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    IR PHOTODIODE ARRAY INGAAS Search Results

    IR PHOTODIODE ARRAY INGAAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    1SS352
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.1 A, USC, AEC-Q101 Datasheet
    TBAS16
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    1SS307E
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.1 A, ESC, AEC-Q101 Datasheet
    BAV99
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet
    1SS302A
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.1 A, USM, AEC-Q101 Datasheet

    IR PHOTODIODE ARRAY INGAAS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.


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    g12430g12430-016dg12430-032dg12430-046d+440-pin48-pin18-pinkird1124e01 PDF

    Contextual Info: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.


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    g12430g12430-016dg12430-032dg12430-046d+440-pin48-pin18-pinkird1124e02 PDF

    InGaAs PIN photodiode Long Wavelength 2.6

    Abstract: ir photodiode array ingaas
    Contextual Info: InGaAs PIN Photodiodes Near IR detectors with low noise and superior frequency response • Standard types Standard types cover a spectral response from 0.9 to 1.7 |im, and available with 7 active areas ranging from 0.08 mm to 5.0 mm in diam­ eter. Applications include optical communications, power meter, near


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    256-elementingaas pin photodiode long wavelength 2.6ir photodiode array ingaas PDF

    IR photodiode array

    Contextual Info: InGaAs PIN Photodiodes Near IR detectors with low noise and superior frequency response • Standard types S tan d ard types co ver a spectral resp onse from 0 .9 to 1.7 pirn, and available with 7 active areas ranging from 0 .0 8 mm to 5 .0 mm in diam ­ eter. Applications include optical com m unications, power m eter, near


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    ir photodiode array PDF

    1C12

    Abstract: 1300nm TPA photodiode photo diode array InGaAs TPA-1C12 PIN 1300nm
    Contextual Info: TPA-1C12 InGaAs PIN photodiode Array FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Surface reflectivity 2 Responsivity uniformity Dark Current


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    tpa-1c121300nm1e-101e-11+71e-121e-13250x2501c12tpa photodiodephoto diode array ingaaspin 1300nm PDF

    InGaAs PIN photodiode Long Wavelength 2.6

    Abstract: THOMSON-CSF PRODUCTS ir photodiode array ingaas QS 7779 BP 40 Diagramm R T Thomson-CSF diodes
    Contextual Info: TH7426A/27A NEAR INFRARED InGaAs LINEAR IMAGE SENSOR 300 PIXELS DESCRIPTION These devices are based on a 300 InGaAs photodiode linear array, with a 26µm pitch, using an in line pixel layout or a staggered pixel layout. Two 150:1 CCD multiplexor chips, offering memory and delayed readout capability, are hybridized on both sides of the


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    th7426a/27ath74ka26a/th74ka27ath74kb26a/th74kb27adsth7426a/27at/0398+6ingaas pin photodiode long wavelength 2.6thomson-csf productsir photodiode array ingaasqs 7779bp 40 diagramm r tthomson-csf diodes PDF

    THOMSON-CSF linear array CCD

    Abstract: silicon vidicon BP 40 Diagramm R T
    Contextual Info: TH7422B NEAR INFRARED InGaAs LINEAR SENSOR 300 PIXELS DESCRIPTION This device is based on a 300 InGaAs photodiode linear array, with a 26µm pitch, using an in line pixel layout. Two 150:1 CCD multiplexors chips, offering memory and delayed readout capability, are hybridized on both sides of


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    th7422b74ka22b74kb22bthomson-csf linear array ccd+2silicon vidiconbp 40 diagramm r t PDF

    Light Detector laser

    Abstract: short distance measurement ir infrared diode
    Contextual Info: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that


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    koth0001e15light detector lasershort distance measurement ir infrared diode PDF

    near IR photodiodes

    Abstract: S8745-01 S8558
    Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


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    kspd0001e09near ir photodiodess8745-01s8558 PDF

    Contextual Info: MITSUBISHI LASER DIODES □□16244 7T4 PD7XX9 SERIES N°"c' . i i *1 S o n * P « 'a InGaAs PIN PHOTO DIODES TYPE NAME DESCRIPTION FEATURES P D 7 X X 9 series are InGaAs photodiode array which # has # <t> 4 0 u m active diam eter # 2 5 0 u m spacing betw een sensitive area


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    1300nm PDF

    InGaAs Epitaxx linear

    Abstract: D000G1 EPITAXX silicon photodiode array linear array photodiode element photodiode 256 elements silicon
    Contextual Info: EP I T A X X INC 3 3 b 0 4 Qb OO OO CH ? 54E D EPITAXX M ETX30 & 100MLA 64,128 & 256 T M I-s s InGaAs Multiplexed Linear Photodiode Arrays Description: EPITAXX ETX 30MLA 64,128 and 256 and ETX 100MLA 64 and 128 are linear arrays of 64,128 and 256 elements. The pixel cross-section of the ETX 30 MLA is 30x30 microns;


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    33b04qb100mla30mla30x30+9100x3005x025025x05ingaas epitaxx lineard000g1epitaxxsilicon photodiode arraylinear array photodiode elementphotodiode 256 elements silicon PDF

    650nm 5mw laser

    Abstract: ird300 laser range finder schematics 500mW 808nm infrared laser diode driver circuit 650nm laser diode 200mw circuit diagram of radar range finder LD-808-500G t15f-xyz-wm LD-808-1000G LD-650-5A
    Contextual Info: VCSEL, Green, Red & Infrared Laser Modules & Optical Transceivers by Lasermate VCSELs | Communication Lasers | Photodiode Receivers | Fiber Optical Transceivers | Book Store | On Sale Items | Green, Red, & Infrared Laser Diode Modules | Laser Diodes | Laser Accessories | Laser Products | Electroluminescent Products |


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    1550nm650nm 5mw laserird300laser range finder schematics+7500mw 808nm infrared laser diode driver circuit650nm laser diode 200mwcircuit diagram of radar range finderld-808-500gt15f-xyz-wmld-808-1000gld-650-5a PDF

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


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    rlu4116erlt390-50cmgrlt395-50cmgrlt400-50cmg+14th06-1watu61938489at1212at3112smd diode uj 64 asld3237vfr20/spl1550-10-9-pdsld3237vfsmd diode um 08smd diode umrlcd-m66h-750rlt905-30gsld3236vfrlt6650gli PDF

    uv phototransistor

    Abstract: CLD240E CLD271 CLD240 LED NIGHT LAMP CIRCUIT CLL133 cll135 CLD340 CL9P5L CLL136
    Contextual Info: Clairex OPTOELECTRONIC Technologies, Inc. PACKAGING & PRODUCTS 1301 East Plano Parkway Plano, Texas 75074-8524 PH: 972-265-4900 FAX: 972-265-4949 www.clairex.com CLAIREX TODAY Clairex Technologies, incorporated in Texas in 1994, has grown to become an internationally recognized leader in


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    390nm465nm525nm660nm+11850nmuv phototransistorcld240ecld271cld240led night lamp circuitcll133cll135cld340cl9p5lcll136 PDF

    C9750

    Abstract: C10990 S11059-78HT S11154-01CT S10604
    Contextual Info: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS


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    c10988mac10627d-82211de128228814+5c9750c10990s11059-78hts11154-01cts10604 PDF

    Sensors PSD

    Contextual Info: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches


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    16-elementc9004kaccc0426ebsensors psd PDF

    ic 555 use with metal detector

    Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
    Contextual Info: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.


