INVERTER MMA 300 Search Results

Contextual Info: KSR2202 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R es is to r B u ilt In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R, = 10Kn, R, = 10KQ) • Complement to KSR1202 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

R713

Abstract: SR1210
Contextual Info: K SR 1210 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in Was Resistor {R>10kQ) • Complement to KSR2210 ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic

Contextual Info: KSR1207 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Rt ” 221tü, Rî=47kQ) • Complement to KSR2207 ABSOLUTE MAXIMUM RATINGS (TA-25t:)

KSR2209

Contextual Info: .SAMSUNG SEMICONDUCTOR INC IME KSR2209 D | 7 ^ 1 4 2 0 0 Ü7 1 S 1 1 | PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r B u ilt In • Sw itching Circuit, Inverter, Interface circuit Driver circuit • Built in bias R e s is to r (R =4.7K $1)

Contextual Info: KSR1007 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias R esistor Built In TO -92 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=22K£i, R2=47K£i) • C om plem ent to KSR2007 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

304 TRANSISTOR

Abstract: transistor ksr1010 KSR1010 KSR2010 Inverter mma 300
Contextual Info: SAMSUNG SEMICONDUCTOR I N C T ^ W f 14E KSR1010 D I 7^4142 0007033 b | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching Circuit, Inverter, interface circuit Driver circuit • Built in bias Resistor (R =10K i)

Contextual Info: KSR2005 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R ,=4.7K !i, R2=10KSi) • Complement to KSR1005 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

KSR1001

Abstract: KSR2001
Contextual Info: KSR1001 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r B u ilt In • Sw itching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7KÎ1, Ri= 4.7Kfi) • Complement to KSR2001 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

KSR1005

Abstract: KSR2005
Contextual Info: SAMSUNG SEMICONDUCTOR INC' KSR2005 14E | 7 ^ 1 4 2 0007CHS b | PNP EPITAXIAL SILICON TRANSISTOR T - SWITCHING APPLICATION Bias Resistor Built In 31 - 13 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=4.7KO, R,=10KO)

Contextual Info: KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri*10kQ, R2*47kQ) • Complement to KSR2006 ABSOLUTE MAXIMUM RATINGS {Tft=25t:)

Contextual Info: KSR1201 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R,= 4.7Kfl, R:=4.7KQ) • Complement to KSR2201 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)

T092S

Abstract: 47KQ KSR1207 KSR2207
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSR2207 J| 14E D | TTbMlMS 0007147 T PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver Circuit • Built in bias Resistor (H ,= 2 2 K Q R ,= 4 7 K 0 )

Contextual Info: KSR2208 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e s is to r B uilt In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R ,= 4 7 K íi, Rj = 22KÍ¡) TO-92S • C om p le m en t to KSR1208

Contextual Info: KSR1109 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Sw itching circuit. Inverter, Interface circuit, Driver C ircu it • B uilt in b ias R esisto r (R=4.7kfl) • Com plem ent to KSR 2109 ABSOLUTE MAXIMUM RATINGS (TA=25t:)

Contextual Info: KSR2201 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R i =4.7kfl, R2=4.7kfl) • Complement to KSR1201 A B S O LU T E MAXIMUM RATINGS (TA*25TC)

KSR1202

Abstract: KSR2202 c03v
Contextual Info: SAMSUNG SE M IC O N D U C T O R INC T -3 iW I IM E KSR1202 — — D 00070t>S fl | NPN EPITAXIAL SILICON TRANSISTOR ——— ^ — SWITCHING APPLICATION — — — mi mi . . « —— _ B ias R e s is to r B u ilt In TO-92S • Switching circuit, Inverter, Interface circuit Driver circuit

TRANSISTOR KJ

Abstract: KSR1007 KSR2007
Contextual Info: SAMSUNG SEMI CONDUCTOR I NC _ _ _ 1 4 E KSR2007 D | TTbMlMa 0 0 0 7 Q CH 3 | PNP EPITAXIAL SILICON TRANSISTOR 1 3 7-13 - SWITCHING APPLICATION * B ia s R e sis to r Built In • Sw itch ing C ircuit, Inverter, Interface circuit Driver circuit • Built in b ias R esistor (R ,= 2 2 K O r 2= 4 7 K 0 )

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2206 SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (1 ^= 1 0K£1, R2=47K£1) • C om plem ent to KSR 1206 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=22K£1, R2=47K£1) • C om plem ent to KSR 1207 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: KSR2007 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R ,= 2 2K 0 R 2=47KO) • Complement to KSR1007 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

KSR1206

Abstract: KSR2206
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2206 SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R ^ IO K Q , R2=47K£i) • C om plem ent to KSR 1206 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Inverter mma 300

Abstract: KSR1201 KSR2201
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSR1201 SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =4.7K£1, R2=4.7K£1) • C om plem ent to KSR2201 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: KSR2004 PNP EPITAXIAL SILICON TRAN SISTO R SW ITCHING APPLICATION Bias Resistor Built In - • Switching circuit, Inverter, Interface circuit, Driver Circuit • BuiK in bias Resistor (R ,-47U , R2-4nQ) • Complement to KSR1004 TO-92 ABSO LU TE MAXIMUM RATINGS (TA-2 5 <C )

KSR1202

Abstract: KSR2202
Contextual Info: KSR2202 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (Ri =10, R2=10K£1) • C om plem ent to KSR 1202 ABSOLUTE MAXIMUM RATINGS (TA=25°C)