IO0IO15 Search Results

LB1616

Abstract: BS616UV4016 BS616UV4016AC BS616UV4016AI BS616UV4016DC BS616UV4016DI BS616UV4016EC BS616UV4016EI TSOP 2-44
Contextual Info: Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit BSI Ÿ Ÿ Ÿ Ÿ n FEATURES Ÿ Wide VCC operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V VCC_min.=1.65V at 25OC Ÿ Ultra low power consumption : VCC = 2.0V C-grade : 10mA(Max.) operating current

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous

CS26LV64173

Contextual Info: Low Power Pseudo SRAM 4 M Words x 16 bit CS26LV64173 Revision History Rev. No. 1.0 History Issue Date 1. New Release. Mar.27, 2013 2. Product Process change from 90nm to 65nm 3. The device build in Power Saving mode as below : 3-1. Deep Power Down DPD 3-2. Partial Array Refresh (PAR)

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16k/8k/4k x 16 MoBL ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous independent access ❐ One port with dedicated time multiplexed address and data

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous

Contextual Info: Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit BSI BS616LV4016 n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 3.6V Ÿ Very low power consumption : VCC = 3.0V C-grade : 25mA @55ns operating current I-grade : 27mA(@55ns) operating current

bz100

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16k/8k/4k x 16 MoBL ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous independent access ❐ One port with dedicated time multiplexed address and data

Contextual Info: CYDMX256A16/CYDMX256B16 CYDMX128A16/CYDMX128B16 CYDMX064A16/CYDMX064B16 16 K/8 K/4 K x 16 MoBL ADM Asynchronous Dual-Port Static RAM 16 K/8 K/4 K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous

Contextual Info: Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit BSI Ÿ Ÿ Ÿ Ÿ n FEATURES Ÿ Wide VCC operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V VCC_min.=1.65V at 25OC Ÿ Ultra low power consumption : VCC = 2.0V C-grade : 10mA(Max.) operating current

Contextual Info: CYDMX256A16, CYDMX256B16 CYDMX128A16, CYDMX128B16 CYDMX064A16, CYDMX064B16 16k/8k/4k x 16 MoBL ADM Asynchronous Dual-Port Static RAM Features • True dual-ported memory block that allow simultaneous independent access ❐ One port with dedicated time multiplexed address and data