IRF 481 Search Results

Equivalent IRF 44

Abstract: fifo buffer m 9403 1N3064 9403
Contextual Info: Signetics 9403 64-Bit FIFO Buffer Memory Product Specification Logic Products FEATURES FUNCTIONAL DESCRIPTION • 10MHz Serial or Parallel Data Rate • Serial or Parallel Input and Output • Expandable Without External Logic • Three-State Outputs • Fully TTL-Compatlble

ICL 7108

Abstract: icl 7103 irf 940 for ICL 7106 ICl 7106 N9403N
Contextual Info: S ig n eU cs 9403 64-Bit FIFO Buffer M em ory Product Specification Logic Products FEATURES FUNCTIONAL DESCRIPTION • 10MHz Serial or Parallel Data Rate As shown in Figure 1, the 9403 consists of three parts which operate asynchro­ nously and are virtually independent.

Equivalent IRF 44

Abstract: irf 44 n N9403N irf 44 ns Equivalent IRF 33 9403 1N3064 irf 480 IRF 480 equivalent irf 150 equivalent
Contextual Info: S ig n e tic s 9403 64-Bit FIFO Buffer M em ory Product Specification Logic Products FEATURES FUNCTIONAL DESCRIPTION • 10MHz Serial or Parallel Data R ate As shown in Figure 1, the 9 4 0 3 consists of three parts which op erate asynchro­ nously and are virtually independent.

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TSL2771

Abstract: sensor LDR curve ldr sensor FOR LIGHT SENSING TSL27711FN TSL27711 TSL27713 TSL27713FN ldr 1000 nm LDR sensor circuit and implementation TAOS100A
Contextual Info: TSL2771 LIGHT-TO-DIGITAL CONVERTER with PROXIMITY SENSING r r TAOS100A − FEBRUARY 2010 Features PACKAGE FN DUAL FLAT NO-LEAD TOP VIEW D Ambient Light Sensing and Proximity Detection in Single Device D Ambient Light Sensing (ALS) − − − − Approximates Human Eye Response

pd7810

Abstract: PD7811 PD7810G-36 PD7811G-36 PD7811G 7810 NEC R2M 45 F147 nec uPD7811 irf 480
Contextual Info: 4 ^ /X Y "* //PD7810/11 8-BIT, S IN G L E -C H IP n m o s m ic r o c o m p u te r s W ITH A / D C O N V E R T E R NEC Electronics Inc. Description Pin Configuration T h e ¿/PD7810 and ¿/PD7811 sin gle-chip m icro ­ com puters integrate sophisticated on-chip peripheral

d7810

Abstract: PD7811 nec 7810 MPD7811G-36 nec d7810 R2M 45 LA7050 49-000602C nec uPD7811 ML160
Contextual Info: NEC ¿ÍPD7810/11 8 -B IT , S IN G L E -C H IP N M O S M IC R O C O M P U T E R S W IT H A / D C O N V ER TER NEC Electronics Inc. D escription The ¿ /P D 7 8 1 0 Pin C onfiguration and ¿ /P D 7 8 1 1 s in g le - c h ip m ic r o ­ PAoC PA.C 2 pa2 c 3 pa3 C 4

delta dps 298 cp

Abstract: delta dps 298 cp-1 IRF 8030 irf 4710 bbc 598 479 DIODE F4049 sn 94042 Switching power supplies Delta electronics dps MR 4710 ci 4047B
Contextual Info: FAIRCHILD BIPOLAR M IC R O P R O C E S S O R □ATABOOK MACROLOGIC BIPOLAR MICROPROCESSOR OATABOOK FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C alifo rn ia 9 4 0 4 2 c 1976 F a i r c h il d C a m e r a a n d In s t r u m e n t C o r p o r a t i o n / 4 6 4 E llis S t r e e t , M o u n t a i n V i e w , C a li f o r n ia 9 4 0 4 2 / 4 1 5 9 6 2 - 5 0 1 1 / T W X

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

MOSFET IRF 1018 Datasheet

Abstract: IRLR024Z IRLU024Z
Contextual Info: PD - 95825 IRLR024Z IRLU024Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features n n n n n n Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 58mΩ

irf 5205

Abstract: MBC237 uma1005t IRF 708 3296 Variable Resistor SSOP20 application notes frd 3 pin 3296 Variable Resistor
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UMA1005T Dual low-power frequency synthesizer Preliminary specification Supersedes data of September 1992 File under Integrated Circuits, IC03 Philips Semiconductors November 1994 Philips Semiconductors Preliminary specification

irf p 1806

Contextual Info: International Rectifier IÖR PD - 5.059B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-Fast Speed IGBT Featu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

MOSFET IRF 630

Contextual Info: vx-b’J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S Case : E-pack 1 i : iate 2 4 1 IIraln 3 : Source [Unit : mm] ‘I - 1; -‘J 1 -7 $, &I 11 2 3-, P12, 7-l Q f ‘g ( 7’: $ 1 1 Lead type is available. See P. 12, 7-l

EIA-541

Abstract: IRF7601 d2s diode
Contextual Info: PD - 9.1261D IRF7601 HEXFET Power MOSFET l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET VDSS = 20V RDS on = 0.035Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

Contextual Info: PD - 9.1261D IRF7601 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D S 1 8 S 2 7 D S 3 6 D 4 5 D G VDSS = 20V RDS(on) = 0.035Ω

IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional

Contextual Info: IRFR15N20D IRFU15N20D I-Pak IRFU15N20D D-Pak IRFR15N20D Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

transistor tt 2170

Abstract: hudi HD64F2170 Nippon capacitors
Contextual Info: REJ09B0149-0200Z The revision list can be viewed directly by cliking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2172Group Hardware Manual

HD64F2170

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

transistor tt 2170

Abstract: ep3285 Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

IRF MOSFET 100A 200v

Abstract: AN1001 IRFR120 IRFR15N20D IRFU120 IRFU15N20D U120
Contextual Info: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Transistor Mosfet N-CH 400V 40A

Abstract: AN-994 IRFR120 R120 Transistor Mosfet N-CH 200V 40A IRF 548
Contextual Info: PD - 95192 IRG4RC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

TPS2330

Abstract: TPS2300 TPS2331 GMK316F475Z schematic diagram 48V telecom 12061C104KAT2A
Contextual Info: TPS2330 48ĆV Telecom Hot Swap Evaluation Module and Interface Card User’s Guide April 2001 PMP PD & PS SLVU048 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information