IR 749 Search Results

54S38

Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
Contextual Info: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S

Contextual Info: S C IE N T IF IC / n iN I- C IR C U IT S IR E t very low distortion • B O b a sil OCmiS1!? 357 Frequency Mixers LEVEL 17S Models ■ SC C T-74-09-01 RMS-5H LRMS-5H +17 dBm LO, up to +14 dBm RF computer-automated perform ance data typical production unit

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

irf 405

Abstract: 749621-7 750113-1
Contextual Info: 10-18-00 3:17pa D R AW IN G M A DE IN T H IR D ANOLE P R O J E C T ION PIN / PIN 68 34 UPPER BACKSHELL LOWER BACK5HELL From: BMP FAX PIN 1 U IR t C O LO R PIN 35 CHARI A DATE CODE AND MANUFACTURING LOCATION MARKED ON CABLE. 2. CABLE STAPLE HEIGHT TO BE .405.

A9081

Contextual Info: RETENTION BULB 90814-*!* / BULBS CONFIGURATIONS 908l4-*4* USED IN 12-26 T E R M IN A L BULB W ITH C IR C U IT OPTIONS CK T 90814 - * ONLY I C IR C U IT R E T E N T IO N NO S IZ E R E T E N T IO N 8 BULBS PCB TUBE PEGS PACKED TAPE & REEL PA C KED P O L A R IZ IN G

LG color tv Circuit Diagram schematics

Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243
Contextual Info: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS

NF 841

Abstract: 22202
Contextual Info: Chip Capacitors Preliminary data Solderability Reflow soldering IR and vapor phase Construction ● Stacked-film technology ● Uncoated Delivery mode Blister tape in accordance with IEC 286-3, reel packing Features ● Excellent self-healing properties

SOD-123 marking code 24

Abstract: zener sot23 marking MARKING CODE DO-214AC BZV55C4V3 1N5988B 1N6006B BZV55C6V2 BZV55C12 1N5994B BZV55C15
Contextual Info: TM Micro Commercial Components ZENER DIODES MCC Part Number Maximum Zener Impedance ‘B’ Suffix Only Maximum Reverse Leakage Current IR @ VR Max. Zener Voltage Temp Coefficient ‘B’ Suffix Only Nominal Zener Voltage Vz @ Izt Test Current IZT Volts mA

do-214ac footprint

Abstract: 749B Zener 762b 748B 744B 745B zener diode on 822 1SMA4741 1SMA4742 1SMA4743
Contextual Info: WTE POWER SEMICONDUCTORS 1SMA4741 – 1SMA4764 1.0W SURFACE MOUNT ZENER DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! 1.0W Power Dissipation B 11 – 100V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance A Typical IR Less Than 5.0µA Above 11V

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base

Contextual Info: 1SMA4737 thru 1SMA200Z Taiwan Semiconductor CREAT BY ART Surface Mount Silicon Zener Diodes FEATURES - Built-in strain relief - Ideal for automated placement - Glass passivated junction - Low inductance - Typical IR less than 1uA above 11V - Moisture sensitivity level : level 1, per J-STD-020

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base

749196241

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base

1SMA4761 R2

Abstract: K13 diode
Contextual Info: 1SMA4737 thru 1SMA200Z Taiwan Semiconductor CREAT BY ART Surface Mount Silicon Zener Diodes FEATURES - Built-in strain relief - Ideal for automated placement - Glass passivated junction - Low inductance - Typical IR less than 1uA above 11V - Moisture sensitivity level : level 1, per J-STD-020

39 do-214ac

Abstract: 743b diode 749B Zener 761-B 748b DIODE
Contextual Info: SENSITRON SEMICONDUCTOR 1SMA4741–1SMA4764 1.0W SURFACE MOUNT ZENER DIODE Data Sheet 2677, Rev. B Features
 Glass Passivated Die Construction 1.0W Power Dissipation 11 –100V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance Typical IR Less Than 5.0µA Above 11V

1SMA200Z

Abstract: 1SMA4741 1SMA4742 1SMA4743 1SMA4744 ZENER DIODE SMA
Contextual Info: 1SMA4741 - 1SMA200Z 1.0 Watts Surface Mount Silicon Zener Diode SMA/DO-214AC Features For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0uA above 11V

zener color codes

Abstract: zener diodes color coded colour code diode zener 1SMA4737 743A ZENER SINGLE COLOR CODE 7.5V zener diode DEVICE MARKING CODE 150A marking c08 sma zener
Contextual Info: 1SMA4737 - 1SMA200Z 1.25 Watts Surface Mount Silicon Zener Diode SMA/DO-214AC Features For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0uA above 7.5V

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance base 10 kHz/ 1 V Rated Current base ΔT = 40K Saturation Current base |ΔL/L| < 10% DC Resistance base @ 20°C Voltage-µSecond base Lbase IR base

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir