INFRARED DIODES Search Results

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

LN189S

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical

infrared detectors

Abstract: Infrared Emitting Diode LNA2601L
Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm

AP 1100 R1

Abstract: LN58
Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :

Contextual Info: Panasonic Infrared Light Emitting Diodes LN162S G aAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 3.5 mW typ. • Infrared light emission close to monochromatic light : A,P = 950 nm (typ.)

OF LED 55B

Abstract: LED55B LED55C LED56 LED56F 55BF ge 55b NMTC LED55BF LED55CF
Contextual Info: Optoelectronic Specifications Infrared Emitter LED55B, LED55C,LED56, LED55BF, LED55CF, LED56F Gallium Arsenide Infrared-Em itting Diode The GE Solid State LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes which emit non-coherent, infrared energy with a peak wave length of

Contextual Info: Order this document by MC13173/D MC13173 Advance Information Infrared Integrated Transceiver IC INFRARED TRANSCEIVER The MC13173 is a low power infrared integrated system IRIS . It is a unique blend of a split IF wideband FM receiver and a specialized infrared

LN162S

Contextual Info: Panasonic Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P 0 = 3.5 mW typ. • Infrared light emission close to m onochromatic light : A,P = 950 nm (typ.)

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2601L G aAs Infrared Light Em itting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm

Contextual Info: Panasonic Infrared Light Emitting Diodes LN162S G aAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 3.5 m W typ. • Infrared light em ission close to monochrom atic light : A,P = 950 nm (typ.)

Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to monochromatic light :

V30K20

Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :

Contextual Info: Order this document by MC13173/D MOTOROLA M C 13173 Advance Information Infrared Integrated Transceiver 1C INFRARED TRANSCEIVER The MC13173 is a low power infrared integrated system IRIS . It is a unique blend of a split IF wideband FM receiver and a specialized infrared

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2601L G aAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency • Light em itting spectrum suited for silicon photodetectors • Infrared light emission close to m onochrom atic light : A,P = 950 nm

infrared diode

Abstract: LN184 power diode 100mA
Contextual Info: Infrared Light Emitting Diodes LN184 Unit : mm , 1.0 max. GaAlAs Infrared Light Emitting Diode 4.5±0.2 2.0 0.29 Light source for distance measuring systems ø4.6±0.15 Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : λP = 880 nm

LNA2601L

Contextual Info: Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Features High-power output, high-efficiency 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Infrared light emission close to monochromatic light : λP = 950 nm

LN51

Abstract: LN51F LN51L
Contextual Info: Panasonic Infrared Light Emitting Diodes LN51F, LN51L U nit : mm LN51F GaAs Infrared Light Emitting Diodes For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 6 mW typ. • Fast response : tr, tf = 1 jlls (typ.) • Infrared light emission close to m onochromatic light :

ic iR light control

Abstract: VF 100 PANASONIC pulse forward current
Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 G aAs Infrared Light Em itting Diode For optical control systems • Features « H igh-pow er output, high-efficiency : P Q = 3.5 m W typ. « Light em itting spectrum suited for silicon photodetectors t Infrared light em ission close to m onochrom atic light :

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 M Di ain sc te on na tin nc ue e/ d Fast response and high-speed modulation capability : tr, tf =20 ns typ. Infrared light emission close to monochromatic light : λP = 880 nm(typ.)

APT1608SF4C

Contextual Info: 1.6x0.8mm INFRARED EMITTING DIODE Part Number: APT1608SF4C Description Features 1.6mmX0.8mm SMT LED, 0.75mm THICKNESS. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. MECHANICALLY AND SPECTRALLY MATCHED TO PHOTOTRANSISTOR. WATER CLEAR LENS.

Contextual Info: 1.6x0.8mm INFRARED EMITTING DIODE Part Number: APT1608SF4C-PRV Features Description z1.6mmX0.8mm SMT LED, 0.75mm thickness. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting zMechanically and spectrally matched to phototransistor. diodes. zPackage: 2000pcs / reel .

Photodiodes

Abstract: Phototransistors Infrared LED 940nm i r led 940nm
Contextual Info: INFRARED S E R I E S SELECTION GUIDE PART NO. SYSTEM • INFRARED EMITTIMG DIODES : • PHOTODIODES : LAMP CATEGORY • PHOTOTRANSISTORS : • PHOTOREFLECTORS : | pSIl LIGHT SOURCE | |- LENS APPEARANCE I 1 ^ 1 ^ [T"|

TFK BPW 75

Abstract: TFK 940 TFK 19 001 tfk bpw 77 tfk BPX 28 diode s .* tfk cqy 35 n TFK bpw BPW19 MB28C
Contextual Info: CQY 39 Zehnteilige Galliumarsenid-Lumineszenzdiodenzeile 10 Element GaAs Infrared Emitting Diodes Array Anwendung: Strahlungsquelle im nahen Infrarot-B ereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers Besondere Merkmale:

APT1608F3C

Contextual Info: 1.6x0.8mm INFRARED EMITTING DIODE Part Number: APT1608F3C Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to phototransistor. z Package: 2000pcs / reel .