IRF 613 Search Results

IRF 613 Datasheets (21)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRF613	Fairchild Semiconductor	N-Channel Power MOSFETs, 3.5A, 150-200V	Scan	PDF	152.52KB	5
IRF613	FCI	POWER MOSFETs	Scan	PDF	204.39KB	4
IRF613	Frederick Components	Power MOSFET Selection Guide	Scan	PDF	204.39KB	4
IRF613	General Electric	Power Transistor Data Book 1985	Scan	PDF	130.08KB	2
IRF613	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A.	Scan	PDF	168.9KB	5
IRF613	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF	179.82KB	5
IRF613	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF	44.28KB	1
IRF613	International Rectifier	N-Channel Power MOSFETs	Scan	PDF	36.85KB	1
IRF613	Motorola	European Master Selection Guide 1986	Scan	PDF	37.56KB	1
IRF613	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	86.18KB	1
IRF613	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	125.28KB	1
IRF613	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	114.58KB	1
IRF613	Unknown	FET Data Book	Scan	PDF	289.33KB	5
IRF613	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	41.14KB	1

IRF613	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	41.14KB	1
IRF613	National Semiconductor	N-Channel Power MOSFETs	Scan	PDF	28.93KB	1
IRF613	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF	110.5KB	1
IRF613(R)	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
IRF613R	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF	196.07KB	5
IRF613R	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF	42.05KB	1

IRF 613 Price and Stock

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Harris Semiconductor IRF613 IRF613
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	IRF613		2,000		871	1 - 10 - 100 - 1000 $0.40 10000 $0.40	Buy Now
	IRF613		940		871	1 - 10 - 100 - 1000 $0.43 10000 $0.43	Buy Now
Rochester Electronics	IRF613		2,940		1	1 - 10 - 100 $0.38 1000 $0.32 10000 $0.28	Buy Now
Infineon Technologies AG IRF6613TRPBF MOSFETs 40V N-CH HEXFET 3.4mOhms 42nC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IRF6613TRPBF		10,410			1 $2.69 10 $1.41 100 $1.24 1000 $0.99 10000 $0.91	Buy Now
New Jersey Semiconductor IRF613 Trans MOSFET N-CH Si 150V 2A 3-Pin(3+Tab) TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRF613		2,603		1	1 $1.80 10 $1.80 100 $0.67 1000 $0.47 10000 $0.47	Buy Now
New Jersey Semiconductor Products Inc IRF613
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRF613		2,082			1 $2.40 10 $2.40 100 $2.40 1000 $0.62 10000 $0.60	Buy Now

IRF 613 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor 4F LNA Abstract: flo14 flo16 Varactor Diode RF DS3853 AN137 SL6619 Contextual Info: SL6619 Direct Conversion FSK Data Receiver Preliminary Information Supersedes July 1996 version, DS3853 - 3.5 DS3853 - 4.1 April 1998 GTH ADJ TC ADJ IAGC OP TP LIM I VBATT BRF1 BRF CNT AFC2 The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all	Original	SL6619 DS3853 SL6619 transistor 4F LNA flo14 flo16 Varactor Diode RF AN137	PDF
DS4410 Abstract: flo16 Varactor Diode RF AN137 flo14 SL6679 Contextual Info: SL6679 Direct Conversion FSK Data Receiver Preliminary Information Supersedes September 1996 version, DS4410 - 1.5 DS4410 - 2.1 April 1998 GTH ADJ TC ADJ IAGC OP TP LIM I VBATT BRF1 BRF CNT AFC2 The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all	Original	SL6679 DS4410 SL6679 flo16 Varactor Diode RF AN137 flo14	PDF
irfz34n equivalent Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier	Original	1276C IRFZ34N O-220 irfz34n equivalent IRFZ34N IRFZ34N MOSFET *rfz34n	PDF
IRF 042 Abstract: irf 540 mosfet IRL3803 IRLI3803 Contextual Info: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D	Original	1320B IRLI3803 O-220 IRF 042 irf 540 mosfet IRL3803 IRLI3803	PDF
W922 Abstract: IRFIZ24E IRFZ24N EV700 irf*24n Contextual Info: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier	Original	IRFIZ24E O-220 W922 IRFIZ24E IRFZ24N EV700 irf*24n	PDF
IRFIZ34N Abstract: IRFZ34N MOSFET 150 N IRF Contextual Info: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier	Original	IRFIZ34N O-220 IRFIZ34N IRFZ34N MOSFET 150 N IRF	PDF
IRFIZ46N Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent Contextual Info: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier	Original	IRFIZ46N O-220 IRFIZ46N IRFZ46N MOSFET IRF 630 IRFZ46N equivalent	PDF
IRFZ34N Abstract: irfz34n equivalent irf 405 Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier	Original	1276C IRFZ34N O-220 IRFZ34N irfz34n equivalent irf 405	PDF
gyrator Abstract: Audio Power Amplifier TOSHIBA circuit boards SL6609A 2SC5065 AN4399 DAP236K MA862 SL6619 vcxo philips Contextual Info: AN4399 Advice on using the SL6619 Application Note AN4399 ISSUE 1.6 April 1996 INTRODUCTION This application note outlines a basic circuit for the SL6619 Direct Conversion Pager Receiver for use in standard paging applications at 153MHz, 282MHz and 450MHz. An Evaluation Board based on 282MHz will be described and detailed setup procedure provided.	Original	AN4399 SL6619 SL6619 153MHz, 282MHz 450MHz. gyrator Audio Power Amplifier TOSHIBA circuit boards SL6609A 2SC5065 AN4399 DAP236K MA862 vcxo philips	PDF
1501a Abstract: IRFZ24N IRFIZ24N irf 480 Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier	Original	IRFIZ24N O-220 1501a IRFZ24N IRFIZ24N irf 480	PDF
Equivalent IRF 44 Abstract: ultra low igss pA IRL2505 IRLI2505 Contextual Info: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D	Original	IRLI2505 O-220 Equivalent IRF 44 ultra low igss pA IRL2505 IRLI2505	PDF
irf 44 n Abstract: 1329B IRLIZ34N IRLZ34N Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description	Original	1329B IRLIZ34N O-220 irf 44 n 1329B IRLIZ34N IRLZ34N	PDF
IRFIZ24N Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet Contextual Info: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier	Original	IRFIZ24N O-220 IRFIZ24N 1501a IRFZ24N irf 480 irf 044 mosfet	PDF
Equivalent IRF 44 Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34 Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description	Original	1329B IRLIZ34N O-220 Equivalent IRF 44 IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34	PDF

