INVERTER HIGH VOLTAGE POWER TRANSISTOR Search Results

SL4069UB

Abstract: SL4069UBD SL4069UBN
Contextual Info: SL4069UB Hex Inverter High-Voltage Silicon-Gate CMOS The SL4069UB types consist of six inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of circuits such as the SL4049UB Hex Inverter/Buffers are not required.

BUX48

Abstract: BUX48A application BUX48A BUX48 mospec BUX48 datasheet bux48a equivalent
Contextual Info: MOSPEC SWITCHMODE SERIES NPN POWER TRANSISTORS NPN BUX48 BUX48A … designed for use in high-voltage, high-speed, power switching regulators, converter, converter, inverter, motor control system application. * Collector-Emitter Sustaining VoltageVCEO sus =400 V (Min)-BUX48

2SB825

Abstract: 2SD1061
Contextual Info: SavantIC Semiconductor Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low saturation voltage ·Complement to type 2SD1061 APPLICATIONS ·Universal high current switching as solenoid driving;high speed inverter

2SB825

Abstract: 2SD1061
Contextual Info: Inchange Semiconductor Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SD1061 APPLICATIONS ・Universal high current switching as solenoid driving;high speed inverter

BUX48

Contextual Info: NPN BUX48 VERY HIGH VOLTAGE POWER TRANSISTOR The BUX48 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3. They are a high voltage, high speed and they are intended for use in converters, inverter, switching regulator, motor control systems. ABSOLUTE MAXIMUM RATINGS

2SB825

Abstract: 2SD1061
Contextual Info: JMnic Product Specification 2SB825 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SD1061 APPLICATIONS ・Universal high current switching as solenoid driving;high speed inverter and converter applications

BU921

Abstract: bu921 equivalent
Contextual Info: SavantIC Semiconductor Product Specification BU921 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current;high voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control.

BU922

Abstract: npn darlington 500v 2a
Contextual Info: SavantIC Semiconductor Product Specification BU922 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current;high voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control.

BD142

Abstract: Comset
Contextual Info: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.

BD142

Abstract: bd142 equivalent
Contextual Info: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.

voltage regulator IC 723

Abstract: MJE13006 6221 ic IC 723 voltage regulator applications
Contextual Info: MJE13006 NPN POWER TRANSISTORS 300 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. COLLECTOR Features: • v CEO sus = 300V (Min). • VCEV = 600V blocking capability

743 ic

Abstract: JE13009 MJE13009 IC 741 AMP
Contextual Info: MJE13009 NPN POWER TRANSISTORS 400 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus - 400V (Min). • VCEV = 700V blocking capability

mje13008

Abstract: C735
Contextual Info: MJE13008 NPN POWER TRANSISTORS 300 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus = 300V (Min). • VCEV = 600V blocking capability

LB123T

Abstract: marking 2332
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors LB123T TRANSISTOR NPN TO-126 FEATURES 1. EMITTER High voltage, high speed power switch z Switch regulators z PWM inverter and Motor controls z Solenoid and relay drivers

lt 8225

Contextual Info: SP4428| Electroluminescent Lamp Driver High Drive Capability for Low Voltage Applications • Low Power +1,1V to +1,7V Single Cell Operation ■ Low-Cost EL Driver Ideal for Backlighting ■ DC-to-AC Inverter Generates High Voltage AC to Drive EL Lamps ■ Externally Adjustable Oscillator

e13005 2

Abstract: E13005 MJE1300 E13005 -2 transistor E13005 E13005 D e13005- 2 transistors mje13005 npn transistors 700V 1A UJ05
Contextual Info: MJE13005 NPN POWER TRANSISTORS 400 VOLTS 4 AMP, 75 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • V C E O su s = 400V (Min). • VcEV = 700V blocking capability CASE STYLE T0-220AB

Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter

MIG10J503L

Contextual Info: MIG10J503L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J503L MIG10J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

marking mitsubishi

Abstract: MIG15J503L
Contextual Info: MIG15J503L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG15J503L MIG15J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI

SIM6812

Contextual Info: Application Information SIM6800M Series High Voltage 3-Phase Motor Driver ICs Introduction The SIM6800M series is an inverter power module which includes power MOSFETs or IGBTs, pre-driver IC, and bootstrap diodes with limit resistors in a single package.

schematic diagram dc-ac inverter using scr

Abstract: SCHEMATIC circuit scr H-Bridge LQN4N NEC lcd inverter schematic coil craft Q vs frequency ABE 814 DO1608C-474 EL12 IN4148 SP4428
Contextual Info: SP4428 Electroluminescent Lamp Driver High Drive Capability for Low Voltage Applications • Low Power +1.1V to +1.7V Single Cell Operation ■ Low-Cost EL Driver Ideal for Backlighting ■ DC-to-AC Inverter Generates High Voltage AC to Drive EL Lamps ■ Externally Adjustable Oscillator

74AUP2G14

Abstract: 74AUP2G14GF 74AUP2G14GM 74AUP2G14GW JESD22-A114D
Contextual Info: 74AUP2G14 Low-power dual Schmitt trigger inverter Rev. 01 — 19 December 2006 Product data sheet 1. General description The 74AUP2G14 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.

MJE13007

Abstract: v733 VCB 400V MJE13 U105
Contextual Info: MJE13007 NPN POWER TRANSISTORS 400 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • VcEO sus = 400V (Min). • VCEV = 700V blocking capability C A S E S T Y L E T0-220AB

TD 716

Abstract: MJE13004
Contextual Info: MJE13004 NPN POWER TRANSISTORS 300 V O LTS 4 AMP, 75 W ATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • VcEO sus = 300V (Min). • VcEV = 600V blocking capability • Excellent switching time: tr = 0.7 /¿s (Max.),