IR DIODES Search Results

Contextual Info: BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs λ = 950 nm and GaAlAs (λ = 870 nm) IR

Contextual Info: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .

Contextual Info: BPV21F L Vishay Semiconductors Silicon PIN Photodiode Description BPV21F(L) is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters (λ p = 950 nm).

Contextual Info: 800 Axial Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot IR (µA) Tstg (°C) VF (V) max IF (A) IR (H) (µA) t rr VR = VRM VR = VRM Ta (°C) max max 2 t rr 1 (µs) : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

BPV10NF

Contextual Info: BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links

Contextual Info: 1000 Axial Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot Tj (°C) IR (H) (µA) IR (µA) Tstg (°C) VF (V) max IF (A) t rr VR = VRM VR = VRM Ta (°C) max max 2 t rr 1 (µs) : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

SMALL SIGNAL SCHOTTKY DIODES DO-35

Abstract: ultra low drop, high current diode 1N60P DO-35 silicon Rectifier diodes HALF WAVE RECTIFIER CIRCUITS high speed
Contextual Info: DC COMPONENTS CO., LTD. 1N60P RECTIFIER SPECIALISTS R TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES FEATURES * Metal silicon junction, majority carrier conduction. * High current capability, low forward voltage drop. * * * * * Extremely low reverse current IR

AG01Z

Abstract: AL01Z EG01Z EL02Z EN01Z FML-G12S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

fmp2fu

Abstract: FMP-3FU FMV3GU FMP-3FU DATASHEET FMQ-2FUR damper diodes 3gu diode
Contextual Info: VRM V Division IFSM (A) I F (AV) (A) Part Number 50Hz (Diode modulation Type) Tj (°C) Tstg (°C) Half-cycle Sinewave Single Shot 1500 600 FMV-3FU 5.0 FMV-3GU 5.0 FMP-2FUR 5.0 50 IR (µA) IR (H) (mA) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: DIGITRON SEMICONDUCTORS FJT1100, FJT1101 ULTRA LOW LEAKAGE DIODES IR = 1.0 pA max @ 5V (FJT1100) BV = 20 V (min) (FJT1101) MAXIMUM RATINGS Characteristics Value Storage temperature range -55° to +200°C Maximum junction operating temperature +175°C Lead temperature

FMl 125

Abstract: AG01Z AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62 SFPX-62
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

fmgg2c

Abstract: FMGG26S fml-g16s g13s FMl 125 FMG-13S FMG-23S FMG-33S FMG-G26 FML-23S
Contextual Info: Package I F AV (A) Part Number IFSM (A) 50Hz Tj (°C) IR (H) (mA) t rr VF (V) max IF V = V V = V Ta R RM R RM (A) (°C) max max Half-cycle Sinewave Single Shot Surface Mount SFPX-63 IR (µA) Tstg (°C) 1 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

FML-G12S

Abstract: fml-g16s AG01Z AL01Z EG01Z EN01Z MP2-202S MPL-102S SFPL-52 SFPL-62
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC4153 Voltage-to-Frequency Converter Features Applications • 0.1 Hz to 250 kHz dynamic range • 0.01% F.S. maximum nonlinearity error— 0.1Hz to 10 kHz • 50 ppm/°C maximum gain temperature coefficient

RB080L-30

Abstract: Rohm Schottky Barrier Diodes
Contextual Info: RB080L-30 | Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. 1 Schottky Barrier Diodes RB080L-30 [ Product description ] Outline ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics.

RB160VA-40

Contextual Info: Schottky Barrier Diodes RB160VA-40 Dimensions Unit : mm Applications General rectification  Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 3) High reliability. 2.5±0.2 Features 1) Small mold type. (TUMD2) 2) Low VF, Low IR.

TSTS710

Contextual Info: TSTS710. Tem ic Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed T O -IS pack­ age. Their glass lenses provide a very high radiant

1SMA4761 R2

Abstract: K13 diode
Contextual Info: 1SMA4737 thru 1SMA200Z Taiwan Semiconductor CREAT BY ART Surface Mount Silicon Zener Diodes FEATURES - Built-in strain relief - Ideal for automated placement - Glass passivated junction - Low inductance - Typical IR less than 1uA above 11V - Moisture sensitivity level : level 1, per J-STD-020

SMA UF4007

Abstract: DO41 package D1FL20U D1FL40 Invac BA157 BA158 BA159 DO201AD DO41
Contextual Info: SEMICONDUCTORS DIODES, Rectifier FAST RECOVERY 1 Amp fast recovery, through hole rectifiers. DO41 1 Amp VRRM V Manufacturer: Invac Device & 400 Order Code IFAV (A) at Tamb (°C) IFSM (A) Package: DO41 VF (V) at IF (A) IR (µA) at VRRM 150 BA157 600 BA158

Contextual Info: TSMF1000/1020/1030/1040 Vishay Telefunken High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology molded in clear SMD package with dome lens. DH chip technology represents best performance for

1SS379

Abstract: 0-110A
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SS379 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small total capacitance: CT=3.0pF Typ. 1 0.55 Low reverse current: IR=0.1nA(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 Low forward voltage :VF=1.0V(Typ.)

Marking s3

Abstract: smd transistor s3 1SS388
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS388 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low Forward Voltage :VF 3 = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.1 1.6-0.1 +0.05 0.1-0.02

Contextual Info: SG2000 SERIES SILICON GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS LINEAR IN T E G R A T E D C IR C U IT S DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in

RB160M-90

Contextual Info: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm zDimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) Low IR