CUS05S30 Search Results
CUS05S30 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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CUS05S30 |
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CUS05S30 - Small-Signal Schottky Barrier Diodes | Original | 146.43KB | 5 | ||
CUS05S30,H3F |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 30V 500MA USC | Original | 149.05KB |
CUS05S30 Price and Stock
Toshiba America Electronic Components CUS05S30,H3FDIODE SCHOTTKY 30V 500MA USC |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CUS05S30,H3F | Digi-Reel | 63,242 | 1 |
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CUS05S30,H3F | Reel | 16 Weeks | 3,000 |
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CUS05S30,H3F | 16,544 |
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CUS05S30,H3F | Cut Strips | 11 | 16 Weeks | 1 |
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CUS05S30,H3F | Reel | 3,000 |
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Toshiba America Electronic Components CUS05S30,H3F(BDiode Small Signal Schottky Si 30V 0.5A 2-Pin USC T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CUS05S30,H3F(B | 12,000 | 878 |
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CUS05S30,H3F(B | 9,768 |
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Toshiba America Electronic Components CUS05S30,H3F(TDiode Small Signal Schottky Si 30V 0.5A 2-Pin USC T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CUS05S30,H3F(T | 3,000 | 906 |
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CUS05S30,H3F(T | Cut Tape | 2,835 | 1 |
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CUS05S30,H3F(T | 30,500 |
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CUS05S30,H3F(T | 15 Weeks | 3,000 |
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Toshiba America Electronic Components CUS05S30H3FAVAILABLE EU |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CUS05S30H3F | 56 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CUS05S30 | 18,000 |
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CUS05S30 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CUS05S30 Schottky Barrier Diode Silicon Epitaxial CUS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
Original |
CUS05S30 | |
Contextual Info: CUS05S30 Schottky Barrier Diode Silicon Epitaxial CUS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
Original |
CUS05S30 | |
Contextual Info: CUS05S30 Schottky Barrier Diode Silicon Epitaxial CUS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 ) Characteristics Peak reverse voltage |
Original |
CUS05S30 |