IO15 Search Results

AN1064

Abstract: CY62167E 1M x 16 SRAM
Contextual Info: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)

Contextual Info: UPD482445G5-60 1/2 IL08D C-MOS 4M-BIT DUALPORT GRAPHICS BUFFER —TOP VIEW— 30 1 VDD DT/OE IN 2 3 GND 70 SC 69 SE IN 31 IN 32 33 GND 68 34 SIO0 I/O 4 67 IO15 W0/IO0 I/O 5 66 W15/IO15 SIO1 W1/IO1 I/O I/O 6 7 8 VDD I/O 65 SIO14 39 64 W14/IO14 40 I/O W15/IO15

55BV

Abstract: AN1064 CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI CY62167EV30LL
Contextual Info: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is

Contextual Info: CY62167EV18 MoBL PRELIMINARY 16-Mb 1M x 16 Static RAM Features input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Deselected (CE1HIGH or CE2 LOW) • Wide voltage range: 1.65V – 2.25V • Outputs are disabled (OE HIGH)

CY62177DV20

Abstract: AN1064 CY62177DV20LL-70BAI
Contextual Info: CY62177DV20 MoBL2 32-Mbit 2M x 16 Static RAM Features by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:

Contextual Info: IO43/SD_DAT0 IO44/SD_CMD IO39/SD_DAT3 1 3 5 7 9 IO18 IO22/CAN_RD1 IO36/SPI_MOSI2 IO35/SPI_SCK2 +5V VCC X9 LED_SPEED ETH_TX_DETH_RX_D- 1 3 5 7 9 IO46/AD7 IO7/AD3/AOUT/RXD3 IO24/SPI_MOSI1 IO27/SPI_SCK1 E IO6/AD2/TXD3 IO15 IO25/SPI_MISO1 AOSU Y IO45/AD6 IO8/AD0/TCH_XL

AN1064

Contextual Info: CY62136ESL MoBL 2 Mbit 128K x 16 Static RAM Features • Very high speed: 45 ns mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: ■ Wide voltage range: 2.2V to 3.6V and 4.5V to 5.5V

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V

VDR 0047

Abstract: AN1064 CY62146E
Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE HIGH)

CY62167DV18

Abstract: CY62167DV18LL-55BVXI
Contextual Info: CY62167DV18 MoBL 16-Mbit 1M x 16 Static RAM Features consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE1 HIGH or CE2 LOW)

CY62146E-45LL

Abstract: CY62146
Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 45 ns

46321

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE HIGH)

Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns

Contextual Info: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance

Contextual Info: CY62147EV18 MoBL2 4-Mbit 256K x 16 Static RAM Features The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when:

AN1064

Abstract: CY62126ESL-45ZSXI
Contextual Info: CY62126ESL MoBL 1-Mbit 64K x 16 Static RAM Features consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance

CY62167DV18

Abstract: CY62167DV18LL-55BVXI
Contextual Info: CY62167DV18 MoBL 16-Mbit 1M x 16 Static RAM Features consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE1 HIGH or CE2 LOW)

AN1064

Abstract: CY62167E
Contextual Info: CY62167E MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • (CE1 HIGH, or CE2 LOW, or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • The device is deselected (CE1 HIGH or CE2 LOW)

Contextual Info: CY7C1020D 512-Kbit 32 K x 16 Static RAM 512-Kbit (32 K × 16) Static RAM Features • Pin- and function-compatible with CY7C1020B ■ High speed ❐ tAA ■ = 10 ns Low active power ❐ ICC ■ consumption when deselected.The input and output pins (IO0 through IO15) are placed in a high-impedance state when:

Contextual Info: CY62157E MoBL 8-Mbit 512K x 16 Static RAM Features Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 45 ns

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V

AN1064

Abstract: CY62167EV18 CY62167EV18LL CY62167EV18LL-55BAXI CY62167EV18LL-55BVXI
Contextual Info: CY62167EV18 MoBL 16-Mbit 1M x 16 Static RAM Features by 99% when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is

Contextual Info: CY7C1020D 512-Kbit 32 K x 16 Static RAM 512-Kbit (32 K × 16) Static RAM Features • Pin- and function-compatible with CY7C1020B ■ High speed ❐ tAA ■ = 10 ns Low active power ❐ ICC ■ consumption when deselected.The input and output pins (IO0 through IO15) are placed in a high-impedance state when:

AN1064

Abstract: CY62146E
Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features • Very high speed: 45 ns mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: ■ Wide voltage range: 4.5V–5.5V