IPI180N10N3 G Search Results
IPI180N10N3 G Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPI180N10N3 G |
|
N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 18.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 43.0 A; | Original | 246.71KB | 10 | ||
| IPI180N10N3GXKSA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 43A TO262-3 | Original | 559.69KB |
IPI180N10N3 G Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPI180N10N3GXKSA1MOSFET N-CH 100V 43A TO262-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI180N10N3GXKSA1 | Tube | 500 |
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IPI180N10N3GXKSA1 | 5,500 | 308 |
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IPI180N10N3GXKSA1 | 6,050 | 1 |
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IPI180N10N3GXKSA1 | 478 | 1 |
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