IR51H Search Results

IR Half-bridge

Contextual Info: Data Sheet No. PD-6.060D IR51HD310 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Bootstrap diode integrated into package

Contextual Info: Data Sheet No. PD-6.057D IR51H420 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs

IR51H310

Abstract: diode in 400
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.060D IR51H310 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

ls bridge rectifier

Abstract: high frequency Self-Oscillating IR51H214
Contextual Info: Data Sheet No. PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs

IR51H310

Contextual Info: Data Sheet No. PD-6.060D IR51H310 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs

Contextual Info: Data Sheet No. PD-6.060D nternationai K JR Rectifier IR51HD310 SELF-OSCILLATING HALF-BRIDGE Features Product Summary • Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation

IR2151

Abstract: IR51HD224 zener diode 20w
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

IR2151

Abstract: IR51H737 IR51HD737
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.057D IR51HD737 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

60067

Abstract: half-bridge IR51H420 IR51H214 IR51H224 IR51H310 IR51H320 IR51H737 IR51HD214 IR51HD224
Contextual Info: Control Integrated Circuit Hybrid www.irf.com Part Number VIN V R DS(on) ( Ω) PD @ TC = 25°C (W) Duty Cycle Deadtime (µs) Fax on Demand Number Self-Oscillating Half-Bridge IR51H214 250 2.0 2.0 50% 1.2 60058 IR51H224 250 1.1 2.0 50% 1.2 60059 IR51H310

half-bridge

Abstract: high speed bridge rectifier IR2151 IR51HD224 mosfet Vcc 250v
Contextual Info: Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package

IR2151

Abstract: IR51HD214 IRFC214
Contextual Info: Data Sheet No. PD-6.058D IR51HD214 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package

cmos 555 timer

Abstract: ir2151 IR51H737 PD6061
Contextual Info: International S Rectifier Data Sheet No. PD-6.061A IR51H737 SELF-OSCILLATING HALF-BRIDGE Features Product Summary Floating channel designed for bootstrap operation Fully operational to +300V Tolerant to negative transient voltage dV/dt immune Undervoltage lockout

IRFC420

Abstract: IR51H420 IR2151 2.5v zener chip
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.057D IR51H420 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

Contextual Info: International S Rectifier Data Sheet No. PD-6.060C IR51H310 SELF-OSCILLATING HALF-BRIDGE Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Undervoltage lockout

Contextual Info: Data Sheet No. PD-6.067B n fern a IR51H320 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs

555 TIMER IC PARAMETERS

Abstract: Zener Diodes 300v IR51HD737 IR2151 IR51H737 IC 555 Internal block diagram
Contextual Info: Data Sheet No. PD-6.057D IR51HD737 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package

555 timer construction and components

Abstract: ic 067b power supply 400v circuit diagram IR2151 IR51HD320 RECOVERY TIME MOSFET ZENER DIODE WITH 5 VOLTS OUTPUT IRFC320
Contextual Info: Data Sheet No. PD-6.067B IR51HD320 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package

Contextual Info: International llQR]Rectifier Data Sheet No. PD-6.058C IR51H214 SELF-OSCILLATING HALF-BRIDGE Features • ■ ■ Product Summary Floating channel designed for bootstrap operation Fully operational to +250V Tolerant to negative transient voltage dV/dt immune

Contextual Info: Data Sheet No. PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE Features Product Summary • Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs

Contextual Info: Data Sheet No. PD-6.057D nternatïona IR51HD420 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in halt-bridge contiguration 500V Rated Breakdown Voltage ■ High side gate drive designed tor bootstrap operation ■ Bootstrap diode integrated into package

Zener 224

Abstract: diode 420 IR53H(D)420-P Zener diode 224 IR2151 Diode 224
Contextual Info: Preliminary Data Sheet No. PD60083-K IR51H D 224 IR51H(D)320 IR51H(D)420 (NOTE: For new designs, we recommend the IR53H(D)420-P) SELF-OSCILLATING HALF BRIDGE Product Summary Features • • • • Output Power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation

rtv 157

Contextual Info: Data Sheet No. PD-6.057D IR51H737 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs

ELECTRONIC BALLAST compact LAMP SCHEMATIC

Abstract: diodes IN4001 Electronic ballast 100W ballast schematic IN4001 diode IN4001 wiring diagram lamp 100w inverter schematic diagram resonant half bridge ballast schematic ir2151
Contextual Info: DESIGN TIP International Rectifier • 233 Kansas Street El Segundo CA 90245 USA Ultra-Compact Flourescent Ballasts using the IR51H420 Hybrid Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Figure 1 The IR2151 has set the standard for low cost compact fluorescents which demand

PD-60083H

Contextual Info: Preliminary Data Sheet No. PD-60083H IR51H D XXX (NOTE: For new designs, we recommend IR’s new products IR53H(D)XXX) SELF-OSCILLATING HALF BRIDGE Features Product Summary • • • • VIN (max) 250V - H(D)214/224 300V - H(D)737 400V - H(D)310/320 500V - H(D)420