IN 963 B ZENER DIODE Search Results

1N963B

Abstract: MARKING 182 DO-35 zener diode IN 963 B zener diode
Contextual Info: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200

1N1318

Abstract: 1N1323 zener diode 1N961 1N1313 1N1356 IN946 1N938 1N939 1N957 1N958
Contextual Info: z z z zHoí Hzoí zHoi hOz ' rOzi' hzO ' H H H CO 9 O CO CO ^ O l O ' 01 r-i CM CO ^ ^ ^ 5 S S W V I cm ooo H Hró inrl cm cm co ooo ooo ooo ooo CO CO fO co co *5 150m w 10 watt Suffix A = 5% No Suffix z_ 10% Suffix A = 5% Suffix R = Rev. Polarity Diode typos presently available from Microsemi Corporation are shown in bold type.

Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array Pb GREEN RoHS Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of

Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of

1N958 zener diode

Abstract: zener diode 1N961 1N965 zener diode 1N1313 IN946 1N938 1N939 1N957 1N958 diode zener 1N985
Contextual Info: O l O ' 01 z z z H H H 5 5 5 5 S S CO 9 O r-i CM CO W V CO CO ^ ^ ^ ^ oí oí oi O ' O ' O ' z z z z z z H H h ri h Diode i 0.20 0.80 0.68 0.65 o o o OOO o o o in in in 500.0 500.0 500.0 125.0 150.0 185.0 230.0 270.0 330.0 400.0 500.0 750.0 900.0 1100.0

IN973b

Abstract: 1N4370A IN746A IN967B 1N892 IN4372 IN992 1N744 IN970B 1N857
Contextual Info: S^C D 1 . 7 ^ 2 3 7 S G S —THOMSON . O : T H O M S O N -C S F ' i - Z — 1 N 9 5 7 B DIVISION SEMICQNDUCTEUBS— 59C aü02m5 02415 — i 1 N 9 9 2 B ZENER DIODES DIODES ZENER P to t = 400 m W 6Æ V< VCTnom < 200V 400 mW hermetically sealed glass silicon Zener

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Pinout Features *SP1001-02 (SC70-3) *SP1001-04 (SC70-5) 1 1 5 3 2 4 SP1001-04 (SOT 553) 2 3 1 6 NC 2

HE MARKING SC70-5

Abstract: SP1001-05VTG
Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Pinout Features *SP1001-02 (SC70-3) *SP1001-04 (SC70-5) 1 1 5 3 2 4 5 2 3 1 6 NC 2 5 2 3 4 NC *SP1001-05

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1001 Series SP1001 Series - 8pF 15kV Unidirectional TVS Array RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of

semiconductor band color code

Abstract: 1n960b fairchild 1N965B 1N991B 1N967B 1N957B
Contextual Info: Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Value 500 Units mW 4.0 mW/°C -65 to +200 °C Derate above 75°C

1N957B

Abstract: 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N991B
Contextual Info: Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Value 500 Units mW 4.0 mW/°C -65 to +200 °C Derate above 75°C

sst211 sot-143

Contextual Info: FAST DMOS FET Switches N-Channel Enhancement-Mode caloric CO RP O RA TIO N \J SST211/ SST213/SST215 FEATURES DESCRIPTION • • • • • Designed for audio, video and high frequency applications, the SST211 Series is a high speed, ultra low capacitance

gs 05 24 gd 2

Abstract: SST211 SST213
Contextual Info: FAST DMOS FET Switches N-Channel Enhancement-Mode C Q IO O IC \J CORPORATION SST211 /SST213/SST215 DESCRIPTION FEATURES • • • • • High Speed Switching. t d O N 1ns Low C apacitance. 2.4pF typical

Contextual Info: WENRUN OPTOELECTRONIC CO., LTD. Technical Data Sheet LED Lamps •Customer: Technical Data Sheet PN: L□963□□ Series For: IF=20mA Contents 1.Features 2.Descriptions 3.Applications 4.Selection guide 5.Package dimensions 6.Absolute maximum rating 7.Electrical optical characteristics

Contextual Info: SENITRON INDUSTRIES LTD 43E D • 013766^ QQQ01SQ 0 H S L C B T - n - z 3 SERIES L Transient Voltage Suppressor ■ Glass Passivated Junction Voltage Range 6.5 to 90 Volts ■ 1.5kW Peak Pulse Power 1.0 Watt Steady State ■ Low Capacitance PEAK POWER DERATING CURVE

1N series ZENER DIODE 5 to 10 volt watt

Abstract: 1n2007 diode 1N2621 IN2049 zener diode 1N961 939B IN2806 in825 IN946 1N938
Contextual Info: 5 5 5 5 S S CO 9 O r-i CM CO W V CO CO ^ ^ ^ ^ O l O ' 01 z z z H H oí oí oi O ' O ' O ' z z z z z z H H H h ri h i o o o OOO o o o in in in 500.0 500.0 500.0 125.0 150.0 185.0 230.0 270.0 330.0 400.0 500.0 750.0 900.0 1100.0 1500.0 1700.0 2200.0 2500.0

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

diode 1n3433

Abstract: JANTX 1N3611 microsemi zener diode 1N961 1N3584 IN946 in960 zener diode 1N938 1N939 1N957 1N958
Contextual Info: 5 5 5 CO 9 O CO CO ^ O l O ' 01 z z z H H r-i CM CO ^ ^ ^ oí oí oi 5 S S W V z z z z z z H H H h ri h O' O' O' i CM C\j C\j cm cm co o o o OOO o o o in in in o o o 150.0 150.0 150.0 , 1 125.0 150.0 185.0 230.0 270.0 330.0 400.0 500.0 750.0 900.0 1100.0

transistor sd 965

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard ievel FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

30n20

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance

zener diode 1N PH 48

Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used: