IR 006 Search Results

Contextual Info: International IO R Rectifier Prelim inary Data Sheet No. PD-6.107-G IR 2 1 3 3 / IR 2 1 3 5 IR 2 2 3 3 / IR 2 2 3 5 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage

APD 1550 nm

Abstract: datasheet apd 1550 fall time jds uniphase laser transmitter 1550 nm 1550 nm dfb laser source, jdsu datasheet apd 1550, sensitivity 30 dBm, 10 Gb/s laser diode lifetime GR-253 GR-253-CORE STM16 transceiver DFB APD 155
Contextual Info: COMMUNICATIONS MODULES & SUBSYSTEMS OC-48 SFP Transceiver Multirate, 1310 nm, and 1550 nm CT2 Series Key Features • SFP MSA compatible • Fully OC-48 SONET compliant at all reaches: SR, IR-1, IR-2, LR-1, and LR-2 • Microprocessor-based design fully implements the

Contextual Info: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching

Contextual Info: 13 12 .02 5 10 ;q 004 TYP CKTS 0 .6 4 S E E NOTE N O T E 8 .118±.004 02 " 3.0 0 ± 0 .1 0 NON-ACCUM. 04 06 C IR C U IT 08 1 10 12 14 TYP (S E E NO TE 16 41± 0.05 ' 8) TY R SEE NOTE 6 18 20 22 24 CIRCUIT T C IR C U IT C IR C U IT 1 IDENTIFIED ON THIS SURFACE

Contextual Info: P D -9 .1 5 3 3 International IQ R Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET Ultra Low O n-Resistance P-Channel Surface M ount IR FR 5410 Straight Lead (IR FU 5410) A dvanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -1 0 0 V

Contextual Info: PD - 91302C International IQ R Rectifier IR F R /U 4 1 0 5 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IR FR 4105 Straight Lead (IRFU 4105) Fast Switching Fully Avalanche Rated V dss = 55V RüS(on) = 0.045Î2 Description

Contextual Info: P D - 9.1253 biternational [Ml Rectifier IRFR2605 IRFU2605 HEXFET Power MOSFET • • • • • • • Ultra Low O n-R esistance ESD P rotected S urface M ount IR FR 2605 S traight Lead (IR FU 2605) 150°C O perating Tem perature R epetitive A valanche Rated

Contextual Info: TE CONNECTIVITY IR O1 ECR 12 006062 30MAR12 PS RRP 8 1437012 9 7 1437012 5 6 1437012 1 1437013 9 D CONNECTOR METALSHELL SOCKET CONTACT IDC TYPE O1

Diode LT 228

Contextual Info: PD - 9.1365A International IQ R Rectifier IR F R /U 1 2 0 N PRELIMINARY HEXFET Power MOSFET S u rfa c e M o u n t IR F R 1 2 0 N S tra ig h t Lead (IR F U 1 2 0 N ) A d v a n c e d P ro ce ss T e c h n o lo g y F ast S w itch in g F ully A v a la n c h e R ated

Contextual Info: |p j"0f n Q t ÌO n Q I Preliminary Data Sheet No. PD601631 X Q R R e c tifie r IR 2 1 0 9 /IR 2 1 0 9 4 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage

Contextual Info: P A IR C H II-D S E M I C O N D U C T O R w w w .fa ir c h ild s e m ¡ . c o m tm RC5231 CPU Voltage Regulator for Mobile PC’s Features Description • Synchronous rectification • High precision The RC5231 is a high efficiency and high precision DC/DC

uPC662

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED C IR C U IT B E C IR O N DEVICE u 3 CHANNEL D/A CONVERTER FOR VIDEO PROCESSING DESCRIPTION PC662 is a video 8-bit 3-channel digital analog converter having the following features: High speed and high precision bipolar processing technology for excellent performance of 35 MHz, ±0.5 LSB M AX. ; three channels of identical digital

74LS194AN

Contextual Info: + April 1998 F A IR C H IL D S E M IC O N D U C T O R -s ] I" I“ CO W t en DM74LS194A 4-Bit Bidirectional Universal Shift Register General Description This bidirectional shift register is designed to incorporate v ir­ tually all o f the features a system designer m ay w ant in a

OD-800F

Abstract: OD-800L OD-800W od800w
Contextual Info: HI-REL RAD HARD IR EMITTERS OD-800W FEATURES 1.00 MIN. ANODE CASE GLASS .006 HIGH MAX .015 • Designed for high radiation tolerance .209 .212 • Excellent power degradation characteristics • High power output • Fast response .183 .152 .187 .156 .100

MIL-W-22759

Contextual Info: CATALOG MICRO SWITCH FREEPORT I LL I NO I S . U S A 6 HM 4 SWITCH - BA SIC A DI VI S I ON O F H O N E Y W E L L LISTING F E D . M F G . C O D E »192» WOBBLEFRAM ACTUATOR SE A L 3 NO. 22 W IR E LEAD PER MIL-W-22759 /I2 MARKED WITH C IRC U IT IDENT AND W IR E GAGE

c1175 transistor

Abstract: HF Colpitts VCO 790 MHz Saw Filter
Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC6508 Q A M IF D o w n c o n v e r t e r Features Integrated IF Down Converter IF bandwidth from 30 MHz to 80 MHz Operating range between 8.5V to 13.2V 63dB peak conversion gain from IF to baseband

Contextual Info: Filter Type Solder Mount EMI Filter Datasheet SFSSC Discoidal Capacitors with Leads Circuit Configuration Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR) Temperature Rating Ferrite Inductance (Typical)

A9081

Contextual Info: RETENTION BULB 90814-*!* / BULBS CONFIGURATIONS 908l4-*4* USED IN 12-26 T E R M IN A L BULB W ITH C IR C U IT OPTIONS CK T 90814 - * ONLY I C IR C U IT R E T E N T IO N NO S IZ E R E T E N T IO N 8 BULBS PCB TUBE PEGS PACKED TAPE & REEL PA C KED P O L A R IZ IN G

OD-880FHT

Abstract: OD-880LHT OD-880WHT OD880FHT
Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS .006 HIGH MAX OD-880WHT ANODE CASE • Extended operating temperature range .209 .212 .015 • No internal coatings • No derating or heat sink required to 80°C .183 .152 .187 .156 .100 .041

ODD-45W

Abstract: OD-148-C OD-148W OD-24F OD-880 OD-880E OD-880F OD-880F1 OD-880L OD-880W
Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES 1.00 MIN. ANODE CASE GLASS .006 HIGH MAX .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output

OD-880WHT

Contextual Info: HIGH TEMPERATURE GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS .006 HIGH MAX OD-880WHT ANODE CASE • Extended operating temperature range .209 .212 .015 • No internal coatings • No derating or heat sink required to 80°C .183 .152 .187 .156 .100 .041

OD-870F

Abstract: OD-870L OD-870W
Contextual Info: HIGH-SPEED GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS .006 HIGH MAX OD-870W ANODE CASE • High reliability LPE grown GaAlAs .209 .212 .015 • High power output • Fast response • Wide range of linear power output .183 .152 .187 .156 .100 .041 .017

ODT-880W

Abstract: aoz4060sh GaAlAs detector
Contextual Info: HIGH STABILITY GaAlAs IR EMITTERS FEATURES .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE .006 MAX GLASS ABOVE CAP TOP EDGE ODT-880W • Monitoring diode for power output stability DETECTOR CATHODE COMMON ANODE • Monolithic construction • Low unit price compared to adding a separate

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS GLASS .006 HIGH MAX .015 1.00 MIN. OD-880W FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package