IRF 2004 Search Results

Contextual Info: 10 REEL a NOTES 55450-* OTl¥jffl\i-SZ3) ,'rf3sSD-55450-010£#irF£lA 1. IN THE PACKAGE , PART NO. 55 45 0-» *»* DETAILED DIMENSIONS , SEE SD-55450-010. 2. : Q Q o m / 'j- ii NUMBER OF CONNECTORS ¡8 8 0 PCS/REEL SISWUSlql 3, PULL OUT DIRECTION LEAD TAPE LENGTH

LD162DZ_DS

Contextual Info: Euvis LD162DZ_G0 Datasheet Email: Sales@euvis.com Tel: 818 879-7980 Sales Department Fax: (818) 879-9696 Document name: LD162DZ_DS_G0 Release date: 02/27/2004 Related document: LD162DZ_DS_5G4 @ 01/09/2004 Version: G0 Revision: (none) Euvis Laser Diode Driver, LD162DZ

J3050

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T 2004 30,50 POS By P U B L IC A T IO N R IG H TS AU G ,2 0 0 4 - REVISIO N S RESERVED. - LTR 40,60 POS D E S C R IP T IO N REVISED 2- 0 2 .1 5 PER DATE ECO —1 1 - 0 0 5 0 3 3

Contextual Info: 2 T H IS D R A W IN G C O P Y R IG H T IS U N P U B L IS H E D . 2004 30,50 POS BY ^ C O RELEASED E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S AU G , 2 0 0 4 . R E V IS IO N S RESERVED. LTR 40,60 POS 2- 0 2 .1 5 PLUG HOUSING

flo16

Contextual Info: SL6619 Direct Conversion FSK Data Receiver Data Sheet March 2004 Ordering Information The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all functions to convert a binary FSK modulated RF signal into a

IRF 1640

Abstract: GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC
Contextual Info: • M fr Qty/Note 7 A0 D3 M5 000035fl ITS ■ Part Num ber M fr Qty/Note Part Num ber Mfr SM C 6658 GAL20V8QS-10LV! NSC 1995 HA1-2541-7 H AR 460 SMC 13390 GAL20V8QS-15LNC NSC 15169 HA1-2541/883 H AR 387 SMC 401 GAL20V8QS-15LVC NSC 1031 HA1-2655-5 H AR 210

IRF 535

Abstract: IRF 100A IRF 2004 mosfet 23 Tsop-6 irf 30A IRF5800 IRF5850 SI3443DV TSOP6 Marking Code 17
Contextual Info: IRF5800PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

Contextual Info: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from

IRf 334

Contextual Info: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

bdl 39

Abstract: SPC-630 Hamamatsu avalanche diode BDL-473-SMC galvo scanner Picosecond Pulse Labs SPC-730 12V fluo SPC-130 SPC-535
Contextual Info: Becker & Hickl GmbH Technology Leader in Photon Counting Technology Leader in Photon Counting About bh Founded in 1993, Becker & Hickl have introduced a proprietary time-correlated single-photon counting principle that made TCSPC more than 100 times faster than the existing devices. Moreover, bh introduced a multi-dimensional TCSPC process that

TA2015FNG

Contextual Info: TA2015FNG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2015FNG Ripple Filter 1.5V USE The TA2015FNG is a ripple filter IC, which is developed for low voltage operation (1.5V). It is especially suitable for supplying voltage for headphone

IRF MOSFET 100A 200v

Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
Contextual Info: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current

power MOSFET IRF data

Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Contextual Info: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF Power MOSFET code marking

Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
Contextual Info: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

irf MOSFET p-CH

Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
Contextual Info: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description

IRF5850

Abstract: IRF5801 IRF5806 IRF5851 IRF5852 I3443DV IRF5803 MOSFET IRF 5805 IRF 2004
Contextual Info: IRF5810PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

AN1001

Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Contextual Info: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

IRF Power MOSFET code marking

Abstract: IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94
Contextual Info: PD - 96029 IRF5800PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits

IRLTS6342TRPBF

Abstract: IRLTS6342 m4570 irlts6342tr irf5850
Contextual Info: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits

mosfet p-channel 300v irf

Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
Contextual Info: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF 511 MOSfet

Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
Contextual Info: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier

IRF MOSFET 10A P

Abstract: IRF5810 IRF5850 IRF5851 IRF5852
Contextual Info: PD - 95469A IRF5810PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free Description l l VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A These P-channel HEXFET® Power MOSFETs from