IR 10D Search Results

Contextual Info: IMAGE REJECT MIXERS LO Frequency MHz +10 dBm (1) RF Frequency (MHz) -10dBm 810-830 (2) Power (dBm) nom. Conversion Loss (dB) max. 1 dB Comp. Pt. (dBm) min. Image Rejection (dBc) min. LO + IF +10 9.0 +3 25 IR-01-F 865-900 LO ± IF +10 9.0 +3 25 IR-02-F 935-960

transistor 6cw

Abstract: 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier
Contextual Info: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS f IR H 7450 IR H 8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45ft, MEGA RAD HARD HEXFET international Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

Contextual Info: r e i r o ir c ir Product Specifications July 1995 1 of 4 CAS2403 2.4 to 2.5 GHz Power Amplifier-T/R Switch Features □ +20 dBm Output Power □ Power Control □ PCMCIA Compatible Functional Block Diagram 8 - 6 5 4 3 2 1 - R F -e Applications □ Wireless LANs

MAD1103P

Abstract: MAD1108P MAD130P MOTOROLA MAD1103P
Contextual Info: MAD130P* MAD1103P* MAD1107P* MAD1108P* MAXIMUM RATINGS fa125°C Fre e -A ir Tem pe ra tu re u n le ss o th e rw ise noted. Rating Peak Reverse V o lta g e d ) Stead y-S tate Re ve rse V olta g e Peak Fo rw a rd C urre n t at lo r b elow ) 25°C Free-A ir

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: M ir “ O n N I 256K DRAM MODULE X 36, 512K X MT10D25636 18 DRAM MODULE 256K x 36, 512K x 18 FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS M T 10D25636M /G Itmmrrrm^ „ iïrmrrmrrrri^ ^ MARKING • Timing 60ns access 70ns access 80ns access -

UT41656

Contextual Info: DATA SHEET UM MODEL NO.: SPECIFICATIONS REV. UT41656 MODEM COUPLING TRANSFORMERS B2 Features 00/22 Applications •Surface mount •Low distortion 7mm seated height IEC 950 Reinforced Isolation Withstands 23050C IR Reflow EN60950 certified Telecommunications

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

TEA1060

Abstract: A1094 DIP28 PCA1070 S028 TEA106X TEA1094 TEA1094T
Contextual Info: IN TEG R A TED C IR C U ITS Product specification File under Integrated Circuits, IC03 August 1994 Philips Semiconductors PHILIPS PHILIPS 711002b 0076337 EÛT This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors Product specification

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

TO8c

Contextual Info: — -rJ'k ^onuonn 2/99 ‘ COMPONENTS / Ir AC281 AC282 10 TO 250 M H z TO-8 C ASC AD AB LE A M P LIFIER S Typical Values Low Noise Figure. High Gain. High Output L evel.

Contextual Info: •I 4 0 5 5 4 5 2 O O l b l b l 7T2 ■ INR Other Products From IR Rectifiers Ultra-Fast Recovery INTERNATIONAL RECTIFIER, 1 to 25 Amps * 100F1 10DF2 100F4 100F6 100F8 100 200 400 600 800 iFSMm •HhJC ’f(* v ) « (0 Hz DC CO on (A) (°C/W) (M) 25 25

MCE 2000

Contextual Info: SURFACE MOUNT PIN DIODE ATTENUATOR MODEL PI-810 150-2000 MHz FEATURES: • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ir Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

rpg10

Abstract: RPG10M RGP10M RGP10A RGP10A-RGP10M
Contextual Info: RGP10A - RGP10M Features • 1.0 min 25.4 1.0 ampere operation at TA = 55°C with no thermal runaway. Dimensions in inches (mm) • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA.

rpg10

Abstract: RPG10M
Contextual Info: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.

Contextual Info: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.

rpg10

Abstract: RPG10A RPG10M RGP10A RGP10A-RGP10M RGP10M
Contextual Info: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.

RPG10A

Abstract: rpg10 RGP10A RGP10A-RGP10M RGP10M RPG10M
Contextual Info: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.

88613

Abstract: GBPC610 J-STD-002B GBPC6005 gbpc601
Contextual Info: GBPC6005 thru GBPC610 VISHAY Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics IF AV 6A VRRM 50 V to 1000 V IFSM 175 A IR 5 µA VF 1.0 V Tj max. 150 °C Case Style GBPC6 ~ ~ ~ ~ Features Mechanical Data

10D-11

Contextual Info: tfûPulse •S Electronics nnnn Electrical @ 25°C PARAMETER TURNS RATIO SPECIFICATIONS ISOLATION RESISTANCE IR AT 500 VDC 10G OHM MIN. DC RESISTANCE 0.2 OHMS MAX INDUCTANCE (0CL) ( DATE CODE d d d d 68 uH MIN (MEASURED AT 100 KHz, 20 mVRMs) BETWEEN CHANNEL

LAN83C180

Abstract: TX100 ADAPTIVE equalizer SCRAMBLE
Contextual Info: LANÔ3C180 s ir ic PRELIMINARY e STANDARD MICROSYSTEMS CORPORATION 10/100 FAST ETHERNET PHY TRANSCEIVER FEATURES Integrated 10/100 Mb/s Ethernet PHY in a Single Chip Solution Full Mil Interface for a Glueless MAC Connection Half Duplex and Full Duplex in Both

TCRT5000

Abstract: d1202 transistor TCRT5000L transistor d1202 D1202 Telefunken Phototransistor Opto-Sensor reflective Opto-Sensor tcrt5000 footprint
Contextual Info: TCRT5000 L Reflective Optosensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.

DOT30B

Abstract: BYg 25 D0214AC
Contextual Info: Tem ic S em iconductors Rectifiers Electrical Characteristics lg a tîjl> 25°C 150°C fe a t V8S*!t V'• A ' at Ip A jtA fiA 30 1 i o 2 ! V A li 1 at ip, US A 4 0.5 Ir A a&dig A Package 0.25 D 0214A C Standard Rectifiers in D0214AC I BYG 10D 200 1.5 BYGIOG

FBU4K

Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406
Contextual Info: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL