IR P025 Search Results

Contextual Info: IRFP450 N - CHANNEL 500V - 0.33Í2 - 14A - TO-247 PowerMESH MOSFET TYPE IR F P 4 5 0 V R d s s 500 V d Id S o ii < 0.4 Q. 14 A • TYPICAL RDS(on) = 0.33 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED

50n04

Abstract: 50N04A
Contextual Info: r z 7 Ä T# S G S R - T H O M S O N Î L i M ! 0 gS V N W 50N04A ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp R D S (o n 11i m VN W 50N 04A 42 V 0.0 12 Î2 50 A . LINEAR CURRENT LIMITATION . THERMAL SHUT DOWN . SH O R TC IR C U IT PROTECTION

transistor f151

Abstract: tms 374 biss 0001 je 243 JE 33 p626 PSX128B PSX96B I-CUBE 51P124
Contextual Info: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used

Contextual Info: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used

2N7002DM

Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
Contextual Info: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)

sot62

Abstract: BUW14
Contextual Info: N AUER PHILIPS/DISCRETE bTE T> m bbSBTBl 0 C]E05b 3 =530 • APX P hilips S em roduct sp e cifica tio n Silicon diffused power transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in

MOR56

Abstract: mot schematic M0P41 compal m0r11 AM251S EL 817 c321 SS145 SS97 ss129
Contextual Info: Model Name: N20U PCB No: LA542 Revision: 1A Model Name: N20U2 PCB No: LA542 Revision:3A N20U BLOCK DIA GRAM CPU DECOUPING PULL UP/FDOW N GEYSERVILLE Coppermine Geyserville uBGA2/uPGA2 CPU CLOCK ICS9248-92 PAGE 11 PAGES PAGE 3,4 LCD & CRT PC I/ISA PULL UP/DOWN

transistor P397

Abstract: transistor P479 P449 p331 TRANSISTOR transistor k38 v6 transistor P519 am2 am3 p055 power transistor f AJ38 w38 transistor
Contextual Info: MSX532 Matrix Switch Preliminary Data Sheet Features Description • • The MSX family of SRAM-based bit-oriented switching devices offers flow-through NRZ datarates of 300Mbps and registered clock frequencies of 200MHz. The 532 I/O Buffers IOBs are individually configured. The IOBs can be connected

Contextual Info: CMPWR025 CALIFORNIA MICRO DEVICES 500mA DUAL INPUT SmartOR™ POWER SWITCH Features • Automatically selects VCC1 OR VCC2 input source • Integrated switches 0.2Ω typ deliver 500mA output • Operating supply range from 2.8V to 5.5V • Glitch-free output during supply switching transitions

12f s091

Abstract: T1B10 pdcr 900 "XS 101" ocr6 tlcs90 8e s085 eeprom s130 RC1B S091
Contextual Info: TO SH IBA UNDER DEVELOPMENT TMP95CW86/TMP95FW86 CMOS 16-Bit Microcontroller TMP95CW86F / TMP95FW86F TMP95CW86DF / TMP95FW86DF 1. Outline and Features The TMP95CW86 and TMP95FW86 are high-speed, high-perform ance 16-bit microcontrollers developed for medium- to large-scale control applications.

SP0256-AL2

Abstract: SPO256 SPR016 gg2j Radio Shack spr016 sp0256al2 tandy spr016 SP0256 sound phase checker SPO-256
Contextual Info: r a ï b a c k D oc. # 17517 Catalog Number 276-1784 TECHNICAL DATA AN EXCLUSIVE RADIO SHACK SERVICE TO THE EXPERIMENTER SP0256 NARRATO R SPEECH PROCESSOR Features Tim • • * • * * • RÔM D VDD C 7 S&Y c 6 DS^C 9 w c ■0 A7 c I Stfl OUT c 12 AÔC l ì

1P137

Abstract: transistor 1p137 HRC 2J 225 HRC 2J 225 ratings p055 TRANSISTOR DATASHEET P06368 P058l P057C Z1P041 P124l
Contextual Info: "É sSs«t ! * I-C u b e PSX Family Data Sheet F eatures D e s c r ip t io n • SRAM-based, in-system programmable The PSX160, PSX128B and PSX96B are SRAM-based bus • Switch Matrix oriented switches with 160, 128 and 96 l/Os respectively. The devices are manufactured using a 0.6|jm CMOS process and

Contextual Info: VB927 VB927FI HIGH VOLTAGE IGNITION COIL DRIVER POWER 1C . . . . NO EXTERNAL COMPONENT REQUIRED INTEGRATED HIGH VOLTAGE CLAMP COIL CURRENT LIMIT INTERNALLY SET HIGH RUGGEDNESS DESCRIPTION The VB927 is a monolithic high voltage integrated circuit made using STM VIPower Technology,

YBs transistor

Abstract: BUK437-400B
Contextual Info: PHILIPS INTERNATIONAL bSE D O 7110fl5b DDbBTlb 5^b « P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

AP-211

Abstract: CMPWR025 CMPWR025S P025 4802V
Contextual Info: A CALIFORNIA MICRO DEVICES CMPWR025 ► ► ► ► ► 500mA DUAL INPUT SmartOR POWER SWITCH Pin Diagram Features • • • • • • • A utom atically selects VCC1 OR VCC2 in p u t source Integrated switches 0.2Q typ deliver 500m A o u tp u t

P521 G

Abstract: P452 p477 p520 p508 p364 p372 p421 data sheet P439 IR P116
Contextual Info: MSX532 Matrix Switch Preliminary Data Sheet Features • SRAM-based, in-system programmable • 532 Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output

VNH100N04

Contextual Info: VNH100N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE V clamp R DS on I lim VNH100N04 42 V 0.012 Ω 100 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN

VNH100N04

Contextual Info: VNH100N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE V clamp R DS on I lim VNH100N04 42 V 0.012 Ω 100 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN

VNH100N04

Contextual Info: VNH100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE V clamp R DS on I lim VNH100N04 42 V 0.012 Ω 100 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN

vnh70n07

Contextual Info: VNH70N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH70N07 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS on I lim 70 V 0.015 Ω 70 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN

VNH50N04

Contextual Info: VNH50N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH50N04 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS on I lim 40 V 0.012 Ω 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN

vnh70n07

Contextual Info: VNH70N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH70N07 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS on I lim 70 V 0.015 Ω 70 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN

VNH50N04

Contextual Info: VNH50N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH50N04 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V clamp R DS on I lim 40 V 0.012 Ω 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN

VNW50N04 equivalent

Abstract: SGS-Thomson mosfet
Contextual Info: f= T SGS-THOMSON ^ T # MDeBSilLiCT^OÖÜlOei VNW50N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNW50N04 . . . • . ■ . . . . Vclamp RDS on him 42 V 0.012 Q 50 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP