INTERNATIONAL RECTIFIER 1660 Search Results

I1092

Contextual Info: Provisional Data Sheet No. PO 9.1287B International I G R Rectifier HEXFET PO W E R M O S F E T IRFY140CM N -C H A N N E L Product Summary 100 Volt, 0.077Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

I298

Abstract: I-293 2N7218 FM140 IRFM140
Contextual Info: Data Sheet No. PD-9.486C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR N-CHANNEL IRFM14Q 2IM7218 JANTXSN7S18 JANTXVSN7S18 [REF: MIL-S-19500/SS6] 100 Volt, 0.077 Ohm HEXFET Product Summary The HEXFET technology ¡s the key to International

2N7218

Abstract: 0535t
Contextual Info: Data Sheet No. PD-9.486C INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM140 SN7S18 JANTXSN7S18 JANTXVSN7S18 N-CHANNEL [REF: MIL-S-195DO/596] 100 Volt, 0.077 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

Contextual Info: Data Sheet No. PD-9.486C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM140 2N-721S JANTXSN7S18 JANTXV2N7218 N-CHANNEL [REF: MIL-S-19SOO/596] 100 Volt, 0.077 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

IQR 2400

Abstract: R38B30A SS452 A3 82
Contextual Info: II«R T-Ol-3-3 4Ö55452 0010035 3 INTERNATIONAL RECTIFIER 82 R38B SERIES 3000-2400 VOLTS RANGE 1090 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES vol. TACE RATINdS VHRH> VR - V Han« rap« peak rovarae and direct voltage Tj a -40° to 175°C t i R30B3OA

RUTTONSHA all diodes

Abstract: R1600B RUTTONSHA 12 FM 120 all diodes RUTTONSHA POWER DIODE RUTTONSHA diodes RUTTONSHA diode RUTTONSHA diode 12 fm 40 200AB R1600 DO200AB
Contextual Info: Ruttonsha International Rectifier Ltd. STANDARD RECOVERY DIODES RUTTONSHA High Power Diode Hockey Puk Version R1600 B.C Series Types : R1600PB 04 to R1600PB 25 R1600PB B - PUK FEATURES ❖ Wide current range ❖ High voltage ratings up to 2500 V ❖ High surge current capabilities

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

IRFN054

Contextual Info: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

JANTX2N7334

Abstract: irfy430
Contextual Info: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6

Contextual Info: PD-95818B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides

Contextual Info: PD-96925 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides

Contextual Info: PD - 91860 IRHNA57160 IRHNA58160 REPETITIVE AVALANCHE AND dv/dt RATED MOSFET TRANSISTOR N - CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD MOSFET 100Volt, 0.011Ω Product Summary International Rectifier’s RAD HARD technology MOSFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation

IRHYS67230CM

Abstract: IRHYS63230CM PD-96925B
Contextual Info: PD-96925B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides

Contextual Info: Bulletin 127105 rev. A 0 9 /97 International IGR Rectifier T.RIA SERIES MEDIUM POWER PHASE CONTROL THYRISTORS Power Modules 50 A 70 A 90 A Features • Electrically Isolated base plate ■ Types up to 1600 V RRM ■ 3500 V RMg Isolating voltage ■ Simplified mechanical designs,

IRF140

Abstract: irf140 ir IRF1401
Contextual Info: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFN054

Contextual Info: Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

Contextual Info: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A International Rectifier’s R6 TM technology provides

EI96

Abstract: EI-96 EI96-12
Contextual Info: •NTÇüNATiJ*-;«.,.tt . International IÖ R Rectifier !tt> 5è Diodes ANN:ViKS«r 10. V^|»@7tX Port Number VRW* M •fav @ tc (A (Q 'f(AV) (V) >FSM 50 Hi 60Hi RGMC{DC) (A) (A) (°C/W) Fox on Demand Number Notes Cose Outline Key Power Module IRKE91/10

SD1100C

Contextual Info: Bulletin 12073 rev. C 02/97 International i ö r Rectifier SD1100C.L s e r ie s STANDARD RECOVERY DIODES Hockey Puk Version Features 1 1 7 0 A • W ide current range ■ High voltage ratings up to 3200V ■ High surge current ca p abilities ■ D ittused junction

Contextual Info: Bulletin 12066 rev. B 09/94 International i ö r Rectifier SD303C.C FAST RECOVERY DIODES s e r ie s Hockey Puk Version Features • High power FAST recovery diode series ■ 1.0 to 2.0 fis recovery tim e ■ High voltage ratings up to 2500V ■ High current ca pability

DIODE SMD 55a

Abstract: ir mosfet smd package smd 2f IRFN054
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

IRFY140CM

Abstract: IRFY140C
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1287B IRFY140CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.077Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

smd diode sm 3c

Abstract: tr/smd diode sm 3c
Contextual Info: |p |-0 p p jQ j-jQ P |Q | Provisional Data Sheet No. PD-9.1543A IQ R Rectifier HEXFET POWER MOSFET IRFN0S4 N -C H A N N E L 60 Volt, 0.020Q HEXFET Product Summary H E X F E T technology is the key to International Rectifier's advanced line of power MOSFET transis­