IPP881N08N Search Results

IPP881N08N Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IPP881N08N G		Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; V_DS (max): 80.0 V; R_{DS (on)} (max) (@10V): 7.0 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 80.0 A;	Original	PDF	223.22KB	6

IPP881N08N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PG-TO220-3 Abstract: JESD22 Contextual Info: IPP881N08N G n-channel Power-Transistor Product Summary Features • for dc-motor drive systems V DS 80 V R DS on ,max 7 mΩ ID 80 A • N-channel, normal level • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Type IPP881N08N G Package	Original	IPP881N08N PG-TO220-3 881N08N PG-TO220-3 JESD22	PDF

Catalog Datasheet

Type

Document Tags

PDF

PG-TO220-3

Abstract: JESD22
Contextual Info: IPP881N08N G n-channel Power-Transistor Product Summary Features • for dc-motor drive systems V DS 80 V R DS on ,max 7 mΩ ID 80 A • N-channel, normal level • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Type IPP881N08N G Package

Original

IPP881N08N PG-TO220-3 881N08N PG-TO220-3 JESD22

PDF