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    Diodes Incorporated

    Diodes Incorporated ZXMS6004DN8-13 (INTELLIFET SERIES)

    Mosfet, Dual N-Ch, 60V, 1.2A, Soic; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.35Ohm; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1V; Power Rohs Compliant: Yes |Diodes Inc. ZXMS6004DN8-13
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark () ZXMS6004DN8-13 (INTELLIFET SERIES) Cut Tape 3,765 5
    • 1 $0.81
    • 10 $0.81
    • 100 $0.81
    • 1000 $0.81
    • 10000 $0.81
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    ZXMS6004DN8-13 (INTELLIFET SERIES) Reel 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.59
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    Diodes Incorporated ZXMS6004FFQTA (INTELLIFET)

    Mosfet, N-Ch, 60V, 2A, Sot-23F; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:1V; No. Of Pins:3Pinsrohs Compliant: Yes |Diodes Inc. ZXMS6004FFQTA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark () ZXMS6004FFQTA (INTELLIFET) Cut Tape 118 1
    • 1 $0.35
    • 10 $0.35
    • 100 $0.35
    • 1000 $0.35
    • 10000 $0.35
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    ZXMS6004FFQTA (INTELLIFET) Reel 3,000
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    • 10000 $0.58
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    INTELLIFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BSP75NTA

    Abstract: D8154
    Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ


    Original     		BSP75N OT223 550mJ 522-BSP75NTA BSP75NTA BSP75NTA D8154 PDF

    TS16949

    Abstract: ZXMS6002G ZXMS6002GTA
    Contextual Info: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic


    Original     		ZXMS6002G 550mJ D-81541 TS16949 ZXMS6002G ZXMS6002GTA PDF

    Contextual Info: VZETIX SEMICONDUCTORS BSP75G 60V self-protected low-side IntelliFET MOSFET switch Summary Continuous drain source voltage V ds=60V On-state resistance 550m O Nominal load current 1.4A V|N = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. M onolithic over tem perature, over


    OCR Scan     		BSP75G 550mJ OT223 PDF

    Contextual Info: ZXMS6004SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Features and Benefits ADVANCE INFORMATION Product Summary •  Continuos drain source voltage On-state resistance 60V 500mΩ   Nominal load current VIN = 5V Clamping Energy


    Original     		ZXMS6004SG 480mJ ZXMS6004SG DS32247 PDF

    BSP75N

    Abstract: 24V PLC BSP75NTA
    Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ


    Original     		BSP75N OT223 550mJ BSP75N 24V PLC BSP75NTA PDF

    TS16949

    Abstract: ZXMS6002G ZXMS6002GTA
    Contextual Info: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic


    Original     		ZXMS6002G 550mJ D-81541 TS16949 ZXMS6002G ZXMS6002GTA PDF

    Contextual Info: A Product Line of Diodes Incorporated ZXMS6005DG ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary •    Features and Benefits Continuous drain source voltage On-state resistance Nominal load current VIN = 5V


    Original     		ZXMS6005DG 490mJ ZXMS6005DG DS32247 PDF

    Contextual Info: ZXMS6003G 60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limit Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description


    Original     		ZXMS6003G 550mJ D-81541 PDF

    Contextual Info: A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 mΩ Nominal load current VIN = 5V 2A Clamping Energy 490 mJ SOT223 Package


    Original     		ZXMS6005DG OT223 ZXMS6005DG DS32247 PDF

    Contextual Info: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description


    Original     		ZXMS6004SG 480mJ ZXMS6004SG Log62-3154 D-81541 PDF

    Contextual Info: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION SOT223 PACKAGE Self protected low side MOSFET. Monolithic over temperature, over current, over


    Original     		BSP75G 550mJ OT223 PDF

    BSP75G

    Contextual Info: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over


    Original     		BSP75G 550mJ OT223 SCBSP75GDSC BSP75G PDF

    ZXMS6004DT8TA

    Abstract: ZXMS6004DT8
    Contextual Info: A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.2 A Clamping Energy 210 mJ SM8 Package


    Original     		ZXMS6004DT8 ZXMS6004DT8 DS32245 ZXMS6004DT8TA PDF

    Contextual Info: ZXMS6004SG Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • • On-State Resistance Nominal Load Current VIN = 5V


    Original     		ZXMS6004SG ZXMS6004SG 480mJ DS33610 PDF

    ZXMS6005DGTA

    Abstract: DS32247 ZXMS6005DG
    Contextual Info: A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 mΩ Nominal load current VIN = 5V 2A Clamping Energy 490 mJ SOT223 Package


    Original     		ZXMS6005DG OT223 ZXMS6005DG DS32247 ZXMS6005DGTA PDF

    BSP75N

    Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		BSP75N 550mJ OT223 PDF

    Contextual Info: A Product Line of Diodes Incorporated ZXMS6005SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 mΩ Nominal load current VIN = 5V 2A Clamping Energy 480 mJ SOT223 Package


    Original     		ZXMS6005SG OT223 ZXMS6005SG DS32249 PDF

    ZXMS6006SG

    Contextual Info: A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • • Nominal load current VIN = 5V


    Original     		ZXMS6006SG 480mJ AEC-Q101 DS35141 ZXMS6006SG PDF

    dual Solenoid Driver

    Abstract: ZXMS6006DT8TA 6006D
    Contextual Info: A Product Line of Diodes Incorporated ZXMS6006DT8 ADVANCE INFORMATION 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • •


    Original     		ZXMS6006DT8 210mJ AEC-Q101 DS35143 dual Solenoid Driver ZXMS6006DT8TA 6006D PDF

    siemens automotive relay dc 12v

    Abstract: Bsp78
    Contextual Info: June 2010 Know How Guide IntelliFET - low side self-protected MOSFET Features Benefits • Load dump protection • Designed for harsh operating environments without the need for extra clamps. • Thermal shutdown non-latching auto restart • Self-protecting when in high


    Original     		D-81541 A1103-04, siemens automotive relay dc 12v Bsp78 PDF

    Contextual Info: ZXMS6004FF 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary •    Continuos drain source voltage On-state resistance Nominal load current VIN = 5V Clamping Energy Features and Benefits 60V 500mΩ 1.3A 90mJ Description


    Original     		ZXMS6004FF ZXMS6004FF DS33609 PDF

    ZXMS6006D

    Abstract: ZXMS6006DG ZXMS6006DGTA zxms6006
    Contextual Info: A Product Line of Diodes Incorporated ZXMS6006DG ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • • Nominal load current VIN = 5V


    Original     		ZXMS6006DG 490mJ ZXMS6006DG DS35142 ZXMS6006D ZXMS6006DGTA zxms6006 PDF

    Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ


    Original     		BSP75N OT223 550mJ PDF

    ZXMS6003

    Abstract: TS16949 ZXMS6003G ZXMS6003GTA SC36
    Contextual Info: ZXMS6003G 60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limit Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description


    Original     		ZXMS6003G 550mJ D-81541 ZXMS6003 TS16949 ZXMS6003G ZXMS6003GTA SC36 PDF