IR 9433 Search Results

Contextual Info: litem:i INFRARED REMOTE CONTROL RECEIVER MODULES LTM-9433 SERIES TOP VIEWING FEATURES • EASY T O HANDLE SMALL TY P E MODULE • EXC ELLENT M ECH A N IC ALLY S TR E N G TH AND ELECTRICAL STABILITY . CAN BE INSTALLED D IR E CTLY TO E Q U IP M E N T • R E C EIVE IN FR A R ED M O D U LATED PULSES

HF10D120ACE

Contextual Info: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • •

HF20D120ACE

Contextual Info: PD - 94331B HF20D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

IRF1010

Abstract: IRFB13N50A
Contextual Info: PD - 94339 IRFB13N50A SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) max ID 0.450 Ω 14A 500V Benefits l Low Gate Charge Qg results in Simple Drive Requirement

Alternator regulator

Abstract: AN-994 IRF3808L IRF3808S 94338 IRF380
Contextual Info: PD - 94338A IRF3808S IRF3808L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

Contextual Info: PD - 94338A IRF3808S IRF3808L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

Contextual Info: PD - 94334B IRHF57133SE JANSR2N7497T2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/706 5 TECHNOLOGY ™ Product Summary Part Number IRHF57133SE Radiation Level RDS(on) ID 100K Rads (Si) 0.1Ω 10.5A QPL Part Number JANSR2N7497T2

IRHF57133SE

Abstract: JANSR2N7497T2
Contextual Info: PD - 94334B IRHF57133SE JANSR2N7497T2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/706 5 TECHNOLOGY ™ Product Summary Part Number IRHF57133SE Radiation Level RDS(on) ID 100K Rads (Si) 0.1Ω 10.5A International Rectifier’s R5TM technology provides

typical diode

Abstract: hexfred gen3 HF20D120ACE
Contextual Info: PD - 94331 HF20D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance

Contextual Info: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • •

hexfred gen3

Abstract: typical diode gen3 HF20D120ACE CR diode transient
Contextual Info: PD - 94331A HF20D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V I F nom =8A VF(typ)= 1.85V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •

HF10D120ACE

Contextual Info: PD - 94330 HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • •

Contextual Info: PD - 94331B HF20D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

Contextual Info: WITH DIMPLE IN CONTACT AREA Cod.94334-X004 WITHOUT DIMPLE IN CONTACT AREA Cod.94334-X014 — 6.83 *0-25 — — I 4,3 >025 -R1.33 R0.62 _ J Q I— 0.80 COPLANARITY TO BE 0.10 MAX [FROM SETTING PLANE 5.22*025 RECOMMENDED PCB LAY-OUT AND PART POSITIONING ONTO THE PCB

AN-994

Abstract: IRF3808L IRF3808S
Contextual Info: PD - 94338A IRF3808S IRF3808L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

Contextual Info: PD - 94338 IRF3808S IRF3808L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

Contextual Info: PD -94335 IRF1407S IRF1407L Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Advanced HEXFET Power MOSFETs from International

IRF7NA2907

Contextual Info: PD - 94337B HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94337B HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94337A HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRF5800

Abstract: IRF5804 IRF5850 SI3443DV
Contextual Info: PD - 94333 IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

marking code 82A

Abstract: AN-994 IRF3808L IRF3808S marking 106V
Contextual Info: PD - 94338A IRF3808S IRF3808L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

IRF5820

Abstract: IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d
Contextual Info: PD - 94333A IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

IRF5820

Abstract: 94333 IRF5800 IRF5804 SI3443DV k 9632 sot-23 MARKING CODE 3d
Contextual Info: PD - 94333B IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from