IR 2153 APPLICATION Search Results

Contextual Info: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating

CPH3106

Abstract: CPH6701 TA-1524 marking PA
Contextual Info: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky

CPH3106

Abstract: CPH6701 EN6007
Contextual Info: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2153 Reflective Photosensor U nit : mm Mark for indicating LED side • Outline O N 2153 is a p h o to se n so r d etectin g the chan g e o f re fle ctiv e light a in w hich a high efficiency G aA s infrared light em itting diode is used

Reflective photosensor

Abstract: ON2153
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2153 Reflective Photosensor • Outline U nit : mm M a rk f o r in d ic a tin g L E D s id e 7.5±0.2 O N 2153 is a p h o to se n so r detecting the change o f re fle ctiv e light cn in w hich a high efficiency G aA s infrared light em itting diode is used

marking PA

Abstract: CPH3106 CPH6701 "marking PA"
Contextual Info: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.

NPN DARLINGTON POWER module isotop

Abstract: JIS h 3140 pin diagram of ic 1496 schematic diagram UPS ESMT5070DF ESMT5070DV smps&ups
Contextual Info: 3QE D H 7^2153? D 03040^1 ESMT5070DF ESMT5070DV SGS-THOMSON M S G NPN THREE STAGE DARLINGTON POWER MODULE S-THOMSON ADVANCE DATA • HIGH C U R R E N T PO W ER BIPOLAR MODULE ■ VE R Y LOW Rm JUNC TIO N CASE ■ SP ECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FR EEW HEELING DIODE

irg7ph42upbf

Abstract: marking code 5339
Contextual Info: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

IRG7PH42U-EP

Abstract: 124 transistor
Contextual Info: PD - 96233 IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

IRG7PH42UPBF

Abstract: IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U
Contextual Info: PD - 96233A IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

equivalent of transistor tt 2148

Abstract: equivalent of transistor tt 2146 equivalent for transistor tt 2146 transistor TT 2146 TT 2146 M4 A4 TPC1280 TT 2146 M4 D3 TRANSISTOR TT 2158 TT 2146 M4 G4 str z 2154
Contextual Info: TPC12 SERIES CMOS FIELD-PROGRAMMABLE GATE ARRAYS SRFS002C - D3963, DECEMBER 1991 - REVISED FEBRUARY 1993 • Three Arrays With Increased Densities • Up to 8000 Equivalent Gate Array Gates • • Supported by Tl Action Logic System TI-ALS Software •

2LINE

Abstract: NS180 TMPZ84COOP diode+cc+3053 rectifier+bridge+cc+3053
Contextual Info: TOSHIBA JT6B03-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC JT6B03-AS DOT MATRIX LCD CONTROLLER AND DRIVER LSI The JT6B03-AS is a dot matrix LCD controller that realizes low power and high speed using CMOS silicon gate technology. This driver can drive a dot matrix LCD under 4-bit or 8-bit MPU control, and

Contextual Info: a 67C401/13, 67C402/23 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 4,64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS RAM-based architecture for short fall-through delay • Zero standby power ■ High-speed 15 MHz shift-ln/shift-out rates

67C402

Abstract: IR 2153 67C401-10
Contextual Info: 67C401/13, 67C402/23 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 4, 64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS RAM-based architecture for short fall-through delay • Zero standby power ■ High-speed 15 MHz shift-in/shlfi-out rates

67c401

Abstract: 67C4023 67C402 67C4023-15 67C402-10 67C401-10 67C4013 67C4023-10
Contextual Info: a 67C401/13, 67C402/23 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 4, 64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ RAM-based architecture for short fall-through delay Full CMOS cell for maximum noise Immunity

