IR 106 Search Results

KSD303

Abstract: 3A40 SDB30A40 KSD-3034-000 ksd+150+full+safe
Contextual Info: SDB30A40 Semiconductor Schottky Barrier Diode Features • Switching type power supply application • Converter & Chopper Application • Low IR IR=10uA Typ Ordering Information Type No. SDB30A40 Marking Package Code 3A40 SOD-106 Outline Dimensions unit :

D207

Abstract: 838 ir ir 838 7105 st 439 TSSOP8 Package
Contextual Info: IRF7701 TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: 310 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: + 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-IR-Lumineszenzdioden, hergestellt im Schmelzepitaxieverfahren • Gute Linearität /e = /[/p ] bei hohen Strömen • Sehr hoher Wirkungsgrad

S1226-44BK

Abstract: S1226-18BK
Contextual Info: Si photodiodes S1226 series For UV to visible, precision photometry; suppressed near IR sensitivity Features Applications High UV sensitivity: QE=75 % λ=200 nm Analytical equipment Suppressed near IR sensitivity Optical measurement equipment, etc. Low dark current

Q62703Q0071

Abstract: OHRD1938
Contextual Info: GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays Lead Pb Free Product - RoHS Compliant LD 260 LD 262 … LD 269 Wesentliche Merkmale Features • GaAs-IR-Lumineszenzdiode • Zeilenbauform, lieferbar von 2 bis 10 Emitter pro Zeile • Farbe: transparent

BPX osram

Abstract: GEOY6021 OHRD1938 Q62703-Q395 Q62703-Q67
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode

OHRD1938

Abstract: BPX osram GEOY6021 Q62703-Q395 Q62703-Q67 LD261-1
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode

BPX osram

Abstract: GEOY6367 OHRD1938 Q62703-Q70 Q62703-Q71 Q62703-Q72
Contextual Info: GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 262 … LD 264 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 80-Serie Miniatur-Gehäuse

BPX osram

Abstract: Q62703-Q72 GEOY6367 OHRD1938 Q62703-Q70 Q62703-Q71
Contextual Info: GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 262 … LD 264 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 80-Serie Miniatur-Gehäuse

TSL267

Abstract: TSL2671
Contextual Info: TSL267 HIGHĆSENSITIVITY IR LIGHTĆTOĆVOLTAGE CONVERTER t t TAOS033 – OCTOBER 2001 D Integral Visible Light Cutoff Filter D Converts IR Light Intensity to Output D D D PACKAGE FRONT VIEW Voltage Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and

Contextual Info: TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER r r TAOS033A − JUNE 2005 D Integral Visible Light Cutoff Filter D Converts IR Light Intensity to Output D D D PACKAGE S SIDELOOKER FRONT VIEW Voltage Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and

rc5 protocol

Abstract: philips RC5 protocol RC5x philips AN2957 philips RC5 RC5 IR RC5 Infrared STM8L10x RC5 transmitter STM8L
Contextual Info: AN2957 Application note Implementing an RC5 infrared transmitter using the IR timer modulator of the STM8L10x microcontroller Introduction IR infrared light is a popular means of wireless communication for remote control applications. Many different protocol standards such as RC5, RC5x, RC6,… exist for

Contextual Info: TSL267 HIGH-SENSITIVITY IR LIGHT-TO-VOLTAGE CONVERTER r r TAOS033B − AUGUST 2005 D Integral Visible Light Cutoff Filter D Converts IR Light Intensity to Output D D D PACKAGE S SIDELOOKER FRONT VIEW Voltage Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and

C1815

Abstract: C270 SOD-64
Contextual Info: Temic Semiconductors SOD64 Zener- and Suppressor Diodes continued Electrical Characteristics TKvZatlz hi and Tighter Tolerance Available on Request. Ir at VK2) Vz Ir arVjt V(CL)R ” atiRSM V Q dam ping Standoff a Part Number Min Max iyp Max. %nt mA . HA

12IR125

Abstract: Lucent 12IR125 12IR125LP Lucent 12IR125LP 12IR125 Batteries 914EX 12IR-125 lucent battery Northern Technologies 914EX LUCENT ECS
Contextual Info: IR Series II Batteries 12IR125LP 12 V, 120 Ah Battery 12IR125 (12 V, 120 Ah) Battery Designed to withstand the rigors of harsh environments and uncontrolled temperatures, the valve-regulated lead acid IR Series II battery is a cost-effective solution for medium-load battery applications.

D207

Abstract: ir2131 ir led ir led datasheet ir 838
Contextual Info: IR2131 44 Lead PLCC w/o 12 leads 01-3004 02 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200

30u60

Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Contextual Info: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600

K987

Abstract: IC 555 Internal block diagram *426bf
Contextual Info: Te m ic U426B Semiconductors Infrared Driver Description The U 426B is an IR-<3river IC fo r IR data com m unication. T he circuit contains a program m able constant current source DRV to drive the IRED . T he current is pro­ gram m ed b y an external resistor (R§). W ith the internal

Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC4153 Voltage-to-Frequency Converter Features Applications • 0.1 Hz to 250 kHz dynamic range • 0.01% F.S. maximum nonlinearity error— 0.1Hz to 10 kHz • 50 ppm/°C maximum gain temperature coefficient

Contextual Info: 10: 10-23-00 12:31pm troni: AHF tAX b iD DRAWING HADE fN TH IR D AMGLE P R O JE C T IO N THIS DRAWING 15 U N P U 6 H » < E O . p. 5 of 31 From: AHP FAX ! To: bib 10-23-00 12:31pm [_ IR E L E A S E D FOR D IS T PUBLICATION R E V IS IO N S

Photodiodes

Abstract: yag Electrical circuit S11499 TO-8 Package
Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

foto sensor

Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor

Contextual Info: DO NOT SCALE DIMENSIONS B fl -Ty ir' y 11 3E ii- ^ METRI C IN mm T H IR D A N G LE P R O J E C T IO N A ft 0 E$ IXI— k\ \ \ \T ALTERNATE FORM xxxx x-£ Z Z 9 0 t-x A •9, 6* B ■49, 9-21,9- - 4x2,0-8,0^ 12, 25- S E C T I O N A-A S E C T I O N B-B 1,7 -21,9A.

Contextual Info: Si photodiodes S2386 series For visible to near IR, general-purpose photometry Features Applications High sensitivity in visible to near infrared range Analytical instruments Low dark current Optical measurement equipment High reliability Superior linearity