INDUCTOR VK200 Search Results

MARCON NH capacitor

Abstract: UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead
Contextual Info: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is

RG316-25

Abstract: 25 ohm semirigid diode t25 4 L5 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz vk200 ferrite bead 220 k ohm potentiometer VK200 INDUCTOR vk200.10 diode gp 434
Contextual Info: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

RG316-25

Abstract: diode Zener t25 4 c8 T20 88 DIODE neosid diode t25 4 L5 MF variable CAPACITOR 50v Fair-Rite ATC 200B diode t25 4 c6 SD2932
Contextual Info: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz M244 epoxy sealed DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

NEOSId

Abstract: RG316-25
Contextual Info: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

diode t25 4 L5

Abstract: 4 carbon wire resistor ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms DIODE T25 4 c8 diode L2.70 inductor vk200 resistance 220 ohm 220 k ohm resistor 470 OHM 50 W RESISTANCE
Contextual Info: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

5W 6.8 ohm k ceramic resistor

Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm
Contextual Info: SD2922  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is

diode Zener t25 4 c5

Abstract: diode gp 434 RG316-25 diode t25 4 L5 diode t25 4 c5 SD2932 200B 700B ST40 neosid
Contextual Info: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
Contextual Info: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

5W 6.8 ohm k ceramic resistor

Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r
Contextual Info: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is

neosid* 10k

Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
Contextual Info: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.

inductor vk200

Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
Contextual Info: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.

inductor vk200

Abstract: 10A ferrite bead 25 ohm semirigid ZENER MARKING C8 ST vk200 ferrite bead ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE diode L2.70 MARKING code mf stmicroelectronics
Contextual Info: SD2932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metallized N-channel MOS

SD2932

Abstract: 200B 700B RG316 ST40 SD2932 reference T20 56 diode diode Zener t25 4 c5
Contextual Info: SD2932 RF power transistors HF/VHF/UHF n-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metallized n-channel MOS

Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS

88-108 rf amplifier

Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
Contextual Info: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.

VK200 INDUCTOR

Abstract: inductor vk200 choke vk200 VK200 r.f choke MRF240 vk200 rf choke VK200 4B inductor VK200-4B allen bradley resistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt VHF large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain

VK200 INDUCTOR

Abstract: inductor vk200 VK200 4B inductor choke vk200 MRF240 Unelco Bradley Semiconductor allen bradley resistor VK200-4B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt V H F large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain

VK200 INDUCTOR

Abstract: inductor vk200
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

MRF240

Abstract: VK200 inductor of high frequencies choke vk200 VK200 4B inductor inductor vk200 VK200 INDUCTOR 2204B VK200 allen bradley 150
Contextual Info: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment.

J115 mosfet

Abstract: MRF175LU
Contextual Info: MOTOROLA SEM ICO NDU CTO R TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect T ransistors MRF175LU M RF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

VK200 inductor of high frequencies

Abstract: VK200 INDUCTOR
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F175LV M R F175LU The RF MOSFET Line RF P o w er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FETs . . . designed for broadband commercial and military appli cations using single

VK200 INDUCTOR

Abstract: inductor vk200 VK200 inductor of high frequencies
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

MRF240

Abstract: BUY60 MRF240 equivalent
Contextual Info: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA MRF240 . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. • High Common Emitter Power Gain

VK200 INDUCTOR

Abstract: MRF164 gogo board MRF164W inductor vk200 vk200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F164W The RF TMOS Line P o w er Field E ffe c t Transistor Motorola Preferred Devices N-Channel Enhancement Mode Designed primarily for wideband large-signal output and driver stages to 500 MHz. • Guaranteed Performance at 400 MHz, 28 Vdc