IRf 80 12 MOSFET Abstract: IRL2505 IRLI2505 IRF 042 Equivalent IRF 44 EQUIVALENT OF IRL2505 Contextual Info: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D	Original	IRLI2505 O-220 IRf 80 12 MOSFET IRL2505 IRLI2505 IRF 042 Equivalent IRF 44 EQUIVALENT OF IRL2505	PDF
irf 480 Abstract: irl3803 equivalent ultra low igss pA IRL3803 IRLI3803 irf 680 Contextual Info: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D	Original	1320B IRLI3803 O-220 irf 480 irl3803 equivalent ultra low igss pA IRL3803 IRLI3803 irf 680	PDF
IRFZ34N Abstract: IRF 250 Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier	Original	1276C IRFZ34N O-220 IRF1010 IRFZ34N IRF 250	PDF
HFA25PB60 Abstract: IRFP250 Contextual Info: PD -2.338 HFA25PB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching	Original	HFA25PB60 112nC HFA25PB60 IRFP250	PDF
gruner Abstract: AF125 VEB Funkwerk Erfurt iran Erfurt Planschirm 20/RGI TGL Contextual Info: Pl.Nr. 1303 26 553 Einsprüche bU 30.6.66 andie durchfdhrende Stelle mit Kopieorrdis beauftragte ZfS Entwurf DDR-Standard OK 6 2 1 .3 8 5 .8 3 2 . Mai 966 TGL, Elektronenröhren OSZILLOGRAPHENRÖHRE B 13 S5 ?^76KTpOHHblB yJ9Mnbi OciiM^viorp^iMsecKaii ipyÍKa 613 55	OCR Scan	11iiiitBiF gruner AF125 VEB Funkwerk Erfurt iran Erfurt Planschirm 20/RGI TGL	PDF
irl3803 equivalent Abstract: 71A marking IRL3803 IRLI3803 irf 680 MOSFET 150 N IRF Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1320A IRLI3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm	Original	IRLI3803 irl3803 equivalent 71A marking IRL3803 IRLI3803 irf 680 MOSFET 150 N IRF	PDF
IRLIZ34N Abstract: MOSFET IRF 630 Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated	Original	IRLIZ34N IRLIZ34N MOSFET IRF 630	PDF
irf 9246 Abstract: IRF9Z34N Contextual Info: IRF9Z34N Package Outline TO-220AB Outline Dimensions are shown in millimeters inches 2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1 5 ) 1 0 . 2 9 (. 4 0 5 ) -B - 3 . 7 8 (. 1 4 9 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) -A - 1 .3 2 (. 0 5 2 )	Original	IRF9Z34N O-220AB irf 9246 IRF9Z34N	PDF
HFA30PA60C Abstract: IRFP250 irf 44 ns Contextual Info: PD -2.336 rev. A 04/98 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI	Original	HFA30PA60C HFA30PA60C IRFP250 irf 44 ns	PDF
IRF540N Abstract: IRFP140N Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier	Original	91343B IRFP140N O-247 IRF540N IRFP140N	PDF

IRF 613 Search Results

IRF 613 Datasheets (21)

IRF 613 Price and Stock

Harris Semiconductor IRF613

Infineon Technologies AG IRF6613TRPBF

New Jersey Semiconductor IRF613

New Jersey Semiconductor Products Inc IRF613

IRF 613 Datasheets Context Search

transistor 4F LNA

DS4410

irfz34n equivalent

IRF 042

W922

IRFIZ34N

IRFIZ46N

IRFZ34N

gyrator

1501a

Equivalent IRF 44

irf 44 n

IRFIZ24N

Equivalent IRF 44

IRf 80 12 MOSFET

irf 480

IRFZ34N

HFA25PB60

gruner

irl3803 equivalent

IRLIZ34N

irf 9246

HFA30PA60C

IRF540N