IR 2153 APPLICATION Search Results

Contextual Info: DCM Series is discontinued. 13 1 Fast-Acting ⁄ 3 2 ˝ x 1 ⁄ 2 ˝ 10x38mm Midget Fuses, For supplemental, control circuit applications, see KLM Series, data sheet # 2020 1 For photovoltaic 600Vac/dc, ⁄10–30A applications, see PVM Series, data sheet # 2153

21531S

Abstract: ir 2153 application 2104S 2101S 2153S IR 2153 IR53HD420-P2 2184S 2113s 2109-4
Contextual Info: International Rectifier Lighting IC Navigator Functi on Features Voltage Offset Hi gh Si de B a si c 600 B a si c 600 Independant Hi gh & Low S i de Half-Bri dge 8 Lead D IP 14 Lead D IP 14 Lead D IP w/o Lead 4 16 Lead D IP w/o Leads 4 & 5 IR 2117 FD IR 2118(FD )

5n06

Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06
Contextual Info: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, SEFP5N05 SEFP5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field

sgs Thomson Thyristor

Abstract: ICC3-400 thyristor capacitive discharge ignition use ic in capacitor discharge ignition IGNITION THOMSON ICC03-400B2 antiparallel scr 7270 ic capacitive discharge ignition capacitor discharge ignition
Contextual Info: £ = T S G S -T H O M S O N ^ 7 # RfflDOMmLKgTTliOlD ! Application Specific Discretes A.S.D. ICC03-400B2 IGNITION CO NTRO L C IR C U IT FEATURES AND BENEFITS • MONOLITHIC CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL ■ DEDICATED THYRISTOR STRUCTURE FOR

Contextual Info: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating

C3248

Abstract: LR7189 122122
Contextual Info: DRAM INS MADE IN THIRD AN9LE PROJECTION T H IS DRAWING IS U N PU BLISH ED . COPYRIGHT 19 R ELEA SED FOR PU BLIC A T IO N OV AMP INCORPORATED. A LL INTERNATIONAL LOC , 19 RIG H TS RESERVED . D I ST R E V IS IO N S 14 LTR ZONE DATE D ESC RIPTIO N REV/REDRWN / 0720-0228-92

BLB-4215B-YG

Abstract: 94-22VGC
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET MODEL NO DATE ：BLB-4215B-YG ：2000/12/1 DEPARTMENT：R&D CENTER REVISION ：1.0 RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : DEA-880-001 PAGE :3 CUSTOMER DESIGNER REV CHECKER

8630-01

Abstract: IR 2153 CCFL backlight 96-22VGC BLB-4938J-YG 863001 UDT model 2153 9622vgc
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. LED BACKLIGHT MODEL NO:BLB-4938J-YG Device Number:DEA-863-001 Page:1/4 ECN: •Features: ●High Performance ●Free Design ●Longer Life and Low Power Consumption ●Various Color :Blue,Green,Yellow Green Standard ,Orange,Amber,Red

CPH3106

Abstract: CPH6701 TA-1524 marking PA
Contextual Info: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky

CPH3106

Abstract: CPH6701 EN6007
Contextual Info: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Package Dimensions unit:mm 2153 0.15 2.9 5 4 0.6 6 0.2 [CPH6701] 2.8 0.05 2 3 0.95 0.7 0.9 1 0.2 0.6 • Composite type with a PNP transistor and a Schottky

c 879 transistor

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET MODEL NO DATE ：BLB-10721I-YG ：2001/2/5 DEPARTMENT：R&D CENTER REVISION ：1.0 RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : DEA-879-001 PAGE :3 CUSTOMER REV DESIGNER CHECKER

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2153 Reflective Photosensor U nit : mm Mark for indicating LED side • Outline O N 2153 is a p h o to se n so r d etectin g the chan g e o f re fle ctiv e light a in w hich a high efficiency G aA s infrared light em itting diode is used

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET MODEL NO DATE ：BLB-7153G-YG ：2000/7/25 DEPARTMENT：R&D CENTER REVISION ：1.1 RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : DEA-816-001 PAGE :4 CUSTOMER 1.0 REV DESIGNER CHECKER

Reflective photosensor

Abstract: ON2153
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2153 Reflective Photosensor • Outline U nit : mm M a rk f o r in d ic a tin g L E D s id e 7.5±0.2 O N 2153 is a p h o to se n so r detecting the change o f re fle ctiv e light cn in w hich a high efficiency G aA s infrared light em itting diode is used

fbt symbol

Abstract: fbt tv samsung fbt sound ic samsung tv circuit diagram Sicma KA2103H television external parts ka2103 5 pin voltage comparator IC
Contextual Info: 1984.ll.2i> 7 L I N E A R INTEGRATED C IR CU IT KA2103H MUTE SYSTEM FOR TV 9 Sip T h e K A 2 1 0 3 H is a m o n o l i t h i c i n t e g r a t e d c i r c u i t d e s i g n e d -for n o is e s o u n d m u t i n g in t e l e v i s i o n receiver, . T h i s IC has all f u n c t i o n s i n c l u d i n g h o r i z o n t a l

marking PA

Abstract: CPH3106 CPH6701 "marking PA"
Contextual Info: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.

Contextual Info: MITSUBISHI Nch POWER MOSFET FS50UMH-06 î I HIGH-SPEED SWITCHING USE FS50UMH-06 • 2.5V DRIVE • VDSS .60V • rD S O N (M A X ) . 2 1 m O

str - z 2154

Abstract: sk 5130
Contextual Info: Precision Operational Amplifier Features Applications • • • • • • • • • • • High Gain Instrumentation Precision Data Acquisition Precision Integrators Biomedical Amplifiers Precision Threshold Detectors D escription The Harris HA-5130/5135 are precision operational

IrDA Infra Red Integrated Circuits

Abstract: Manchester Products manufacturer 20401 Prairie sigmatel mobile phone parts ACTISYS bayer SIGMATEL IrDA Dow Chemical Company Regal Electronics
Contextual Info: VISHAY Vishay Semiconductors Sources for Accessories IrDA Related References Obex Code Infrared Data Association ObexCode provides superior quality IrDA software, like our Embedded IrDA Stack and our middleware products Proxima Server and Beam2Phone. The technological competence spans from protocol stacks

NPN DARLINGTON POWER module isotop

Abstract: JIS h 3140 pin diagram of ic 1496 schematic diagram UPS ESMT5070DF ESMT5070DV smps&ups
Contextual Info: 3QE D H 7^2153? D 03040^1 ESMT5070DF ESMT5070DV SGS-THOMSON M S G NPN THREE STAGE DARLINGTON POWER MODULE S-THOMSON ADVANCE DATA • HIGH C U R R E N T PO W ER BIPOLAR MODULE ■ VE R Y LOW Rm JUNC TIO N CASE ■ SP ECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FR EEW HEELING DIODE

D913

Abstract: UNELCO MICA CAPACITORS VK200
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F150 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

irg7ph42upbf

Abstract: marking code 5339
Contextual Info: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

IRG7PH42U-EP

Abstract: 124 transistor
Contextual Info: PD - 96233 IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

IRG7PH42UPBF

Abstract: IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U
Contextual Info: PD - 96233A IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient