IRC GS-3 TO Search Results

MIL-R-26

Abstract: MIL-R-22684 IRC gs-3 C 828 gs-3 GS-3 resistor IRC GS-3 TO
Contextual Info: Thick Film Semi-Precision Metal Glaze Power Resistors IRC Wire and Film Technologies Division GS-3 Series • Power rating of 3W @25°C; 2W @ 70°C • Resistance range from 1Ω to 3MΩ • Standard tolerances of ±1%, ±2%, ±5% • Superior surge performance

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2412 is N -C h a n n e l MOS Field E ffect T ra n s is to r de­ sig n e d fo r high speed s w itc h in g a p p lic a tio n s . FEATURES •

tc 8066

Abstract: 2sk2370 K2369
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2369/2SK2370 is N -C hannel MOS Field E ffect T ra n sis- PACKAGE D IM E N S IO N S in m illim e te rs to r d e sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .

5T3824

Abstract: A5T3821 5T3821 a5t3822 a5t3 2N5358 2N5364 A5T3824 5T3822 5T3823
Contextual Info: T Y P E S A5T3821 T H R U A5T3824 N - C H A N N E L S IL IC O N J U N C T I O N F IE L D -E F F E C T T R A N S IS T O R S B U L L E T I N N O . D L -S 7 1 1 1 5 0 7 , J U L Y 1971 S ILE C T * F IE L D -E F F E C T T R A N SISTO R S* • Rugged, One-Piece Construction with Standard TO -18 100-mil Pin-Circle

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS T his p ro d u c t is n -C h a n e l M O S F ield E ffe c t T ra n s is to r d e s ig n e d high in m illim e te rs c u rre n t s w itch in g a p p lica tio n .

2sk2486

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2486 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2486is N-Channel MOS Field Effect T ra n s is to r designed PACKAGE D IM E N S IO N S in m illim e te r fo r hig h v o lta g e s w itc h in g applications,

STD5N20

Contextual Info: STD5N20 N - CHANNEL 200V - 0.7CI - 5A - TO-251/TO-252 POWER MOS TRANSISTOR TYPE STD5N 20 V dss 200 V R d S o Id ii < 0.8 Q. 5 A • . . . . . . . TYPICAL RDS(on) = 0.7 £1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: IRFP450 N - CHANNEL 500V - 0.33Í2 - 14A - TO-247 PowerMESH MOSFET TYPE IR F P 4 5 0 V R d s s 500 V d Id S o ii < 0.4 Q. 14 A • TYPICAL RDS(on) = 0.33 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED

Contextual Info: IRF730 N - CHANNEL 400V - 0.75 £2 - 5.5A - TO-220 PowerMESH MOSFET TYPE IR F 7 3 0 V dss 400 V R d Id S o ii < 1 Q. 5 .5 A • TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED

simple circuit diagram of electronic choke low cost

Abstract: dp502 20SV68M IT 236 schaffner n1 sot23 Sanyo capacitors simple circuit diagram of electronic choke 680R BAT54 QSOP16
Contextual Info: ZXRD1000 SERIES
PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple

Contextual Info: STW80NE06-10 N - CHANNEL 60V - 0.0085ft - 80A - TO-247 STripFET ” POWER MOSFET TYPE S T W 8 0 N E 0 6 -1 0 V dss 60 V R d Id S o i i <0.01 Q. 80 A . • TYPICAL RDS(on) = 0.0085 EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED . APPLICATION ORIENTED

Contextual Info: IRFBC40 N - CHANNEL 600V - 1.0 Í2 - 6.2 A - TO-220 PowerMESH MOSFET TYPE IR F B C 4 0 • . . . . V dss 600 V R d Id S o ii < 1 .2 Q. 6 .2 A TYPICAL RDS(on) = 1.0 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: IRF740 N - CHANNEL 400V - 0.48 £2 -1 0 A - TO-220 PowerMESH MOSFET TYPE IR F 7 4 0 V d s s 400 V R d Id S o ii < 0.5 5 Q. 10 A • TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED

Contextual Info: STW50NB20 N - CHANNEL 200V - 0.047ft - 50A - TO-247 PowerMESH MOSFET V TYPE STW 50NB20 . R d S o ii Id < 0 .0 5 5 Q. 50 A d ss 200 V T Y P IC A L R Ds(on) = 0 .0 4 7 £2 . E X T R E M E L Y H IG H dv/dt C A P A B IL IT Y . . . . ± 3 0 V G A T E T O S O U R C E V O L T A G E R A T IN G

Contextual Info: STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Î2 - 14.6A TO-247/ISOWATT218 PowerMESH MOSFET TYP E V STW 15NB50 STH15NB50FI dss 500 V 500 V R D S o n Id < 0 .3 6 Q. < 0.3 6 Q. 14 .6 A 10 .5 A TYPICAL R D S (on) = 0.33 . EXTREMELY HIGH dv/dt CAPABILITY . ± 30V GATE TO SOURCE VOLTAGE RATING

AX 67

Contextual Info: STE38NB50 N - CHANNEL 500V - 0.11 i l - 38A - ISOTOP PowerMESH MOSFET TYPE V STE38NB50 . . . . . . . dss 500 V R D S o n < 0.1 3 a Id 38 A TYPICAL RDs(on) =0.11 £2 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ /¿PA1712 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel M O S Field Effect Transis­ tor designed for power m anagem ent applications of

Contextual Info: STP50NE10 N -CHANNEL 100V -0.021 £2- 50A TO-220 STripFET POWER MOSFET TYPE S T P 50 N E 1 0 . . . . . V dss 100 V R d S o Id ii < 0 .0 2 7 Q. 50 A TYPICAL R D S (on) = 0.021 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

Contextual Info: IRFP254A A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

10NB60

Contextual Info: STW10NB60 N - CHANNEL 600V - 0.69ft - 1 0A - TO-247 PowerMESH MOSFET TYPE V STW 10NB60 • . . . . dss 600 V R d Id S oii < 0 .8 Q. 10 A TYPICAL R D S (on) = 0.69 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: STW 6NB100 N - CHANNEL 1000V - 2.3Î1 - 5.4A - TO-247 PowerMESH MOSFET TYPE V dss S T W 6 N B 1 00 • . . . . . 1000 v R d S oii Id < 2 .8 Q. 5 .4 A TYPICAL R D S (on) = 2.3 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: IRFP254 A d van ced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

Contextual Info: STE26NA90 N - CHANNEL 900V - 0.25^ - 26A - ISOTOP FAST POWER MOSFET TYPE V STE26NA90 • . . . . . dss 900 V R d Id S o i i < 0 .3 Q. 26 A TYPICAL R D S (on) = 0.25 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE

j448

Abstract: P-CHANNEL NEC -MOS nec j448
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ448 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S J448 is P-C hannel MOS Field E ffect T ra n s is to r de­ sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s . FEATURES • Low O n-R esistance