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    ic 555 use with metal detectordvd optical pick-up assemblycd laser pickup assemblybolometer detector+1light detector laser PDF

    APD InGaAs array

    Abstract: Photodiodes Pyroelectric Detectors Image Sensors Photodiode apd amplifier VISIBLE Photodiode Array Detectors INSB PHOTODIODE Avalanche cmos detector H4741
    Contextual Info: Selection Guide Types and Applications of Hamamatsu Opto-semiconductors. 2, 3 Si Photodiodes S1226, S1227 Series UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for Precision Photometry) .4


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    s1226s1227s1336s1337+14s2386s2387c2719c6386h4741h3651apd ingaas arrayphotodiodespyroelectric detectorsimage sensorsphotodiode apd amplifier visiblephotodiode array detectorsinsb photodiodeavalanche cmos detector PDF

    LDR sensor light dark sensor

    Abstract: dark light sensor using LDR AND transistor sensor LDR ldr sensor uv light PHOTO detector FillFactory Photoresistor uv pyro sensor InGaAs apd photodiode CCD and CID Technology
    Contextual Info: Silicon versus Film CMOS versus CCD Units of sensitivity Color sensitivity B. Dierickx - FillFactory • • • • Photonics West 2000 Short Course Methods of scanning Methods of light detection in Silicon / CMOS Floor plan of a CMOS image sensor Basic CMOS pixels


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    ldr sensor light dark sensordark light sensor using ldr and transistorsensor ldrldr sensor+6uv light photo detectorfillfactoryphotoresistor uvpyro sensoringaas apd photodiodeccd and cid technology PDF

    laser range finder schematics

    Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
    Contextual Info: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series


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    laser range finder schematicsbpw34 application notelaser range finder254 nm uv led+6spot-9dmiapplication note bpw34far uv photodiodeudt sensorsbpx65pin-10ap PDF

    C10500

    Abstract: linear CCD 512 TDI cmos image sensor
    Contextual Info: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide


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    kapd0002e12c10500linear ccd 512tdi cmos image sensor PDF

    Laser Diode 808 2 pin 1000 mw

    Abstract: 808 nm 1000 mw laser diode CW laser diode 808 nm tunable lasers diode applications LD-808-500C-C LASER DISTANCE METER 808 nm 1000 mw Laser-Diode 808 Laser Diode 808 nm Laser Diode LD Catalog
    Contextual Info: TUNABLE LASER DIODES High-Power Laser Diodes Fiber Pigtailed HHL TO-3 LASER DIODES Key Features • Longer laser diode lifetime due to aluminum free device structures* • Visible, near IR and infrared laser diodes with center wavelengths of 670, 808, 980 and 1930 nm


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    laser diode 808 2 pin 1000 mw808 nm 1000 mw laser diodecw laser diode 808 nmtunable lasers diode applications+6ld-808-500c-claser distance meter808 nm 1000 mwlaser-diode 808laser diode 808 nmlaser diode ld catalog PDF

    R6094 pmt divider circuit

    Abstract: Hamamatsu r6094 C9321CA-02 R4110U-74 AUTOMATIC STREET LIGHT CONTROLLER using IR sensor InGaas PIN photodiode chip back illuminated apd raman wafer 60g H9656 sensor x-ray
    Contextual Info: New CCD for Low-Light Scientific Applications High-Speed InGaAs APD + TIA ROSA Highly Sensitive Image Intensifier with Large Active Area Flat-Panel Sensor Product Line Extended The Improved Macro Imaging System AEQUORIA Imaging-Based Plate Reader FDSS for HighThroughput


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    31-novr6094 pmt divider circuithamamatsu r6094c9321ca-02+7r4110u-74automatic street light controller using ir sensoringaas pin photodiode chip back illuminatedapd ramanwafer 60gh9656sensor x-ray PDF

    Image sensors

    Abstract: ccd sensors
    Contextual Info: Image sensors 1 CCD image sensors 1-1 1-2 1-3 1-4 Structure and operating principle Characteristics How to use New approaches CHAPTER 05 6 Photodiode arrays with amplifiers 6-1 6-2 6-3 6-4 6-5 Features Structure Operating principle Characteristics How to use


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    14-bitimage sensorsccd sensors PDF