INGAAS PHOTODIODE ARRAY CHIP Search Results
INGAAS PHOTODIODE ARRAY CHIP Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GCM32ED70J476KE02L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for Automotive | |||
GRM022R61C104ME05L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM033D70J224ME01D | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM155R61H334KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM2195C2A273JE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
INGAAS PHOTODIODE ARRAY CHIP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor C4159Contextual Info: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a |
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G6891, G6893 P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, transistor C4159 | |
PIN photodiode crosstalkContextual Info: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter |
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G8909-01 SE-171 KIRD1053E01 PIN photodiode crosstalk | |
InGaas PIN photodiode chip
Abstract: G8909-01 KIRD1053E02 SE-171
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G8909-01 SE-171 KIRD1053E02 InGaas PIN photodiode chip G8909-01 KIRD1053E02 | |
Contextual Info: PHOTODIODE InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications l 250 µm pitch, 40 ch parallel readout l Low cross-talk l Precise chip position tolerance: ±0.05 mm l DWDM monitor with AWG • General ratings Parameter |
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G8909-01 SE-171 KIRD1053E02 | |
DWDM AWG
Abstract: InGaAs photodiode array chip
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G8909-01 SE-171 KIRD1053E02 DWDM AWG InGaAs photodiode array chip | |
photo diode array InGaAs
Abstract: G8909-01 InGaAs photodiode array chip KIRD1053E02 SE-171
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G8909-01 SE-171 KIRD1053E02 photo diode array InGaAs G8909-01 InGaAs photodiode array chip KIRD1053E02 | |
InGaAs photodiode array chip
Abstract: G8909-01 KIRD1053E01 SE-171 50 um photodiode
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G8909-01 SE-171 KIRD1053E01 InGaAs photodiode array chip G8909-01 KIRD1053E01 50 um photodiode | |
g890901
Abstract: G8909-01
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G8909-01 KIRD1053E03 g890901 G8909-01 | |
Contextual Info: InGaAs PIN photodiode array G8909-01 Photodiode array for DWDM monitor Features Applications 250 m pitch, 40 ch parallel readout DWDM monitor with AWG Low crosstalk Precise chip position tolerance: ±0.05 mm Structure Parameter Photosensitive area Value |
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G8909-01 KIRD1053E03 | |
C7557 Software
Abstract: high frequency linear cmos IMAGE SENSOR G7233 INGaAS CCD long range detector in circuit
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G7231/G7233 C7557 C7557 Software high frequency linear cmos IMAGE SENSOR G7233 INGaAS CCD long range detector in circuit | |
InGaAs photodiode array chip
Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
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G11135 SE-171 KMIR1018E06 InGaAs photodiode array chip charge amplifier array Image Sensors G11135-512DE | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E02 | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E01 | |
G8053
Abstract: G8053-512R G8053-512S G8050 G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S
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G8050 G8053 SE-171 KMIR1009E03 G8053-512R G8053-512S G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S | |
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Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 B1201, KMIR1011E11 | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E01 | |
G9204
Abstract: C7557 C8061-01 G9201 G9202 G9203 G9203-256D G9204-512D infrared cmos digital image Photodiode Array 32 element
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G9201 G9204 SE-171 KMIR1012E05 C7557 C8061-01 G9202 G9203 G9203-256D G9204-512D infrared cmos digital image Photodiode Array 32 element | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E03 | |
detector ingaasContextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E09 detector ingaas | |
CDS light sensor
Abstract: G8050 G8051 G8052 G8052-256D G8053 G8053-512D infrared cmos digital image
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G8050 G8053 SE-171 KMIR1009E04 CDS light sensor G8051 G8052 G8052-256D G8053-512D infrared cmos digital image | |
Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 m The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08 | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E04 | |
Contextual Info: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an |
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G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08 | |
Contextual Info: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, |
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G9201 G9204 SE-171 KMIR1012E05 |