IN 418 Search Results

Contextual Info: 16.44 in 418 mm 19.00 in 483 mm .23 in 6 mm 18.38 in 467 mm 1.72 in 44 mm .50 in 13 mm 1.25 in 32 mm 4X O 0.25 in X 044 in [6 mm X 11 mm] SLOT .52 in 13 mm PITCH 1.66 in 42 mm 13.90 in 353 mm 15.68 in 398 mm O 0.31 in X 1.25 in [8 mm X 32 mm] SLOT, TYP Data subject to change without notice. Isometric drawing not to scale.

Contextual Info: SHEET 1 OF 1 17.96 [.707 in] R.25 [.010 in] 29.36 [1.156 in] 23.80 [.937 in] 10.62 [.418 in] 6.98 [.275 in] 23.80 [.937 in] n2.39 [.094 in] PANEL MOUNTING SWITCH FUNCTION ISOMETRIC POS. 1 POS. 2 POS. 3 ON OFF ON 2-3, 5-6, 8-9 OPEN 2-1, 5-4, 8-7 7.87 [.310 in]

Contextual Info: 23.80 [.937 in] SHEET 1 OF 1 10.62 [.418 in] 23.80 [.937 in] n2.39 [.094 in] 17.96 [.707 in] n2.39 [.094 in] PANEL MOUNTING 6.98 [.275 in] 9.27 [.365 in] SWITCH FUNCTION POS. 1 POS. 2 29.36 [1.156 in] POS. 3 ON OFF ON 2-3, 5-6, 8-9, 11-12 OPEN 2-1, 5-4, 8-7, 11-10

MPT1340

Abstract: MPT 1340 EN45002 MPT 1340 wt wireless microphone receivers and transmitters EN4500
Contextual Info: MPT 1340 PERFORMANCE SPECIFICATION Transmitters and receivers for use in telemetry, telecommand and in-building security equipment operating in the frequency band 417.900 MHz to 418.100 MHz and in-vehicle equipment including radio keys in the frequency band

AA138

Abstract: germanium point contact diode tfk 138 Germanium Diode aa138 diode aa138 "Point Contact Diode" diode tfk TFK diode Germanium Diode tfk Germanium diode IV
Contextual Info: € 1 » AA 138 'W Germanium-Spitzendiode Germanium point contact diode Anwendungen: Demodulatorschaltungen in FS-Geräten Applications: Demodulator circuits in TV receivers Abmessungen in mm Dimensions in mm Œ Absolute Grenzdaten Normgehäuse Case 5 1 A 2 IN 41880

BA124 Diode

Abstract: BA124
Contextual Info: BA 124 Silizium-Kapazitäts-Diode Silicon capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Turiern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm 02,6 Cl 5 117 0 0,55 I Normgehäuse Case 5 1 A 2 IN 41880 JEDEC DO 7

BAV74

Abstract: DIN 3015
Contextual Info: BAV74 Silicon planar twin-diode The silicon planar tw in -d io d e BAV 74 in the minature plastic case 23 A 3 IN 41869 S O T -23 is suitable fo r use as high-speed s w itch in g diode in film circuits. The diode is coded JA. The stated data apply fo r any diode system, unless otherw ise

A22E

Abstract: a22t mk40 A22EL-M A22-3210
Contextual Info: Emergency Stop Switch A22E Install in 22-dia. or 25-dia. Panel Cutout Positive opening mechanism with minimum contact separation of 3 mm in accordance with EN60947-5-1, → . only for NC contacts Safety lock mechanism prevents misuse. (No tampering – in accordance with EN 418)

transistor d 1933

Contextual Info: 2SC D • ñE3SbQS Q0045CH b H S I E NPN Silicon RF Transistor G| SIEMENS AKTIENGESELLSCHAF : 0^509 -2 A BF 505 0 - BF 5 0 5 is an NPN silicon planar RF transistor in TO 9 2 plastic package 10 A 3 D IN 41868 . The transistor is particularly intended for use in V H F amplifiers in common emitter configuratin, VH F mixers and VHF/UHF oscillators.

SOCKET HEAD CAP SCREWS DIMENSION DIAGRAM

Abstract: A22E A22Z-B101Y A22Z-B10 A22-12 A22EL-M-24A-11 A22L-01M-T2 a22l BA9S spst Pushbutton
Contextual Info: Emergency Stop Switch A22E Install in 22-dia. or 25-dia. Panel Cutout • Direct opening mechanism with minimum contact separation of 3 mm in accordance with EN60947-51, Æ . only for NC contacts • Safety lock mechanism prevents misuse. (No tampering – in accordance with EN 418)

A22E

Abstract: g307 G306 EN60947-5-1 A22Z-B10
Contextual Info: Emergency Stop Switch A22E Install in 22-dia. or 25-dia. Panel Cutout • Direct opening mechanism with minimum contact separation of 3 mm in accordance with EN60947-5-1, Æ . only for NC contacts • Safety lock mechanism prevents misuse. (No tampering – in accordance with EN 418)

