CY62146 Search Results

00107

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when

Contextual Info: A D V A N C E D CY62146V MoBL TM IN F O R M A T IO N 2 5 6 K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: -1 .8 V - 3 .3 V • • • • • Ultra low active, standby power Easy memory expansion with CE and OE features

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH).

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features cations such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when

Contextual Info: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when

Contextual Info: CY62146E MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE

925501

Contextual Info: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular

Contextual Info: CY62146ESL MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when

Contextual Info: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down

Contextual Info: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down

Contextual Info: 47V CY62146BV18 MoBL2TM 256K x 16 Static RAM Features • Low voltage range: — CY62146BV18: 1.65V–1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62146VLL-70ZI

Abstract: CY62146V
Contextual Info: 1*CY62146V MoBL CY62146V MoBL™ 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62146EV30LL-45ZSXI

Abstract: CY62146EV30 CY62146EV30LL CY62146DV30
Contextual Info: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through

CY62146V18

Contextual Info: CY62146V18 MoBL2 256K x 16 Static RAM Features • Low voltage range: — CY62146V18: 1.75V–1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

Contextual Info: 1*CY62147V MoBL CY62146CV25/30/33 ADVANCE INFORMATION MoBLTM 256K x 16 Static RAM Features through I/O15 are placed in a high-impedance state when: deselected CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write

Contextual Info: CY62146ESL MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption

VDR 0047

Abstract: AN1064 CY62146E
Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE HIGH)

CY62146V

Abstract: CY62146VLL
Contextual Info: CY62146V MoBL 4M 256K x 16 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected

CY62146CV18

Contextual Info: CY62146CV18 MoBL2 256K x 16 Static RAM Features • High Speed — 55 ns and 70 ns availability • Low voltage range: — 1.65V–1.95V • Pin Compatible with CY62146BV18 • Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz • •

CY62146CV30

Abstract: CY62146DV30 CY62146DV30L
Contextual Info: CY62146DV30 4-Mbit 256K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input/output pins (I/O0 through

CY62146CV18

Contextual Info: CY62146CV18 MoBL2 256K x 16 Static RAM Features • High Speed — 55 ns and 70 ns availability • Low voltage range: — 1.65V–1.95V • Pin Compatible with CY62146BV18 • Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz • •

CY62146EV30LL-45ZSXI

Abstract: CY62146DV30 CY62146EV30 CY62146EV30LL 925501
Contextual Info: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through

CY62146E-45LL

Abstract: CY62146
Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 45 ns

46321

Contextual Info: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE HIGH)