INFRA RED DIODE Search Results

IR TIL81

Abstract: TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR The B P W 4 1 D is a large: area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which contains a near infra-red transmissive filter such that the device is sensitive to infra-red radiation only, and

Contextual Info: XTHI30BF850 Part Number: www.SunLED.com T-1 3mm INFRA-RED EMITTING DIODE Features MECHANICALLY AND SPECTRALLY MATCHED TO THE XRNI30W PHOTOTRANSISTOR. BLUE TRANSPARENT LENS AVAILABLE HIGH POWER OUTPUT. Notes: 1. All dimensions are in millimeters (inches).

Contextual Info: XTHI53BF Part Number: www.SunLED.com T-1 3/4 5mm INFRA-RED EMITTING DIODE Features MECHANICALLY AND SPECTRALLY MATCHED TO THE XRNI55W PHOTOTRANSISTOR. BLUE TRANSPARENT LENS AVAILABLE HIGH POWER OUTPUT. Notes: 1. All dimensions are in millimeters (inches).

Contextual Info: XZTHI53W Part Number: www.SunLED.com 1.6X0.8mm INFRA-RED EMITTING DIODE Features 1.6mmX0.8mm SMT LED, 1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. WATER CLEAR LENS. PACKAGE: 2000PCS / REEL. RoHS COMPLIANT. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: Part Number: www.SunLED.com XZTNI56W-1 3.0x1.0mm INFRA-RED EMITTING DIODE Features 3.0mm x 1.0mm SMT LED, 2.5mm THICKNESS. LOW POWER CONSUMPTION. WIDE VIEWING ANGLE. IDEAL FOR BACK LIGHT AND INDICATOR. VARIOUS COLORS AND LENS TYPES AVAILABLE. PACKAGE : 3000PCS / REEL.

phototransistor 3F

Abstract: L-34F3BT L-32P3C L-32P3C L-34F3BT
Contextual Info: T-1 3mm INFRA-RED EMITTING DIODE L-34F3BT Description Features ! MECHANICALLY AND SPECTRALLY MATCHED F3 Made with Gallium Arsenide Infrared Emitting diodes. TO THE L-32P3C PHOTOTRANSISTOR. ! BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE HIGH POWER OUTPUT.

Contextual Info: Part Number: www.SunLED.com XTHI30W T-1 3mm INFRA-RED EMITTING DIODE Features MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. CWATER CLEAR LENS. RoHS COMPLIANT. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ± 0.25(0.01") unless otherwise noted.

Contextual Info: XTHI30W860 Part Number: www.SunLED.com T-1 3mm INFRA-RED EMITTING DIODE Features MECHANICALLY AND SPECTRALLY MATCHED TO THE PHOTOTRANSISTOR. WATER CLEAR LENS. RoHS COMPLIANT. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ± 0.25(0.01") unless otherwise noted.

MLX81101

Abstract: MLX90302 SUN HOLD relay MD-5 MLX90614Dxx MLX90614XCF
Contextual Info: MLX90614 family Single and Dual Zone Infra Red Thermometer in TO-39 Features and Benefits Applications Examples High precision non-contact temperature measurements Thermal Comfort sensor for Mobile Air Conditioning control system Temperature sensing element for residential,

860 diode

Contextual Info: XTHI53W860 Part Number: www.SunLED.com T-1 3/4 5mm INFRA-RED EMITTING DIODE Features MECHANICALLY AND SPECTRALLY MATCHED TO THE XRNI55W PHOTOTRANSISTOR. WATER CLEAR LENS AVAILABLE HIGH POWER OUTPUT. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ± 0.25(0.01") unless otherwise noted.

PL78C0

Abstract: infra red infra red diode
Contextual Info: PD Inc LD PL78/83/98 Series Near IR Laser Diode Modules PD-LD Inc. offers a variety of packaging options for its’ Near Infra Red Series of laser diodes. These units are available in ready-t o-use, fibercoupled packages, including FC, ST, and SC receptacles, as well as fiberpigtailed units.

DRM001

Abstract: pir schematic PIR D 203 S PIR 203 S ON LINE UPS MC68HC908 ds1307 interface to pic microcontroller infrared sensor with pic sharp lcd lm16a211 IC1 LM7808 lcd 11059
Contextual Info: 68HC08M6 HC08M68HC 8M68HC08M DRM001/D Passive Infrared PIR Intruder Detection Using the MC68HC908JK1/3, Incorporating Remote Control Adjustment Using the MC68HC908GP32 Designer Reference Manual blank Passive Infrared (PIR) Intruder Detection Using the MC68HC908JK1/3,

Contextual Info: SSA-005E&S Miniature IR Array SSA-005 is an eight element plastic moulding designed for use with miniature T 3/4 size opto electronic components. The resulting array is of minimum size at 0.1 inch pitch in a compact housing. The housing is equally suitable for

ALCATEL WABCO

Abstract: MTC-3054 wabco Westinghouse mtc-3054 3054 wabco 7103 SMD 10E4 10E6 CECC00802 EIA-481-2
Contextual Info: MTC-3054 CAN Interface T Data Sheet Application Specific Standard Products Features Description • Technology: High voltage BICMOS HBIMOS • Line interface circuit for Controller Area Network (CAN - ISO/DIS 11898) • Up to 500 Kbit/s data rates • Integrated protection against

fl014

Abstract: 314P AN-994 EIA-541 IRFL014
Contextual Info: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description

pj 69 diode

Abstract: FL014 RVM SOT223 FL014 Example mosfet SOT-223 marking code IOR b41 sot223 Ir314 pj 66 diode ON52 AN-994
Contextual Info: International S Rectifier PD 9.1298 IRLL1905 PRELIMINARY HEXFET Power MOSFET • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling V dss = 55V f^DS on = 0.30Q Id = 1.6A D escription Fourth Generation HEXFETs from International Rectifier utilize advanced

IRF9956

Abstract: F7101 IRF7101 IRF7303 IRF7313 IRF7503 MS-012AA
Contextual Info: PD - 91559B IRF9956 l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.10Ω

EIA-541

Abstract: IRF7201 MS-012AA
Contextual Info: PD- 91100D IRF7201 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = 30V RDS on = 0.030Ω

Contextual Info: International SRectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET Power MOSFET • • • • • • Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Vdss = 55 V ^D S o n - 0.045Q

BFE smd diode

Abstract: SMD rectifier 729 mosfet smd SSs smd diode marking 1Ss Diode BFE smd MR 4011 smd marking 6z sol 4011 be IRFL014 IRFL5505
Contextual Info: P D -9.1622 International IQ R Rectifier IRFL5505 PRELIMINARY HEXFET Power MOSFET • • • • • • Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Voss = -55V R DS on = 0 .1 1

IRF7313

Abstract: EIA-541 F7101 IRF7101 MS-012AA MOSFET IRF7313
Contextual Info: PD - 91480B IRF7313 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description

Contextual Info: f H P D - 9 .1 4 8 0 A International IG R Rectifier IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channei MOSFET Surface Mount Fully Avalanche Rated Voss = 30V 52 a E r - i G2 n r — RDS on = 0.029Q Top View

Contextual Info: PD -9.1379A International IO R Rectifier IRLL3303 PRELIMINARY HEXFET Power MOSFET • • • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance