INFRARED EMITTING DIODE Search Results

infrared diode

Abstract: TRANSISTOR C 2577 GL4800E0000F Infrared Emitting Diode Infrared Phototransistor infrared emitting CIRCUIT infrared infrared transistor GL527V INFRARED DIODES
Contextual Info: Copyright 2005, Sharp Electronics Corp. All Rights Reserved. Chapter 3 – Use of Infrared Emitting Diodes 3-1 Chapter 3 – Use of Infrared Emitting Diodes 3-2 Chapter 3 – Use of Infrared Emitting Diodes 3-3 multiplied by n. Chapter 3 – Use of Infrared Emitting Diodes

TRANSISTOR D 880

Abstract: H21A1 photodiode TRansistor A 940 k 30 transistor l14f1 photodiode 022 020 transistor transistor l14f1 optologic 0118 transistor L14G2 transistor
Contextual Info: Fairchild Semiconductor Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes continued Mfr.Õs Type Fig. Power Out Min. VF Max. Peak Emission Wavelength (nm) Beam Angle 1/2 Angle (¡) F5F1

Contextual Info: Infrared Emitting Diodes

AP 1100 R1

Abstract: LN58
Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :

infrared detectors

Abstract: Infrared Emitting Diode LNA2601L
Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm

side view infrared diode sharp

Abstract: GP2Y0A60 GP2Y10 GP2Y0A60SZ0F/GP2Y0A60SZLF GP2Y0AF15
Contextual Info: INFRARED EMITTING DIODE LINEUP / INFRARED EMITTING DIODES OPTO • Infrared Emitting Diode Lineup Type Single-end lead Side view type Surface mount type Package Half intensity angle Features Epoxy resin with lens Epoxy resin with lens/ leadless General purpose/Narrow beam angle

Contextual Info: CONTENTS INFRARED EMITTING DIODES. 6 VERTICAL CAVITY SURFACE EMITTING LASERS. 63

Contextual Info: CONTENTS INFRARED EMITTING DIODES. 6 VERTICAL CAVITY SURFACE EMITTING LASERS. 63

infrared diode

Abstract: GL1F20 IS1U20 serial vs parallel communication
Contextual Info: GL1F20 GL1F20 Infrared Communication IrDA1.0 Compatible InfraredEmitting Diode • Features ■ Outline Dimensions 1. IrDA1.0 compatible infrared emitting diode (Transmission rate : 2.4 to 115.2kbps) (Unit : mm) 2.2 2. Built-in infrared emitting diode circuit

Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to monochromatic light :

V30K20

Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :

Contextual Info: Emitter Specifications F5G1 Infrared Emitter Gallium Aluminum Arsenide Infrared Emitting Diode T he F5G1 is a Gallium-Aluminum-Arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength of 880 nanometers. This device will provide a significant increase in

KDA0429

Abstract: KP-1608F3C KP-1608SF4C
Contextual Info: INFRARED EMITTING DIODES KP-1608F3C KP-1608SF4C Description Features ! WATER CLEAR LENS AVAILABLE. F3 Made with Gallium Arsenide Infrared Emitting ! 1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. diodes. !HIGH POWER OUTPUT. SF4 Made with Gallium Aluminum Arsenide Infrared

Contextual Info: INFRA-RED EMITTING DIODES KP-1608F3C KP-1608SF4C Features ! Description WATER CLEAR LENS AVAILABLE. ! 1.6mmx0.8mm ! HIGH F3 Made with Gallium Arsenide Infrared Emitting diodes. SMT LED, 1.1mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting

AP1608F3C

Abstract: AP1608SF4C
Contextual Info: INFRA-RED EMITTING DIODES AP1608F3C AP1608SF4C Features ! WATER Description CLEAR LENS AVAILABLE. ! 1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting ! HIGH POWER OUTPUT. ! PACKAGE: F3 Made with Gallium Arsenide Infrared Emitting diodes.

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

OSI photo detector

Abstract: 1N6266
Contextual Info: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940

Contextual Info: European “Pro Electron” Registered Types _ CQX14, CQX15, CQX16, CQX17 Infrared Emitter GaAs Infrared Emitting Diode The CQX14, CQX15, C.QX16, CQXI7 series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy with a peak wave

Contextual Info: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors

LN162S

Abstract: GaAs 1000 nm Infrared Emitting Diode
Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :

LN189S

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical

Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:

LN162S

Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW typ. 12.5 min. Infrared light emission close to monochromatic light :

LN189S

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical