IR 444 H Search Results

MIL-PRF-19500-444

Abstract: JANTX, JX, JAN, Schottky 1n5711 equivalent 1N5711-1 DSB5712 DSB2810 1N5711 1N5712 1N5712-1 1N6857-1
Contextual Info: • 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 JANTX, JANTXV AND JANS

Contextual Info: OSSfll SSMA hUrmtfcally S«tl*d M staH b-M ttal Harmatic Saal Jaok Racaptaela W ith EMI/RF 1 Qaakrt H 3 — FWd I 3otd*r irid Bna-ln VSWR(QW: 1X17+ 0111 RF LMtaw (dB): -(100•18Hz) ^ -m m n v ir b m m s m • n v bo b h n a H o io t w — k»M i—«—IL-nr

Contextual Info: m o le x Mini-Fit Family Mini-Fit, HCS™ Header FEATURES AND SPECIFICATIONS Features and Benefits Electrical • Carries 3 more amperes per circuit than 5566 series headers ■ Headers available with mounting pegs for increased board retention ■ Positive housing locks

IR 427B

Abstract: allen torque
Contextual Info: TÈmmsêBeUs NEMA Terminal Blocks Ultra Heavy Duty D e s c r ip t io n / A p p l ic a t io n This Ultra Heavy Duty line includes two series. The 400 series is rated up to 270 A; the 444 series is rated up to 400 SERIES ULTRA HEAVY DUTY 455 A. D e s ig n A

1n5711 equivalent

Abstract: microsemi 1n5712 1N5711 from microsemi 1N6858-1 DSB2810 DSB5712 1N5711 1N5711-1 1N5712-1 1N6857-1
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01844 1-800-446-1158 / 978 794-1666 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ZENER DIODE, 500mW – LEADLESS PACKAGE FOR SURFACE MOUNT – LOW REVERSE LEAKAGE CHARACTERISTICS – METALLURGICALLY BONDED

FPT102

Abstract: FPT720
Contextual Info: 1-15 Photodiodes BV lR - 5.0 iiA, H < 0.1 IIW/cm» Min Typ vn V R Tungsten R Q 0.9 ii Responïivtty. Respontivity •r ■l T (jA/mW/cm1 iiA/mW/cm' V „« -1 0 V V „ = -1 0 V H £ 0.1 MW/cm> H —20 mW/em* Tc = 2854K No bias, GaAs Typ Max Min Typ Min Typ

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. LEDI PDLARITY PIN 13 PIN 14 CDLDR + DRANGE + GREEN - - RoHS 2002/95/EC

IC P605 8 pin

Contextual Info: Whn% H EW LETT mLfiM PACKARD Subminiature LED Lamps Technical Data HLMP-PXXX Series HLMP-QXXX Series HLMP-6XXX Series HLMP-70XX Series Features Dome Packages The HLMP-6XXX Series dome lamps for use as indicators use a tinted, diffused lens to provide a wide viewing angle with a

TCM5023ALU

Abstract: transistor b 1624
Contextual Info: TCM5023ALU CMOS Area Image Sensor TCM5023ALU 1/7 Inch 110 k Pixel CMOS Color Image Sensor The TCM5023ALU is a CMOS color image sensor that meets with CIF format. It enables all pixel signals to be output in sequence each 1/30 s. progressive scanning This element is equipped with 290 vertical and 367 horizontal

TCM5023ALU

Contextual Info: TCM5023ALU CMOS Area Image Sensor TCM5023ALU 1/7 Inch 110 k Pixel CMOS Color Image Sensor The TCM5023ALU is a CMOS color image sensor that meets with CIF format. It enables all pixel signals to be output in sequence each 1/30 s. progressive scanning This element is equipped with 290 vertical and 367 horizontal

Contextual Info: SD-55055-00I.S0I o © I Lu L D LD £ © . LD LD I lQ ;it a tE NOTES: I. US MATERIAL C lIM - : L C P s 44 ’ H -1 U L9 4 V -0 WAFER : LCP , UL94V-0 PIN : COPPER ALLOY FITTING NAIL : COPPER ALLOY ( t =0. 2) ( t =0. 1 5 ) 4w34±S PLATING PIN: Au OVER HALF-BRIGHT Ni PLATING

