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    INFRARED EMITTING DIODE Search Results

    INFRARED EMITTING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPS92642QPWPRQ1
    Texas Instruments Automotive synchronous buck infrared LED driver 16-HTSSOP -40 to 125 Visit Texas Instruments
    54LS298/BEA
    Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) PDF Buy
    54S153/BEA
    Rochester Electronics LLC 54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) PDF Buy
    54F257/BEA
    Rochester Electronics LLC 54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906BEA) PDF Buy
    54F257/B2A
    Rochester Electronics LLC 54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906B2A) PDF Buy

    INFRARED EMITTING DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AP 1100 R1

    Abstract: LN58
    Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :


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    infrared detectors

    Abstract: Infrared Emitting Diode LNA2601L
    Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm


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    LNA2601L infrared detectors Infrared Emitting Diode LNA2601L PDF

    side view infrared diode sharp

    Abstract: GP2Y0A60 GP2Y10 GP2Y0A60SZ0F/GP2Y0A60SZLF GP2Y0AF15
    Contextual Info: INFRARED EMITTING DIODE LINEUP / INFRARED EMITTING DIODES OPTO • Infrared Emitting Diode Lineup Type Single-end lead Side view type Surface mount type Package Half intensity angle Features Epoxy resin with lens Epoxy resin with lens/ leadless General purpose/Narrow beam angle


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    GL480E00000F GL4800E0000F GL100MN0MP GL100MN1MP GL100MD1MP1 GP2Y0AH01K0Fâ GP2Y1010AU0F GP2Y1012AU0F GP2Y1023AU0F side view infrared diode sharp GP2Y0A60 GP2Y10 GP2Y0A60SZ0F/GP2Y0A60SZLF GP2Y0AF15 PDF

    Contextual Info: CONTENTS INFRARED EMITTING DIODES. 6 VERTICAL CAVITY SURFACE EMITTING LASERS. 63


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    Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to monochromatic light :


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    V30K20

    Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
    Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :


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    Contextual Info: INFRA-RED EMITTING DIODES KP-1608F3C KP-1608SF4C Features ! Description WATER CLEAR LENS AVAILABLE. ! 1.6mmx0.8mm ! HIGH F3 Made with Gallium Arsenide Infrared Emitting diodes. SMT LED, 1.1mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting


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    KP-1608F3C KP-1608SF4C KDA0429 SEP/21/2001 KP-1608F3C KP-1608SF4C PDF

    Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm


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    LN189S

    Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical


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    LN189S LN189S PDF

    Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:


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    LN162S CTRLR102-001 PDF

    IR Blue Light infrared

    Abstract: LN66
    Contextual Info: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors


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    100mA IR Blue Light infrared LN66 PDF

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 900 nm (typ.)


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    LN172 100mA PDF

    LNA2801L

    Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors


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    LNA2801L LNA2801L PDF

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN66F G aAs Infrared Light Emitting Diode For light source of remote control systems • Features • High-power output, high-efficiency : Ie = 13.0 mW/sr min. • Light emitting spectrum suited for silicon photodetectors


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    LN66F PDF

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN155 G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 940 nm (typ.)


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    LN155 PDF

    LN66A

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN66A G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : Ie = 9 mW /sr min. Light emitting spectrum suited for silicon photodetectors


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    LN66A 0102Q. LN66A PDF

    Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 6 mW /sr min. Light emitting spectrum suited for silicon photodetectors


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    LNA2801L 0102Q. PDF

    LN172

    Abstract: Infrared Emitting Diode DSA003761
    Contextual Info: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 Features High-power output, high-efficiency : PO = 12 mW typ. Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) 2.4±0.3 12.7 min.


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    LN172 100Hz LN172 Infrared Emitting Diode DSA003761 PDF

    LN66F

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW/sr min. Light emitting spectrum suited for silicon photodetectors


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    LN66F LN66F PDF

    LN69

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 3.5 m W /sr min. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)


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    LN155

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN155 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors XP = 940 nm (typ.)


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    LN155 LN155 PDF

    LN172

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : X P = 900 nm (typ.)


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    LN172 100mA 100Hz LN172 PDF

    LN68

    Contextual Info: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)


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    Contextual Info: Panasonic Infrared Light Emitting Diodes LN69 G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : Ie = 3.5 mW /sr min. • Light emitting spectrum suited for silicon photodetectors : A,P = 940 nm (typ.)


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