INP PHOTONICS Search Results

6131a

Abstract: GR-468-CORE 2933 APLMP1000 axon GR468-CORE DWDM AXON
Contextual Info: Optoelectronic Devices Light Monitoring PIN Photodector APLMP1000 The Axon Photonics APLMP1000 is a wide-area PIN photodetector device based on InGaAs/InP material. This product is developed for the intensity detection of wideband long wavelengths. With different integration levels

transistor C3866

Abstract: C3866 C3866* transistor c3866 transistor C3866 FE M7824 FE P C3866 FE P C3866 17 R5509-42 pmt divider circuit
Contextual Info: LOW-LIGHT-LEVEL NIR NEAR INFRARED:1.4µm/1.7µm MEASUREMENT PHOTOMULTIPLIER TUBES R5509-42/R5509-72 IN THE NIR with EXCLUSIVE COOLERS APPLICATION EXAMPLE: Photoluminescence measurement Sample 1 SAMPLE TEMPERATURE Sample structure: InAlAs/InGaAs (SQWs)/InP(sub)

optical source

Abstract: Fabry-Perot 1550 nm Fabry-Perot 1550 nm butterfly Laser InP laser transmitter datasheet laser 1550 spectral laser 1550 nm laser transmitter 1550 nm TO56 laser TO-CAN
Contextual Info: Fabry-Perot Laser Diode High-power 1550 nm laser diode Preliminary DESCRIPTION Quantum Photonics’ Fabry-Perot (FP) laser diode is based on a high-power InP ridge waveguide laser structure. Advanced epitaxial wafer growth techniques and die bonding processes enable high-power laser diode operation in the eye-safe 1550 nm wavelength

InP Photonics

Abstract: PIN-TIA application
Contextual Info: P/N: T-11-2315C-02-XX 155 Mbps PIN-TIA Receiver Modules Features InGaAs/InP PIN Photodiode with transimpedance amplifer High Responsivity Single +5V operation -40~85ºC operating temperature Single mode / Multi mode Application High Speed 8 Pin Package with SC Port

25gbps pin-tia

Contextual Info: P/N: T-11-2500-X3-XXX/XXX-XX 2.5Gbps PIN-TIA Receiver Modules 3.3V Features z z z z z InGaAs/InP PIN Photodiode with transimpedance amplifer High Sensitivity with AGC* Differential ended output Single Supply Voltage 3.3V -40~85°C operating temperature Packaging

Contextual Info: P/N: T-11-1250-X3-XXX-X-XX PIN-TIA Receiver Modules-Receptacle & Pigtailed 3.3V Features z z z z z InGaAs/InP PIN Photodiode with trans-impedance amplifier High Sensitivity with AGC* Differential ended output Single +3.3V operation -40~85°C operating temperature

Contextual Info: P/N: T-11-2500-D3-SXX-XX 2.5 Gbps PIN-TIA Receiver Modules-ROSA 3.3V Features InGaAs/InP PIN Photodiode with transimpedance amplifer High Sensitivity with AGC* Differential ended output Single Supply Voltage 3.3V -40~85°C operating temperature z z z z z

PIN-TIA

Contextual Info: P/N: T-11-2315T-08-XX 155Mbps PIN-TIA Receiver modules Features l InGaAs/InP PIN Photodiode with transimpedance amplifer l High Sensitivity l Single +3.3V operation l -40~85° C operating temperature l For Single-mode and Multi-mode Application l High Speed

InGaAs Photodiode 1550nm

Abstract: photodiode responsivity 1550nm with FC connector
Contextual Info: P/N: R-11-040AX-P-SXX/XXX-X-XX 40um Analog InGaAs PIN Photodiode Modules-pigtailed Features z z z z z z InGaAs/InP PIN Photodiode High responsivity at 1310nm and 1550nm Low dark current Low intermodulation distortion High responsivity Hermetically sealed 3-pin metal case

InGaas PIN photodiode

Abstract: InGaAs Photodiode 1550nm R-11-075B-R-SFC
Contextual Info: P/N: R-11-075X-X-XXX-X-XX InGaAs PIN Photodiode Modules Features z z z z z z InGaAs/InP PIN Photodiode High responsivity at 1310m and 1550nm Low dark current Fast pulse response -40~85°C operating temperature Hermetically sealed 3-pin metal case Packaging

Contextual Info: Near-infrared streak camera C11293-02 New from Hamamatsu For picosecond time-resolved measurements of low level light emissions in the near-infrared region 1000 nm to 1650 nm with semiconductor photocathode (InP/InGaAs) 1400 1500 The new C11293-02 streak camera delivers much higher sensitivity in the

InGaAs Photodiode 1550nm

Abstract: Analog Photodiode, 1550nm, photodiode responsivity 1550nm with FC connector Analog Photodiode 1550nm PIN photodiode InGaAs 1550nm Photodiode 1550nm bandwidth
Contextual Info: P/N: R-11-075AX-P-SXX/XXX-X-XX 75um Analog InGaAs PIN Photodiode Modules-pigtailed Features z z z z z z InGaAs/InP PIN Photodiode High responsivity at 1310m and 1550nm Low dark current Low intermodulation distortion High responsivity Hermetically sealed 3-pin metal case

Contextual Info: P/N: T-11-2315T-04-XX 155 Mbps PIN-TIA Receiver Modules Features l InGaAs/InP PIN Photodiode with transimpedance amplifer l High Responsivi ty l Single +5V operation l -40~85° C operating temperature l For Single-mode Application l High Speed l 8 Pin Package with ST Port

Contextual Info: Single Angled Facet SAF Laser Diode 1550 nm semiconductor gain chip (Preliminary) DESCRIPTION Quantum Photonics’ Single Angled Facet (SAF) gain chip is based on high-power InP ridge waveguide laser diode technology. Laser cavity oscillation is prevented by active waveguide engineering to produce a front angled facet which in combination with antireflection coating ensures a broadband low facet reflectivity. Optional mode transformers monolithically incorporated at the facets

Contextual Info: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in

Contextual Info: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with

Contextual Info: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in

operation of ic 741

Abstract: s6841 transistor 1BW S8119 LE UW
Contextual Info: PHOTO IC Photo IC for optical switch NEW S6841, S8119 Photo IC with optical switch functions S6841 and S8119 are specifically designed for optical switches. A transmission mode or reflection mode optical switch can be easily configured when used in combination with an LED.

Contextual Info: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with

Photodiode Array 32 element

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 m The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an

Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low

Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an

Contextual Info: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register