INVERTER Search Results

Contextual Info: RN4604 RN4604 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT U n it in mm A N D DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in SM6 (Super Mini Type w ith 6 leads) • W ith B uilt-in Bias Resistors • Sim plify C ircuit Design • Reduce a Q uantity of P arts and M anufacturing Process

74ALS05

Abstract: diode sy 106 diode sy 180 10
Contextual Info: TOSHIBA TENTATIVE TC74VHC05F/FN/FT TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC05F, TC74VHC05FN, TC74VHC05FT HEX INVERTER OPEN DRAIN _ The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.

Contextual Info: SN54ALS05A, SN74ALS05A HEX INVERTERS WITH OPEN-COLLECTOR OUTPUTS S D A S 1 9 0 A - APRIL 1982 - R EVISED DECEMBER 1994 Package Options Include Plastic Small-Outllne D Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mll DIPs

diode E155

Abstract: mig20j
Contextual Info: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.

Contextual Info: TOSHIBA TC4S11F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4S11F 2 INPUT N A N D GATE The TC4S11F is 2-input positive logic NAND gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance

mig10J

Contextual Info: TOSHIBA MIG10J855H TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10 J855H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage :

lu 2705

Contextual Info: RN2701,2702,2703 RN2704,2705,2706 RN2701 U n it in mm SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT 2.1 ± 0.1 A N D DRIVER CIRCUIT APPLICATIONS. • , 1.2 5±0 .1 , H . •■■■«! ¥ Including Two Devices in USV (U ltra Super Mini Type w ith 5

1117F

Contextual Info: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors

CI sn74LS05

Contextual Info: TYPES SN5405, SN54H05, SN54LS05, SN54S05, SN7405, SN74H05, SN74LS05, SN74S05 HEX INVERTERS WITH O P EN -C O LLEC TO R OUTPUTS R E V I S E D D E C E M B E R 1983 SN5405, SN54H05 . . . J PACKAGE SN54LS05, S N 5 4 S 0 5 _ I OR W PACKAGE SN7405, SN74H05 . . . J OR N PACKAGE

Contextual Info: TO SH IBA TENTATIVE MIG50J804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3ji 50A /600V High Speed Type IGBT

TLP55

Contextual Info: T O SH IB A TLP5590GM TOSHIBA PHOTOCOUPLER GaAM s IRED + PHOTO-IC TLP55 90GM) TRANSISTOR INVERTOR U nit in mm INVERTER FOR AIR CONDITIONER LINE RECEIVER IPM INTERFACES The TOSHIBA TLP559 IGM) consists of a GaA£As high-output light emitting diode and a high speed detector of one chip photo diodetransistor.

Contextual Info: TOSHIBA T C74LCX14F/FN/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74LCX14F, TC74LCX14FN, TC74LCX14FT LOW VOLTAGE HEX SCHMITT INVERTER WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX14 is a high performance CMOS SCHMITT Note The JEDEC SOP (FN) is not

mig15j

Contextual Info: T O SH IB A TENTATIVE M IG 1 5 J805 E TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MI G 1 5 J 8 0 5 E HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage

Contextual Info: TC74LVX14F/FH/FS HEX SCHMITT INVERTER The T C 7 4 L V X 1 4 is a h ig h speed C M O S H EX SC H M IT T IN V ER T E R fabricated w ith silicon gate C2M O S technology. D e sig n e d fo r use in 3.3 V o lt systems, it achieves h igh speed o p e ra tio n w h ile m a intain ing the C M O S low p ow e r

Contextual Info: TC4S71F TOSHIBA C MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2 INPUT OR GATE Unit in nm The TC4S71F contains 2-input positive logic O R gates. + 0.2 1.6-5.1 Gate output with inverter buffer improves the input-output ch aracteristics and if the load

Contextual Info: TOSHIBA RN2110F,RN2111F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN711Í1F RN7111F • m ■ 'm g ■ m ■ 'm ■ ■ ■ ■■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors

Contextual Info: TC4SU11F 2 INPUT NAND GATE TC4SU11F is 2 input NAND gate respectively. The internal circuit o f only basic NAND circuit w ith o u t th e w ave fo rm shaping inverter. T herefore, this is suitable for th e applications in liner circuits such as oscillator circuits and am plifier circuits,

Contextual Info: TOSHIBA TC7SH04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH04F, TC7SH04FU INVERTER The TC7SH04 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves The high speed operation similar to equivalent

Contextual Info: TC7SU04FJC7SU04FU INVERTER The TC7SU 04 is a high speed C^MOS IN VERTER fabricated w ith silicon gate C2MOS technology. It achieves high speed operation sim ilar to equivalent LSTTL w h ile m aintainin g the C2MOS low pow er dissipation. The internal circuit is com posed o f sin gle stages inverter,

SN54LV14

Abstract: 2020CN
Contextual Info: SN54LV14, SN74LV14 HEX SCHMITT-TRIGGER INVERTERS _ S C L S 1 8 7 B - FEBRUARY 1 9 9 3 - REVISED APRIL 1996 EPIC Enhanced-Performance Implanted CMOS 2-|i Process SN54LV14 . . . J OR W PACKAGE SN74LV14. . . D, DB, OR PW PACKAGE (TOP VIEW) TVplcal V q l p (Output Ground Bounce)

IC 7416

Abstract: f 7416 7416 7406 ic
Contextual Info: TYPES SN5406, SN5416, SN7406, SN7416 HEX INVERTER BUFFERS/DRIVERS WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS REVISED DECEMBER 1983 I • Converts TTL Voltage Levels to MOS Levels S N 5406, SN 5416 . . J OR W PACKAGE S N 7406. S N 7416 . . . J OR N PACKAGE High Sink-Current Capability

TLP582

Abstract: 1119a
Contextual Info: GaAßAs IRED TLP582 a PHOTO-IC Unit in mm HOS FET GATE DRIVER TRANSISTOR INVERTER The Toshiba TLP582 consists of a GaAiAs light emitting 1 8 .9 ± 0.3 diode and integrated high gain, high speed photodetector. The detector has a totem pole output stage that

300a 1000v thyristor

Abstract: sg2000 thyristor 450A
Contextual Info: SG2000 R,U,W,EX 24 TOSHIBA GATE TURN-OFF THYRISTOR SG2000 (R, U, W, EXI 24 (SG2000R24) U nit in mm CHOPPER, INVERTER APPLICATION • Repetitive Peak Off-State Voltage : Vd r m =1300, 1600, 1800, 2500V • R.M.S On-State Current • Peak Turn-Off Current • Critical Rate of Rise of On-State Current

P channel 50A IGBT

Contextual Info: TO SH IBA MIG50J101 H M I G 5 0 J 1 01 H TO SH IBA INTELLIGENT GTR M O D U LE SILICON N CHANNEL IGBT HIGH PO W E R SW ITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • Integrates Inverter & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.