IMX 117 Search Results

Contextual Info: IMX70, IMY70 Series Data Sheet 70 to 90 Watt DC-DC Converters Features • RoHS compliant for all six substances • Extremely wide input voltage ranges up to 154 VDC • 1 or 2 outputs up to 48 V • Basic insulation: IMX models • Class I equipment with reinforced insulation: IMY models

Contextual Info: IMX70, IMY70 Series Data Sheet 70 to 90 Watt DC-DC Converters Features • RoHS compliant for all six substances • Extremely wide input voltage ranges up to 154 VDC • 1 or 2 outputs up to 48 V • Basic insulation: IMX models • Class I equipment with reinforced insulation: IMY models

peters SL1301

Contextual Info: IMX70, IMY70 Series Data Sheet 70 to 90 Watt DC-DC Converters Features • RoHS compliant for all six substances • Extremely wide input voltage ranges up to 154 VDC • 1 or 2 outputs up to 48 V • Basic insulation: IMX models • Class I equipment with reinforced insulation: IMY models

EFD25

Abstract: Manutech EFD20 EFD30 EFD15 MN650
Contextual Info: EFD, Standard Custom Packages M N650 •660|U *74rrm MAX L EFD 15 .340 |6.64 m m ) IMX. .870122.1 ürrm ) |2 4 .6 4 r m |- * . r.vvx. T r.vof. EFD 20 ) ^ J 2 0 |ia 6 7 m m | MAX. EFD 20 TTTT Appl i cat i ons C EFD 25 1 ) tS30113w4^rm) MAX. r — y ••1,3 A0

TRANSISTOR C 6090

Abstract: TRANSISTOR C 6090 EQUIVALENT k 4110 C 6090 M 2 N 50 60 fft algorithm 1024-Point block diagram OF pentium 2 me 6100 butterfly "bit reverse"
Contextual Info: CHAPTER 12 The Fast Fourier Transform There are several ways to calculate the Discrete Fourier Transform DFT , such as solving simultaneous linear equations or the correlation method described in Chapter 8. The Fast Fourier Transform (FFT) is another method for calculating the DFT. While it produces the same

eev limiter

Abstract: RC6516 RC6516V
Contextual Info: www.fairchildsemi.com RC6516 IF Demodulator for Vestigial Side Band Receivers Features Demodulates 16 level to 2 level VSB signals Versatile delayed AGC & Tuner Controls 60dB Gain from IF to baseband 45dB AGC range with a digital control <1% distortion @ 2 Vpp baseband output

dc05 7 segments

Abstract: RAS 0510 SUN HOLD sun hold RAS 0510 dc05 display display dc05 arm processor features Display 7 segment DC05 sun hold RAS 0610 BS17 dc05 7 DISPLAY segments
Contextual Info: TMS320DSC24 Digital Multimedia Processor Technical Reference Manual Version 1 Literature Number: SPRU574 November 2002 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

TMS320DSC24

Abstract: SPRU574 DSC24 IRQ110 imx 178
Contextual Info: TMS320DSC24 GHK Designed for Digital Multimedia Processing Data Manual June 2002 Digital Media SPRS195 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

IC60H

Abstract: SEA9NTB2504 SEA9BN24TN A9D11806 merlin gerin isobar 4c A9F54350 DB118787 SEA9AN10PS Vigi iC60 advantages of earth leakage circuit breaker
Contextual Info: Low voltage Acti 9 the efficiency you deserve Catalogue 2013 Acti 9 The safest, simplest and most efficient system for power distribution solutions Protection devices > Miniature circuit breaker > Residual current circuit breaker > Vigi residual current devices

Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC6516 IF D e m o d u l a t o r f or V e s t i g i a l Si de Ba n d R e c e i v e r s Features Demodulates 16 level to 2 level VSB signals Versatile delayed AGC & Tuner Controls

QFN24

Abstract: 8 fach N-Kanal FET transistor TE 901 EN10 G003 G008 transistor pfad
Contextual Info: iC-MFN 8-FOLD FAIL-SAFE N-FET DRIVER Ausgabe A2, Seite 1/13 EIGENSCHAFTEN ANWENDUNGEN ♦ 8-fach Level-Shifter auf bis zu 40 V Ausgangsspannung ♦ Eingänge kompatibel zu TTL- und CMOS-Pegeln, spannungsfest bis 40 V ♦ Spannungshub der Ausgänge einstellbar auf 5 V, 10 V oder

IC60H

Abstract: CA907021 IC60N C CURVE A9F44220 IC60N 1P N SEA9BN24TN A9C32811 merlin gerin RCBO A9C64216 telemecanique contactor catalogue
Contextual Info: Low voltage Acti 9 the efficiency you deserve Catalogue 2013 Acti 9 The safest, simplest and most efficient system for power distribution solutions Protection devices > Miniature circuit breaker > Residual current circuit breaker > Vigi residual current devices

EN10

Abstract: G003 G008 4 bis 20 mA stromquelle
Contextual Info: iC-MFP 8-FOLD FAIL-SAFE P-FET DRIVER Ausgabe A2, Seite 1/14 EIGENSCHAFTEN ANWENDUNGEN ♦ 8-fach Level-Shifter auf bis zu 40 V Ausgangsspannung ♦ Eingänge kompatibel zu TTL- und CMOS-Pegeln, spannungsfest bis 40 V ♦ Spannungshub der Ausgänge einstellbar auf 5 V, 10 V oder

