IR23 Search Results

IRS2304

Abstract: IR2304 AN-1112 floating mosfet driver
Contextual Info: Application Note AN-1112 IRS2304 and IR2304 Comparison By Jason Nguyen, Min Fang, David New Table of Contents Page Introduction .1 Block Diagrams .2

IR2301

Abstract: IR2301S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MS-012AA
Contextual Info: Data Sheet No. PD60201-B IR2301 S HIGH AND LOW SIDE DRIVER Features Packages • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 5 to 20V

Contextual Info: Bulletin I0205J 07/98 IR230SG.HCB SERIES PHASE CONTROL THYRISTORS Junction Size: Square 230 mils Wafer Size: 4" V RRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: n. a. Major Ratings and Characteristics Parameters

40EPS

Abstract: IR230DM12CCB
Contextual Info: Bulletin I0121J rev. A 02/97 IR230DM12CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters

IR2302

Abstract: marking MDt IR2302S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MS-012AA 22B marking DRIVER igbt WITH INPUT FOR SHUTDOW
Contextual Info: Data Sheet No. PD60207 Rev.A IR2302 S & (PbF) HALF-BRIDGE DRIVER Packages Features • Floating channel designed for bootstrap operation • • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

IR2308

Abstract: DT97-3 Marking code 2106 540ns IR2308S MS-012AA
Contextual Info: Data Sheet No. PD60209 revC IR2308 S & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

IR2339

Abstract: VLN 2003 IR2339N
Contextual Info: SHARP ELEK/ MELEC DIV 7"- 7 3 - S ' S 1SE 0 | filfiQ7Ta 0Q0207Q Quad Comparator IR2339/IR2339N IR2339/IR2339N • T | Quad Comparator Pin Connections Description The IR2339/IR2339N is a high performance quad comparator, which operates from a single power supply to a wide range of voltages. It’s outputs are

Contextual Info: Data Sheet No. PD60201 Rev.D IR2301 S & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 5 to 20V

IR2E31A

Abstract: IR2E27A IR2E09 Sharp IR2E27A IR2E27A SHARP IR2e01 IR2E12 Sharp IR2E09 1R2E31 IR2E27
Contextual Info: Alphanumeric Index Alphanumeric Index Model No. IR2339 IR2339.V < IR2402 Page Model No. Page L78 178 101 < 'lR2C30N 1R2C32A 83 { IR2403 <! IR2405 56 38 < IR2406 608 608 < 1R2406G IR2408 ^ IR2410 [R2411 C IR2412A L IR2415 i IR2416 1, IR2419 / IR2422 Z IR2425

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

IRS2301

Abstract: AN11133 AN11134 IR2301 AN11131 AN-1113
Contextual Info: Application Note AN-1113 IRS2301 and IR2301 Comparison By Jason Nguyen, Min Fang, David New Table of Contents Page Introduction .1 Block Diagrams .2

40EPS

Abstract: IR230DM16CCB
Contextual Info: Bulletin I0117J 09/00 IR230DM16CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters Units VFM

Contextual Info: Bulletin 10121J rev. A 02/97 International IQR Rectifier IR230DM12CCB STANDARD RECOVERY DIODES • Junction Size: S q u a re 2 3 0 m ils I W afer Size: 4" " V RRM C l 3 S S : 1 2 0 0 H Passivation Process: G la s s iv a te d M O A T ■ Reference IR Packaged Part: 4 0 E P S S e rie s

Contextual Info: Preliminary Data Sheet No. PD60200 IR2304 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • VOFFSET IO+/- min VOUT Delay Matching Internal deadtime ton/off (typ.) to +600V. Tolerant to negative transient voltage

Contextual Info: Data Sheet No. PD60209 revC IR2308 S & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

Contextual Info: Data Sheet No. PD60200 revB IR2304 S & (PbF) HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • • to +600V. Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

Contextual Info: Data Sheet No. PD60207 Rev.A IR2302 S & (PbF) HALF-BRIDGE DRIVER Packages Features • Floating channel designed for bootstrap operation • • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

Contextual Info: Bulletin I0134J 05/99 IR230DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 9AF Series Major Ratings and Characteristics Parameters

IR230LM06CS02CB

Abstract: 40EPF
Contextual Info: Bulletin I0126J 08/97 IR230LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPF Series Major Ratings and Characteristics Parameters Units 1080 mV

IR2301

Abstract: IR2301S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MS-012AA
Contextual Info: Data Sheet No. PD60201 Rev.D IR2301 S & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 5 to 20V

40EPS

Abstract: IR230DM12CCB WAFER International Rectifier
Contextual Info: Bulletin I0121J rev. A 02/97 IR230DM12CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters

IR2304

Abstract: MS-012AA PD60200-A
Contextual Info: Data Sheet No. PD60200-A IR2304 S HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • VOFFSET IO+/- (min) VOUT Delay Matching Internal deadtime ton/off (typ.) to +600V. Tolerant to negative transient voltage

IR230SG

Contextual Info: Bulletin I0205J 07/98 IR230SG.HCB SERIES PHASE CONTROL THYRISTORS Junction Size: Square 230 mils Wafer Size: 4" V RRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: n. a. Major Ratings and Characteristics Parameters

IR235

Abstract: transformer design spec lin transformer" spec lin transformer HT16S01B HT16S02 HT16S03A HT16S04 HT16S05 HT16S06
Contextual Info: Single 10/100Base-T Transformer Design for varied turn ratio on TX side SPEC LIN ◆ Designed to meet IEEE802.4u requirement. ◆ Primary inductance 350 H min with 8mA DC Bias ◆ Designed to meet IR235℃ peak requirement. Electrical Characteristic @25℃