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    IQ800L Search Results

    IQ800L Datasheets Context Search

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    IQ80xL series

    Contextual Info: IQ80xL series TECHNICAL DATA Si Photodiode, with integrated TI amplifier Features • • • • • • • • • • • Applications • Si-photodiode with integrated low noise JFET TI amplifier integrated feedback resistor and capacitor decadic staggered responsivity


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    iq80xliq802liq801liq800l+1iq80xl series PDF

    Contextual Info: Si – photodiode with integrated transimpedance amplifier IQ 800 L IQ 801 L IQ 802 L characteristics: • • • • • • • • • • • SI-photodiode with integrated low noise JFET-amplifier integrated feedback resistor and capacitor decadic staggered responsivity


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    iq802liq801liq800l PDF

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


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    rlu4116erlt390-50cmgrlt395-50cmgrlt400-50cmg+14th06-1watu61938489at1212at3112smd diode uj 64 asld3237vfr20/spl1550-10-9-pdsld3237vfsmd diode um 08smd diode umrlcd-m66h-750rlt905-30gsld3236vfrlt6650gli PDF

    Contextual Info: ROITHNER LASERTECHNIK PRESENTS. HIGH POWER RED LASER DIODES 5.6 mm, single mode, with monitor photodiode QL63K4SA-L, 635 nm, 60 mW, sm, 40 °C, 5.6 mm QL65L6SA, 650 nm, 80 mW, sm, 60 °C, 5.6 mm TO3 or C-mount, multi mode RLT635-150-C, 635 nm, 150 mW, mm, C-mount


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    ql63k4sa-lql65l6sarlt635-150-crlt635-150-to3+5rlt635-300-to3rlt67300tns375m-cpfviq801liq802l PDF