IR 529 MOSFET Search Results

Contextual Info: IRF7342QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS = -55V RDS on = 0.105Ω

Contextual Info: PD- 96128B END OF LIFE IRF7478QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS on max (mW) ID 26@VGS = 10V

Contextual Info: END OF LIFE PD - 96112B IRF7413QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free 1 8 S 2 7 D S 3 6 D G 4 5 D Description

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

DG528CK

Contextual Info: SILICONIX INC 33E ]> • S2SII735 OülbSbS 7 « S I X DG528/529 m S gS b 8-Channel and Dual t s i - iz 4-Channel Latchable Multiplexers FEATURES TTL Compatible 44 V Power Supply On-Board Address Latches Low rDs ON (270 n typ.) Break-Before-Make Improved ESD Protection > 2500 V

Contextual Info: IRF7307QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to

Contextual Info: END OF LIFE PD – 96114C IRF7805QPbF Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free l l l l l l l Description IRF7805QPbF 8 S 2 7 D S 3 6 D G 4 5 D T o p V ie w

DG528CJ

Abstract: 70068 DG529BK SAB 529
Contextual Info: DG528/529 Vishay Siliconix Latchable Single 8-Ch/Differential 4-Ch Analog Multiplexers FEATURES BENEFITS APPLICATIONS • Low rDS on : 270 Q • 44-V Power Supply Rating • • Data Acquisition Systems • Microporcessor Bus Compatible • Automatic Test Equipment

dg528bk

Contextual Info: DG528/529 8-Channel and Dual 4-Channel Latchable Multiplexers BENEFITS FEATURES TTL Compatible 44 V Power Supply On-Board Address Latches Low rDS 0 N (270 n Typ.) Break-Before-Make Improved ESD Protection > 2500 V JOT52& APPLICATIONS Easily Interfaced Increased Analog Signal Range

Contextual Info: Advanced SSP5N90A Power MOSFET FEATURES B V DSS - Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = 2 . 9 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V B Low Rds(0n) ■ 2.300 £1 (Typ.)

Contextual Info: Advanced IRFS140A Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V

Contextual Info: 19-3519: Rev 0:3/91 B-Channel Latchable M ultiplexers G eneral Description Features ♦ Low-Power, Monolithic CMOS Design The DG 528/D G529 have break-before-m ake sw itching to prevent m om entary shorting of the input signals. Each device operates with dual supplies ±4.5V to ±20V or a

Contextual Info: Advanced SSW/I5N90A Power MOSFET FEATURES BV dss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = 5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V

Contextual Info: Advanced SSH5N90A Power MOSFET FEATURES B V DSS - • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 2 .9 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V B Low Rds(0n) ■ 2.300 £1 (Typ.)

Contextual Info: PD - 96284 IRF7815PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 150V 43m @VGS = 10V 25nC 1 8 S 2 7 S 3

IRFD9014

Abstract: IR 529 MOSFET irfd9014 i diode 5J 7A
Contextual Info: PD-9.696A International S Rectifier IRFD9014 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching V dss - -60V F*DS on = 0.50Í2

Contextual Info: END OF LIFE PD - 96105B IRF7306QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2

4801 MOSFET

Abstract: IR 529 MOSFET TC 9151 P wiper motor 12v dc ST72334J4 dpak mosfet motor control DC 12v LDP24A relay 4130 globe DC motors D 4515
Contextual Info: Complete Standard Solutions for Automotive DC-Motor Control TD340 H-Bridge Driver Application example: Smart Wiper System With ST’s TD340, wiper systems are not only simpler and more reliable, but they can have more functionality, too. A complete smart wiper solution, which features current monitoring and active

Contextual Info: PD - 96102B END OF LIFE IRF7105QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1

f12n10l

Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
Contextual Info: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits

IRFS140A

Contextual Info: Advanced IRFS140A P o w e r MOSFET FEATURES b v D SS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea ^ D S o n = ID

ur4120

Abstract: RURD4120S9A TA49036 RURD4120 RURD4120S
Contextual Info: RURD4120, RURD4120S S E M I C O N D U C T O R 4A, 1200V Ultrafast Diodes April 1995 Features Packages • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . <70ns JEDEC STYLE TO-251 ANODE o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C

SMBJ5A

Abstract: irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET 220ac to 5v ac inverter CIRCUIT DIAGRAM ST2310HI circuit diagram adsl modem board hp laser printer 600v TL431 928
Contextual Info: Computer Discretes & Standard ICs Selection Guide MOTHERBOARDS AND CONNECTING PORTS Video Port Arc-ing Protection DALC Parallel Port Termination ST1284 Audio Op-Amp Serial Port RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage

14MQ

Abstract: IC-441 IR 529 MOSFET
Contextual Info: General Description Features The MIC4416 and MIC4417 IttyBitty low-side MOSFET drivers are designed to switch an N-channel enhancementtype MOSFET from a TTL-compatible control signal in lowside switch applications. The MIC4416 is noninverting and the MIC4417 is inverting. These drivers feature short delays