz. An Evaluation Board based on 282MHz will be described and detailed setup procedure provided.

irf 480

Abstract: IRFIZ24E IRFZ24N IRFz24n equivalent
Contextual Info: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier

1501a

Abstract: IRFZ24N IRFIZ24N irf 480
Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier

Equivalent IRF 44

Abstract: ultra low igss pA IRL2505 IRLI2505
Contextual Info: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

irf 9246

Abstract: IRF1010E 14.5M 1982 irf1010
Contextual Info: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 2X 1 2

irf 44 n

Abstract: 1329B IRLIZ34N IRLZ34N
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

IRFIZ24N

Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier