INDUCTIV Search Results

MP4007

Contextual Info: SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR 4 IN 1 MP4007 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ± 0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin) . High Collector Power Dissipation.

Contextual Info: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this

mp4002

Contextual Info: MP4002 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 HIGH POWER S WITCHING APPLICATIONS. HAMMER DRIVE, INDUSTRIAL APPLICATIONS Unit in mm PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ±0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin)

G50Q2YS50

Contextual Info: TOSHIBA MG50Q2YS50A TEN TATIVE TO S H IB A G TR M O D U LE SILICO N IM C H A N N EL IG B T MG50Q2YS50A HIGH PO W ER SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load

Contextual Info: UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection

Contextual Info: TO SHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

mp42

Contextual Info: MP4201 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-7T-MOSm 4 IN 1 HIGH POWER HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 2 5.2 ± 0 .2 LOAD SWITCHING. • 4-Volt Gate D rive Available

BY575

Contextual Info: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage

MP3008

Contextual Info: MP3008 SILICON NPN EPITAXIAL TYPE_ DARLINGTON POWER TRANSISTOR 3 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Small Package by Full Molding.

Contextual Info: TO SHIBA TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE MG25Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

TS1937

Abstract: TS19376
Contextual Info: TS19376 1A Step-down High Brightness LED Driver SOT-89-5L Pin Definition: 1. SW 2. GND 3. DIM 4. CSN 5. VIN General Description The TS19376 is a continuous conduction mode inductive step-down converter, designed for driving single or multiple series connected LED efficiently from a voltage source higher than the total LED chain voltage. The

Contextual Info: MP4501 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Four Darlington Power Transistors in One MP4501 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins)

Contextual Info: HA / HD48 Series • Ratings from 12A to 125A @ 48-530 VAC • SCR output for heavy industrial loads • AC or DC control • Zero-crossing resistive loads or random-fire (inductive loads) output PRODUCT SELECTION Control Voltage 3-32 VDC 90-280 Vrms 18-36 Vrms

AD1010

Contextual Info: PA16PA16 • PA16A • PA16A PA16, PA16A Power Operational Amplifiers FEATURES DESCRIPTION The PA16 and PA16A are wideband, high output current operational amplifiers designed to drive resistive, inductive and capacitive loads. Their complementary “collector output” stage can swing close to the supply

Contextual Info: TD62008APG/AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62008APG,TD62008AFG 7CH DARLINGTON SINK DRIVER The TD62008APG and TD62008AFG are high−voltage, high−current darlington drivers comprised of seven NPN darlington pairs. All units feature integral clamp diodes for switching inductive

PJ 969 diode

Abstract: MP4012 PJ 969
Contextual Info: MP4012 SILICON NPN EPITAXIAL TYPE_ DARLINGTON POWER TRANSISTOR 4 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS _Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2±0-2 LOAD SWITCHING. . Small Package by Full Molding.

mp3007

Contextual Info: MP3007 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 3 IN 1 INDUSTRIA) o HIGH POWER SWITCHING APPLICATIONS, APPLICATIONS Unit in mm o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. FEATURES • Small Package by Full Molding. (SIF 8 Pin)

2N5732

Contextual Info: Inchange Semiconductor Product Specification 2N5732 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High current capability APPLICATIONS ·For linear amplifier and inductive switching applications PINNING see fig.2 PIN DESCRIPTION 1 Base

MJE1320

Contextual Info: Inchange Semiconductor Product Specification MJE1320 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・High voltage ・Low collector saturation voltage APPLICATIONS ・For high-voltage ,power switching in inductive circuits and line operated

UN2003LV

Abstract: UN2003 uln2003 stepper motor ULN-20003 UN2003L driver motor stepper ULN2003 ULN2003 PIN DIAGRAM configuration uln2003 relay ic circuit diagram ULN2000 ULN2003 DRIVER free
Contextual Info: ULN2003LV www.ti.com SLRS059A – APRIL 2012 – REVISED APRIL 2012 7-Channel Relay and Inductive Load Sink Driver Check for Samples: ULN2003LV FEATURES 1 • • • • • • • • • • • • 1 7-Channel High Current Sink Drivers Supports up to 8V Ouput Pull-up Voltage

2n222 TRANSISTOR

Abstract: transistor 2n222 of diode 2n222 1N493 mje5742g mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor
Contextual Info: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*

mje13009g

Abstract: MJE130 2N2222 transistor to drive a relay MJE13009 MJE13009D
Contextual Info: MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,

Resistor 600 ohm 25W

Contextual Info: BVM Series Stackpole Electronics, Inc. Ceramic Housed Vertical Bracket Mount Resistor Features: • • • • • • Resistive Product Solutions Flameproof inorganic construction High temperature potting compound Non-inductive available up to 50Ω RoHS compliant / lead-free

35N04G

Abstract: schematic diagram electrical motor control
Contextual Info: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Exceptional Safe Operating Area