36-UNS-2A

Abstract: JG-120
Contextual Info: REV. NC -14.10 [.556] — -3.81 DATE D E S C R IP T IO N 05/10/01 INITIAL R EL EA SE [ . 150] >—10,60 [.418]1.65 [.0 6 5 ]-1 6.00 [.6 3 0 ]-12.20 [ 4 8 1 ]. •«- o in o to uS E -1 in CD in ■—1 m 1 6.00 [ .2 3 7 ] -I o *— in o T— CD 02.6 [0.1 03] 2x

Transistor BFT 99

Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
Contextual Info: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 IN 41869 , intended for use in low-noise input and intermediate stages in RF

Contextual Info: REV. DATE NC 11/ 0 3 / 0 3 DESCRIPTION INITIAL RELEASE -14.10 [.555]-10.60 [.418]- ro <• ■^h cn ò -.96 [.038] o O ^ J PCB MOUNTING HOLES c\i o ^ p CO ^ O o UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN MILLIMETERS. DIMENSIONS IN [ ] ARE IN INCHES AND FOR CUSTOMER REFERANCE ONLY.

1456RL3

Contextual Info: 8 7 6 5 6.35 mm [0.250 in] D 3.18 mm [0.125 in] 430.21 mm [16.938 in] 27.78 mm [1.094 in] 76.20 mm [3.000 in] 4 133.35 mm [5.250 in] 22.23 mm [0.875 in] 5 mm 160.105 in] [6.3 15.0° 46.81 mm [1.843 in] 34.13 mm [1.344 in] R3.07 mm 5X [0.121 in] 137.90 mm [5.429 in]

Struthers-Dunn

Abstract: 418AXXL-120VAC
Contextual Info: Struthers-Dunn 407 East Smith Street - Suite B Timmonsville, SC 29161 US Phone: 843 346-4427 • Fax: (843) 346-4465 E-Mail: info@struthers-dunn.com • Web site:www.struthers-dunn.com 418 Series Traffic Control Relay The 418 hybrid relay is designed as a drop-in replacement for mercury relays used in traffic cabinets ONLY. Now being installed in new

BDY39

Abstract: TRANSISTOR L 287 A TCA 290 BDY39-4 BDY39-6 Q62901-B11-A Q62901-B50
Contextual Info: BDY39 NPN Transistor for high-power AF output stages The BD Y 39 is a single diffused NPN silicon transistor in a case 3 A 2 IN 41872 sim. TO -3 . The collector is electrically connected to the case. The transistor is especially designed for use in high-power A F output stages and in stabilized power

bfy90

Abstract: BFy 90 transistor DIN 41876 bfy 90
Contextual Info: BFY90 NPN Transistor for antenna amplifiers B FY 90 is an epitaxial N P N silicon planar RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general application up into the G Hz range, e.g. in antenna and RF amplifiers.

transistor 926

Abstract: pnp vhf transistor
Contextual Info: . I ESC D • SEBShOS 0004554 0 H S I E 6 7= 7 / - / 7 BF 926 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF °455^-— 0 BF 926 is an epitaxial PNP silicon planar transistor in TO 92 plastic package 10 A 3 IN 41868 . The transistor is intended for use in VHF oscillator stages, in particular for

418AXXL-120VAC

Contextual Info: Struthers-Dunn 407 East Smith Street - Suite B Timmonsville, SC 29161 US Phone: 843 346-4427 • Fax: (843) 346-4465 E-Mail: info@struthers-dunn.com • Web site:www.struthers-dunn.com 418 Series Traffic Control Relay The 418 hybrid relay is designed as a drop-in replacement for mercury relays used in traffic cabinets ONLY. Now being installed in new

2f5 transistor

Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Contextual Info: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 IN 41869 , intended fo r use in low-noise input and intermediate stages in RF

MERCURY RELAYS

Contextual Info: Struthers-Dunn 407 East Smith Street - Suite B Timmonsville, SC 29161 US Phone: 843 346-4427 • Fax: (843) 346-4465 E-Mail: info@struthers-dunn.com • Web site:www.struthers-dunn.com 418 Series Traffic Control Relay The 418 hybrid relay is designed as a drop-in replacement for mercury relays used in traffic cabinets ONLY. Now being installed in new

1456RH3

Contextual Info: 8 7 6 5 6.35 mm [0.250 in] 3.18 mm [0.125 in] D 27.78 mm [1.094 in] 4 430.21 mm [16.938 in] 57.15 mm [2.250 in] 22.23 mm [0.875 in] 76.20 mm [3.000 in] DETAIL A A m 75 m 159. 89 in] [6.2 30.20 mm 15.0° [1.189 in] 46.81 mm [1.843 in] 34.13 mm [1.344 in] 430.71 mm

TRANSISTOR BO 346

Abstract: BFX89 case BFX89 Power Transisitor 100V 2A Q62702-F296
Contextual Info: B FX89 NPN Transistor for antenna amplifiers B F X 89 is an epitaxial N P N silicon RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general applications and, for instance, for use in antenna and RF amplifiers up into the GHz