Contextual Info: S E H I T R O N . INDUSTRIES LTD M3E D • S i a ? » 1 000018t, è B S L C B T-<B-n IN3889-IN3893 SERIES Fast Recovery Rectifier 12 Amp Silicon Diode FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current .45") 11.5 max

p605

Contextual Info: That mLUM HP AECWKLAERTDT Subm iniature LED Lamps Technical Data HLMP-PXXX Series HLMP-QXXX Series HLMP-6XXX Series HLMP-70XX Series Features • Subminiature Flat Top Package Ideal for Backlighting and Light Piping Applications • Subminiature Dome Package

UPD444

Abstract: UPD444-1 MPD444
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION T h e /LfPD444 is a high-speed, lo w p o w e r s ilic o n gate C M OS 4 0 9 6 b it s ta tic R A M o rg a ­ n ize d 1 02 4 w o rd s b y 4 b its . I t uses DC stable s ta tic c ir c u itr y th ro u g h o u t and th e re ­

Contextual Info: 013700=5 GGDGSÜ7 1 • SLCB 43E D SEMITRON INDUSTRIES LTD 03 High Voltage Rectifiers Operating/Storage Temperature Range -65°C to + 150 C Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV Io @Ta VpK mA °C

MV1204

Abstract: 1204-05B
Contextual Info: Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ ■ VHF to UHF & L Band Operation Low Series Resistance Octave Tuning from 4 to 20 volts Surface Mountable S O T-23 Package - Single diode S M V 1204-04A , S M V 1204-05A - Two diodes back to back

Contextual Info: SEMITRON INDUSTRIES LT» 43E ]> fil37flâcî 000020b T • S L C B - T - Z RECTIFIERS Bridge Rectifiers Operating/Storage Temperature Range -55°C to +150CC Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV

high power fast recovery diodes

Abstract: MU diode MARKING CODE
Contextual Info: ON Semiconductort Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 ON Semiconductor Preferred Devices These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low

BAV54-30

Abstract: 1N4148F BAV54-70 35P4 BAV54 1n4152f 4148f BAY68 BAV54-100 BAW 43
Contextual Info: Silicon signal diodes * High speed switching Diodes de signa! au silicium Type - Case V B oitier V *0 Im A) v(Vp) / / max max max r V rm T a m b 2 5 °C Commutation rapide ' «F (m A ) IR ,/ V r ( n A ) / (V ) 'R / v R <mA ) / (V ) C t rr if D R S 75 tp F)

IR 30 D1

Abstract: BAX17 FDH444 1N625 1N626 1N627 1N628 1N629 1N658 1N659
Contextual Info: NATL SEMICOND DISCRETE H E D | High Voltage Diodes Glass Package D evice No. P ackage No. Vrrm V Min 1N625 DO-35 30 1N626 DO-35 50 1N627 DO-35 100 1N628 DO-35 150 1N629 DO-35 200 1N658 DO-35 120 1N659 DO-35 60 1N660 DO-35 120 1N661 DO-35 240 Ir nA Max 1000

382533-9

Abstract: 382533-2
Contextual Info: 7 8 DRAWING MADE T H IS IN DRAWING T H IR D IS ANGLE 6 5 P R O JE C T IO N U N P U B L ISH E D . COPYRIGHT 19 RELEASED BY AMP FOR 3 4 2 LOC PU B LIC A T IO N INCORPORATED. DIST AG 53 ALL INTERNATIONAL RIGHTS RESERVED. 1 R E V ISIO N S ZONE D E S C R IP T IO N

heds 6300

Contextual Info: HEWL E TT -P A CK AR D / CMPNTS hlE T> m MM47SÔ4 O D D Ü B I S S 3 ? H H P A HEW LETT PACKARD T'- Technical Data HLMP-PXXX Sériés HLMP-Q1XX Sériés HLMP-6XXX Sériés HLMP-70XX Sériés Features Dome Packages The HLMP-6XXX Series dome lamps for use as indicators use a

Contextual Info: Bulletin 127099 rev. A 10/97 International IÖ R Rectifier IRK.F200. SERIES MAGN-A-pak Power Modules FAST THYRISTOR/DIODEand THYRISTOR/THYRISTOR Features Fast tu rn -o ff th yristo r Fast recovery diode High surge capability E lectrically isolated baseplate

Contextual Info: SEMITRON INDUSTRIES LTD H3E D • fliaTflftR 000015R S B S L C B BZY9IIZ6 S E R I E S Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F081 ■Voltage Range 3V6 to 200 Volts 75 Watt Steady State ■ 5000 Watt Peak Power APPLICATIONS