INDIUM 5.7 LT Search Results

circuit diagram of moving LED message display

Abstract: MVL-663UOLK-S
Contextual Info: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps MVL-663UOLK-S Description Package Dimensions The MVL-663UOLK-S , utilizes the latest absorbing Unit: mm ( inches ) φ4.70 (.191) substrate Aluminum Indium Gallium Phosphide 4.7 (.191) (AllnGaP) LED technology. This LED material

MVL-663TUYLK-S

Contextual Info: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps Description MVL-663TUYLK-S Package Dimensions The MVL-663TUYLK-S, utilizes the latest transparent Unit: mm ( inches ) φ4.70 (.191) substrate Aluminum Indium Gallium Phosphide 4.7 (.191) (AllnGaP) LED technology. This LED material

circuit diagram of moving LED message display

Abstract: MVL-663TUOLK-S
Contextual Info: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps MVL-663TUOLK-S Description Package Dimensions The MVL-663TUOLK-S , utilizes the latest transparent Unit: mm ( inches ) φ4.70 (.191) substrate Aluminum Indium Gallium Phosphide (AllnGaP) LED technology. This LED material

MVL-663UYLK-S

Contextual Info: ELLIPSE 4.7 X 5.7 High Performance AllnGaP LED Lamps MVL-663UYLK-S Description Package Dimensions Unit: mm ( inches ) φ4.70 (.191) The MVL-663UYLK-S, utilizes the latest absorbing 4.7 (.191) substrate Aluminum Indium Gallium Phosphide (AllnGaP) LED technology. This LED material

Contextual Info: Y3K SUNLIGHT VISIBLE YELLOW LEDs USD' LEDTRONICS PART NO. 4 C H IP THRU 18 C H IP M U LTIC H IP LEDS LED COLOR 1 S T o p r/ I Tstg 1 , 1 / see \ 1 ^ notes f ABSOLUTE MAX. RATINGS Ta=25’ C Pd mW Ifp mA If mA F ELECTRO-OPTICAL CHARACTERISTICS Ta=25*C Vr V

Contextual Info: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an

G11097-0606S

Abstract: package TO8-16
Contextual Info: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an

Contextual Info: InGaAs area image sensor G12460-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G12460-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an

Contextual Info: InGaAs area image sensor G11097-0606S Image sensor with 64 x 64 pixels developed for two-dimensional infrared imaging The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit ROIC: readout integrated circuit and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an

ECG009

Abstract: C100 MCH185A560JK E4432B 60-000346-000B SS 1091
Contextual Info: PRELIMINARY DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz

9-GHz

Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
Contextual Info: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz

ROHM SOT89 MARKING

Abstract: ECG009B-1000 ECG009 311 SOT89
Contextual Info: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features „ Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz

M68EZ328ADS

Abstract: heart beat monitor pc lcd interface microtek service manual 68EZ328 application for lcyp 68EC000 MAX1249 MAX723 MC68681 MC68EZ328
Contextual Info: Motorola, Inc. M68EZ328ADS Application Development System User’s Manual Revision 1.0 Nov 14, 1997 Motorola reserves the right to make changes without further notice to any product herein to improve reliability, function, or design. Motorola does not assume any liability arising out of the application or

deuterium lamp l2524-01

Abstract: deuterium lamp circuit
Contextual Info: Xenon lamp, Xenon flash lamp, Mercury-Xenon lamp, Deuterium lamp and Hollow cathode lamp Long Life High Stability L I G H T S O U R C E CONTENTS Selection guide by applications Product introduction by application . 3 Light measurement technology is utilized in many

CSNC241-500

Abstract: 2455r CSLH3A45 TD5A CSNC241 AWM700 CSNE151-100 3455rm 2455rbv 2455RM
Contextual Info: Commercial Switches and Sensors Pressure Mass Airflow Force Humidity Product solutions on the Interactive Catalogue Temperature - RTDs Temperature - Thermistors Temperature - Probes Thermostats - Commercial Thermostats - Precision Heaters Combi-sensor Thermal Cutoffs

STM8T143

Abstract: ufdfpn8 footprint ufdfpn8 pcb footprint STM8T142 MARKING 54 dongle bluetooth stm8t st an2869 91/157/AET
Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Features • Touch and short range proximity detection ■ Internal sampling capacitor ■ On-chip integrated voltage regulator ■ Automatic electrode tuning AET ■ Electrode parasitic capacitance compensation

ufdfpn8 footprint

Abstract: ufdfpn8 pcb footprint ufdfpn8 thermal resistance marking XN 8pin STM8T143 dongle bluetooth STM8T143AM62T 91/157/AET
Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet −production data Features • Touch and short range proximity detection ■ Internal sampling capacitor ■ On-chip integrated voltage regulator ■ Automatic electrode tuning AET

91/157/AET

Abstract: ufdfpn8 footprint
Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet −production data Features • Touch and short range proximity detection ■ Internal sampling capacitor ■ On-chip integrated voltage regulator ■ Automatic electrode tuning AET

atmel 524 8 pin

Abstract: QTAN00
Contextual Info: Atmel AT42QT1060 Six-channel QTouch Touch Sensor IC DATASHEET Features  Configurations:  Can be configured as a combination of keys and input/output lines  Number of QTouch® Keys:  Two to six  Number of I/O Lines:  Seven, configurable for input or output, with PWM control for LED driving

91/157/AET

Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data • Ear-head detection for MP3/walkman ear buds and Bluetooth headsets • On/off touch sensing button such as GPS system home button • User hands detection for mouse/keyboards

ufdfpn8 footprint

Abstract: dfn8 tray ufdfpn8 ufdfpn8 thermal resistance 91/157/AET
Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8

91/157/AET

Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8

Contextual Info: AN11267 EMC and system level ESD design guidelines for LCD drivers Rev. 1 — 11 February 2013 Application note Document information Info Content Keywords LCD, LCD driver, COG, Chip-On-Glass, EMC, EMI, ESD, Electro Magnetic Compatibility, Electro Magnetic Interference, Electrostatic

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The