INTERNAL ABSOLUTE VOLTAGE REFERENCE Search Results
INTERNAL ABSOLUTE VOLTAGE REFERENCE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LM106H/883 |
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LM106 - Voltage Comparator |
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| LM710H |
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LM710 - Comparator, Voltage |
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| LM106H/B |
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LM106 - Voltage Comparator |
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| ICL8212MTY/B |
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Programmmable High Accuracy Voltage Detecor |
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| ICL8211MTY/883B |
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Programmmable High Accuracy Voltage Detecor |
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INTERNAL ABSOLUTE VOLTAGE REFERENCE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Data Sheet 27468.18 SI-3018LSA LOW-VOLTAGE, HIGH-CURRENT 1.8 V LINEAR REGULATOR IN INTERNAL CONNECTION 1 2 IC VR SUPPLY 3 ENABLE 4 VS 8 OUT 7 OUT 6 GND 5 GND SUB Dwg. PK-012 ABSOLUTE MAXIMUM RATINGS Input Voltage, VI . 16 V |
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SI-3018LSA PK-012 | |
linear regulator sankenContextual Info: Data Sheet 27468.18 SI-3018LSA LOW-VOLTAGE, HIGH-CURRENT 1.8 V LINEAR REGULATOR IN INTERNAL CONNECTION 1 2 IC VR SUPPLY 3 ENABLE 4 VS 8 OUT 7 OUT 6 GND 5 GND SUB Dwg. PK-012 ABSOLUTE MAXIMUM RATINGS Input Voltage, VI . 16 V |
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SI-3018LSA SI-3018LSA linear regulator sanken | |
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Contextual Info: CTS05S40 Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CTS05S40 | |
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Contextual Info: CBS10S30 Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2B 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CBS10S30 | |
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Contextual Info: CTS05S30 Schottky Barrier Diode Silicon Epitaxial CTS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CTS05S30 | |
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Contextual Info: CUS05S30 Schottky Barrier Diode Silicon Epitaxial CUS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CUS05S30 | |
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Contextual Info: CUS05S30 Schottky Barrier Diode Silicon Epitaxial CUS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CUS05S30 | |
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Contextual Info: CTS05S40 Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CTS05S40 | |
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Contextual Info: CUS05S30 Schottky Barrier Diode Silicon Epitaxial CUS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CUS05S30 | |
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Contextual Info: CUS10S30 Schottky Barrier Diode Silicon Epitaxial CUS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
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CUS10S30 | |
GK-025-1
Abstract: 3052V GK-030 3120c transistor GK-026-1 3050c 3122V SI-3025LSA SI-3025LSA-TL GK-026
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SI-3025LSA PK-012 SI-3150N O-220 SI-3150C SI-3151N SI-3152V SLA3002M GK-025-1 3052V GK-030 3120c transistor GK-026-1 3050c 3122V SI-3025LSA SI-3025LSA-TL GK-026 | |
SI-3152V
Abstract: GK-025-1 GK-026-2 3122V 3152V 3050c SI-3033LSA SI-3033LSA-TL 3120c transistor GK-029-2
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SI-3033LSA PK-012 SI-3150N O-220 SI-3150C SI-3151N SI-3152V SLA3002M SI-3152V GK-025-1 GK-026-2 3122V 3152V 3050c SI-3033LSA SI-3033LSA-TL 3120c transistor GK-029-2 | |
3122V
Abstract: 3050c SI-3033LSA SI-3033LSA-TL GK-029 3122V VR 3122v transistor GK-025
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SI-3033LSA PK-012 SI-3150N O-220 SI-3150C SI-3151N SI-3152V SLA3002M 3122V 3050c SI-3033LSA SI-3033LSA-TL GK-029 3122V VR 3122v transistor GK-025 | |
3050c
Abstract: 3122V SI-3018LSA SI-3018LSA-TL GK-029 SI-3122V GK-027
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SI-3018LSA PK-012 SI-3150N O-220 SI-3150C SI-3151N SI-3152V SLA3002M 3050c 3122V SI-3018LSA SI-3018LSA-TL GK-029 SI-3122V GK-027 | |
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LAS6351P1
Abstract: LAS6350P1 LAS-6351P1 s635 LAS6350 vsk64 LAS6351 S6350 6350p LAS-6351
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OCR Scan |
LAS63S0, LAS6350P1, 6351PI 037-J LAS6350 LAS6351 LAS6350P1 LAS6351P1 LAS6351P1 LAS6350P1 LAS-6351P1 s635 LAS6350 vsk64 LAS6351 S6350 6350p LAS-6351 | |
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Contextual Info: yi/i/jxiyi/i 19-0110, Rev 0:2/93 Quad, 12-Bit, ¡iP-C om patible DAC The monolithic voltage-output DACs inside the MX390 are la s e r-trim m e d to ±1/2LSB max nonlinearity MX390KD/TD and absolute accuracy of +0.05% of full scale. The internal buried-zener voltage reference |
OCR Scan |
12-Bit, MX390 MX390KD/TD) 20ppm/Â 1000Mi2) MX390 | |
MIL-STD-863B
Abstract: mx390 AD390 MX390JD MX390KD MX390SD MX390TD
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OCR Scan |
12-Bit, MX390 28-pin 12-bit MX390KD/TD) 20ppm/cC MIL-STD-863B AD390 MX390JD MX390KD MX390SD MX390TD | |
VSK64
Abstract: LAS6350P1 LAS6351P1 6351P1 LAS-6351P1 LAS6351 LAS6350 LAS-6350P1 LAS-6351
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OCR Scan |
LAS6350, LAS6350P1, 6351P1 LAS6350 LAS6351 LAS6350P1 LAS6351P1 VSK64 LAS6350P1 LAS6351P1 6351P1 LAS-6351P1 LAS6351 LAS6350 LAS-6350P1 LAS-6351 | |
LAS6320P
Abstract: 6320P 12 to -12v cuk converter 24V DC to 5V 1A DC flyback converter 6321p 24V INPUT DC to 5V 1A OUTPUT DC flyback converter Lambda Pulse Modulator LAS6321P
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OCR Scan |
6320P, 6321P 6320P 6321P 750mA LAS6320P 12 to -12v cuk converter 24V DC to 5V 1A DC flyback converter 24V INPUT DC to 5V 1A OUTPUT DC flyback converter Lambda Pulse Modulator LAS6321P | |
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Contextual Info: Absolute encoders - analogue Hollow shaft ø10 to ø14 mm Optical singleturn encoders with analogue output ATD2AH00 Features – Analog signals – 14 bit singleturn – Internal self-diagnostic – Voltage output or current output – Factory-set adjustable angle 0° - 360° |
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ATD2AH00 ATD2AH00 S21SG8 | |
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Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings |
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FJB3307D | |
FJB3307D
Abstract: QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat
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FJB3307D FJB3307D QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat | |
GK-025-1
Abstract: GK-027-1 gk03 GK-031 GK-023 GK-029-1 GK-026 SI-3025LSA SI-3025LSA-TL GK-026-1
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SI-3025LSA PK-012 EI18EI GK-025-1 GK-027-1 gk03 GK-031 GK-023 GK-029-1 GK-026 SI-3025LSA SI-3025LSA-TL GK-026-1 | |
GK-025-1
Abstract: GK-026-2 GK-031 GK-029-2 GK-023 GK transistor SI-3033LSA SI-3033LSA-TL PK-012 GK-010-1
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SI-3033LSA PK-012 EI18EI GK-025-1 GK-026-2 GK-031 GK-029-2 GK-023 GK transistor SI-3033LSA SI-3033LSA-TL PK-012 GK-010-1 | |