EN10

Abstract: G003 SMD TRANSISTOR mark 24 39
Contextual Info: iC-MFP 8-FOLD FAIL-SAFE P-FET DRIVER Rev A2, Page 1/13 FEATURES APPLICATIONS ♦ 8-fold level shift up to 40 V output voltage ♦ Inputs compatible with TTL and CMOS levels, 40 V voltage proof ♦ Voltage swing configurable to 5 V, 10 V or supply voltage ♦ Short-circuit-proof push-pull current sources for driving FETs

tt 6093

Abstract: 2SC4422 c40l 10DIV ic 8123
Contextual Info: HITACHI 2SC4422-SILICON NPN EPITAXIAL VHF/UHF WIDË BAND AMPLIFIER . 3im*» t-i ! _ LXJ1 „ i, û I S .i \ i üj« r > Eoticlu coûtai# : -i. r t$— n ~ j 3 lï DiiWnucio in lYiml ' (UPAK MAXIMUM COLLECTOR DISSIPATION ABSOLUTE M AXIM UM RATINGS <Ta=25*C)

XORB 48

Abstract: xorb48 CLR45 ir417 ISO000 Z8000 SDL41 Dynamic arithmetic shift Dst 413
Contextual Info: Advanced Micro Computers Distributed by Advanced Micro Devices ¡HI Am96/4016-ASM Evaluation Board Assembler User’s Manual $5.00 REVISION RECORD REVISION 01 DESCRIPTION Preliminary Issue 9/21/79 A Manual Released (11/21/79) Publication No. 00680138 Address comments concerning

MIL-STD-1750

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added device type 04. Technical changes were implemented. Editorial changes throughout. 92-05-06 Monica L. Poelking B Added device types 05, 06, and 07. Technical changes to table I. Editorial changes throughout.

ISO 2768 fH

Abstract: st smd diode marking code G11 marking code 1BL Diode DX-66 MIL-STD-1750* BX 1BL o.h Diode MIL-STD-1750 P1750A performance bz 148 diode JJ SMD diode a8
Contextual Info: REVISIONS LTR DATE Y8-H0-DA DESCRIPTION APPROVED Added device type 04. Technical changes were implemented. Editorial changes throughout. 92-05-06 Monica L. Poelking Added device types 05, 06, and 07. Technical changes to table I. Editorial changes throughout.

ADOP07CR-REEL

Abstract: 0p07 ADOP07H OP07 to99 ADOP-07CR a2kl ADOP07DH adop07 ADOP-07CH OP07S
Contextual Info: analog DEVICES INC ANALOG DEVICES SI E II • OOlbaOD 003L333 31411 ANA -r-73-aé-i Ultralow Offset _ Voltage Op Amp AD 0P-07 FEATURES Ultralow Offset Voltage: 10|iV Ultralow Offset Voltage Drift: 0.2|jiV/°C Ultrastable vs. Time: 0.2|i.V/°C

GMM7322010BN

Abstract: ddgt GMM7322 gmm7322010b
Contextual Info: WB @ Semicon. Co. LTD Description Features . . .The.GMM7322Q.1D.BNSZS.GJsuin.2MjL.22. bits Dynamic RAM MODULE w hich is assembled 4 pieces o f 1M x 16bit EDO DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7322010BNS/SG is

Contextual Info: O 73 O 5-= i 3 3 oS to n i a a * 4-25 b-1 m o c r < r a r o m 5 5'» N5'3 m r o — > > a 5' § — j > g j5 ; ok o c > o N -j ru z a o L n ru •o c H z o 0 3 LU t-* o> 30 a 5 in - C O y ) ro f° ^ - Ü MOTOROLA SC IME 0 | b 3 b 7 2 S 2 0002050 7 | LOGIC

Contextual Info: » « Y U N D A I • HYM5V64224C R-Series 2 Banks X 2M X 4 Bit Synchronous DRAM GENERAL DESCRIPTION Th e H Y M 5V 64224C R -Series is a 2Mx64-bit Extended Data Out mode C M O S DRAM module consisting of eight H Y 51 V 18 16 4C in 42 pin S O J or 44/50 pin T S O P -II and one 2048 bit E E P R O M on a 168 pin glassepoxy printed circuit board. 0.01 |a F and 0.1 ¡xF decoupling capacitors are mounted for each DRAM .

TRANSISTOR C 1177

Contextual Info: MTC-3200 HBIMOS Standard Cell Library Services BICMOS Family Features • Technology: DMOS, BIPOLAR and CMOS 3|i channel length, silicon g ate, single poly, double m etal, w ith compacted interconnect design rules • Typical G ate Delay: 2 .5 ns VM* 15V

MC10H181

Abstract: MC1672
Contextual Info: B PIN ASSIGNMENT oi ÿ J J i 'è S Z 2 n n n n n n n n < in i i i i i c s s i 350 270 1 Z M m i i i i i i i i i c i c <0 C X X C C at ^ in o o> o j evi o i o i o> oi CO oi I I I O) O ^ 9 r N N N I i i m oi OJ oi i I <- CN CO CO evi CN CM* eg fx. CN CN i I I i