AD821

Contextual Info: ANALOG DEVICES □ FEATURES True Single Supply Operation: Input and Output Voltage Ranges Include Ground Output Voltage Swing to 50mV of Each Rail Low Power: 400|xA Supply Current max 2S0|tV Input Offset Voltage 1.3MHz Gain Bandwidth Product 3V/|xs Slew Rate

magnetic read switch circuit

Abstract: VTC PLCC
Contextual Info: vCtvTcmc. Value the Customer VM 327R 10-CHANNEL, CENTER-TAPPED FERRITE, THIN-FILM AND MIG HEAD, READ/WRITE PREAMPLIFIER , 1993 s i i l i / H2XC H2Y 4 3 2 ilS 1 2 8 2 7 26 O S 25 □ R/W C 6 24

SOLAR INVERTER 1000 watts circuit diagram

Contextual Info: Solar Circuit Protection Application Guide Complete and reliable solar circuit protection Introduction Benefits of Eaton’s Circuit Protection Solutions Complete and Reliable Circuit Protection for Photovoltaic PV Balance of System Eaton offers the industry’s most complete and reliable

BLH DHF

Abstract: BLH Pressure Transducer specifications BLH Pressure Transducer specifications D-HF CI 74C00 LT1012 LT1013 LT1024 LT1024ACN LT1024AM LT1024CN
Contextual Info: LT1024 Dual, Matched Picoampere, Microvolt Input, Low Noise Op Amp F€ATUR€S D C SC R IPTIO O • Guaranteed Offset Voltage 50/tV Max. ■ Guaranteed Bias Current 25°C 120pA Max. —55°Cto 125°C 700pA Max. 1.5jtV/°CM ax. ■ Guaranteed Drift ■ Low Noise, 0.1Hzto10Hz

Contextual Info: RF Preliminary MICRO-DEVICES R F2 152 DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3 V POWER AM PLIFIER Typ ical A p plications • Spread Spectrum Systems • 3V JCDMA/TACS Cellular Handsets • CDPD Portable Data Cards • 3V TDMA/AMPS Cellular Handsets • Portable Battery-Powered Equipment

85C22V10

Abstract: 85c22v10-15 P85C22V10-10 22VP10 85C22V10-10 D85C22V10 P85C22V
Contextual Info: 85C22V10 HIGH PERFORMANCE 10-MACROCELL CMOS PLD • High-Speed Upgrade to Bipolar 22V10/22VP10 and CMOS Equivalents ■ Global Asynchronous Clear and Synchronous Preset P-terms ■ High Performance, LSI Semi-Custom Logic Alternative to Low-End Gate Arrays, TTL, 74HC SSI and MSI Logic,

power supply using IR2153

Abstract: ir2153 application IR2153 ir2153 shutdown SCR TL431 Specification IR21531 application half bridge circuit using IR2153 IR2153 APPLICATION cross-conduction IR2153D circuit diagram ir2153 hard switching protection
Contextual Info: Back DESIGN TIP International Rectifier DT 98-4 • 233 Kansas Street El Segundo CA 90245 USA Technical Overview of IR215x Products By John Parry Introduction IR215x devices are widely used in high volume off-line, cost sensitive areas such as Electronic Ballasts,

power supply using IR2153

Abstract: ir2153 application ir2153 hard switching protection ir2153 shutdown IR2153 half bridge circuit using IR2153 IR21531 application IR2153 APPLICATION cross-conduction IR215X ballast Self-Oscillating
Contextual Info: DESIGN TIP International Rectifier DT 98-4 • 233 Kansas Street El Segundo CA 90245 USA Technical Overview of IR215x Products By John Parry Introduction IR215x devices are widely used in high volume off-line, cost sensitive areas such as Electronic Ballasts,

Contextual Info: HiCH » F J r P W M r 'A 'i A l f l G H iTi.-RA-HK-PC-j r5 EL400C 200 MHz Current Feedback Am plifier F e a tu r e s G e n e ra l D e sc r ip tio n • 200 MHz —3 dB bandwidth, Ay = 2 • 12 ns settling to 0.05% • Vs = ± 5V @ 15 mA • Low distortion: HD2, HD3 @