IH 13001 Search Results

B0J0

Abstract: LAVDH msu1 12-2 PMC-2021098
Contextual Info: 5: 03 AM TUPP 2488 ASSP Telecom Standard Product Data Sheet Released es da y, 09 Oc to TUPP™ 2488 be r, 20 07 04 :2 PM5364 Data Sheet Released Issue No. 7: August 2004 Do wn lo ad ed by IH S Pa r ts Ma na g em en tI nc .o fI HS IN C on Tu SONET/SDH Tributary Unit Payload

13001 LZ

Abstract: SR 13001 PA 13001
Contextual Info: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh

RV55F

Abstract: RX110F TL 650 ht FRX90V 1206R 93AE 93AG MICROSMDC bimetal fuse FSMD010-1206
Contextual Info: CONTENTS I- OVERVIEW COMPANY PROFILE FUZETEC  PRODUCT FAMILY SAFETY, QUALITY AND CUSTOMER SATISFACTION TECHNOLOGY NICHE II- FUNDAMENTAL HOW DOES THE RESETTABLE FUSE WORK TRIP CURRENT, HOLD CURRENT AND THERMAL DERATING III- PRODUCT PRODUCT SUMMARY FRX FRK

7006C

Abstract: TOA8
Contextual Info: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: MICRON SEMICOND UCT OR INC bTE D • b l l l S M 11! DDÜTTbö 7ÖT ■ MRN M ir D H M 1 semiconductor inc. MT4C16256/7 256K X 16 DRAM 2 5 6 K X 16 DRAM DRAM FAST PAGE MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

MT4C16256DJ-7

Contextual Info: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*

MT4C16270DJ-7

Contextual Info: MICPON SFM JCONDUCTOR INC L.1E D • b 11 IS 4 e} DDDTìSB 2ST MflRN M IC R O N I MT4C16270 256K X 16 DRAM SEUiCOhOkJCTOH, INC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: '993 Tí* PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON I SCHICONDUCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc [ 1 DOl [ 2 D02 E 3 D03 E 4 004 [ 5 • Write Cycle Access _ BYTE or WORD via WE

Contextual Info: M ICRON SEM ICONDUCTOR INC b 'iE D m b i l l 5 HT G D G cì cì f i 3 B i MRN MT4C16256/7 L 256K X 16 DRAM MICRON I TTh SEPiCO ND'J CIO FiU JC. 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages

MB81417

Abstract: marking 10-16
Contextual Info: FEB i 6 1993 August 1992 Edition 2.0A fu J it su — DATASHEET MB814170A-70/-80/-10 CMOS 256K x 16 Bits Fast Page Mode Dynamic RAM The Fujitsu M B 814170A is a fully decoded C M O S Dynamic RAM D R A M that contains 4 ,1 9 4 ,3 0 4 memory cells accessible in 16- or 8-bit increments. The M B 814 1 70A features a

LVDS 51 connector

Abstract: PLL130-01
Contextual Info: Preliminary for proposal PLL130-01 High Speed Buffer for LVDS and PECL FEATURES Selectable PECL or LVDS outputs Single AC coupled input 100mV swing . Input range from DC to 1.3 GHz. Output Enable selector. 3.3V operation. Available in 16-Pin (SOIC or TSSOP).

Contextual Info: n i CR ON S E M I C O N D U C T O R IN b3E D • blllS^ OOOflbTb 11b ■ MICRON I k m ,c o n d u c t o » « c NRN M T 4C 16256/7/8/9 L 256K X 16 W ID ED R A M WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions

Contextual Info: ADVANCE M IC R O N 1 MT4LG16257 S 256K DRAM DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply*

Contextual Info: m . i s MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON • ««ICOHOliCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply*

Contextual Info: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve

Contextual Info: MOTOROLA H SEMICONDUCTOR TECHNICAL DATA MC54/74HC4514 1 -o f-1 6 D e c o d e r/D e m u ltip le x e r w ith A dd ress Latch High-Performance Silicon-Gate CMOS The MC54/74HC4514 is identical in pinout to the MC14514B metal-gate CMOS device. The device inputs are compatible w ith standard CMOS outputs; w ith pullup

13002

Abstract: HB 541 X810 MIL-T-10727 c s x 13001 H 08
Contextual Info: -f l O — no - - sqs Series 800 Vert¡sockets" Vertical Mounting with Bifurcated Contacts FEATURES: • Aries offers a full line of Vertisockets for DIP packaging of LEDs, incandescent lamps, DIP switches, test points, etc.

MT4C16257

Abstract: MT4C16256DJ-7 MT4C1625
Contextual Info: ADVANCE M T4C 16256/7/8/9 L 256K X 16 DRAM M IC R O N DRAM 256K x 16 DRAM g LOW POWER, EXTENDED REFRESH < FEATURES • Industry standard xl6 pinouts, tim ing, functions and packages • High-perform ance, CMOS silicon-gate process • Single +5V ±10% pow er supply

Contextual Info: RPR 1 1993 PRELIMINARY M IC P D N I 1 IW = ! » T M T 4 0 1 6 2 5 6 /7/8 /9 S 2 5 6 K X 16 W ID E D R A M WIDE DRAM 256K x 16 DRAM FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc I 1 DQ1 I 2 D 02 [ 3 DQ3 [ 4 DQ4 C S Vcc DQ5 DQ6 DQ7 DOS

Contextual Info: E N - 0 2 J O 9 7 MX J- 54 g0S°b0Q-b6gl s-as^ t75-PXlA| A60)r30-N 3 a "NOISSINddd N d llld M in O H U M OdSn 39 ION OinOHS ONV OdlVdOddOONI X310IAI 01 A d V ld ld dO dd SI 1VH1 NOIlVWdOdNI SNIV1N00 ONIMVdO SIH1 3ZIS G JO G t70 0 —t7GoI S _OS 11VH3 X d lO H

Contextual Info: AMP Kabelschuhe und Verbinder Verarbeitungswerkzeuge, Service-Sortimente AMP Terminals and Splices Application Tooling, Service Kits AM P AMP PIDG AMP P/DG Ringzungen, 0,1—6,6 mm2 Ring Tongues, 0.1—6.6 mm2 Kabelschuhmaterial: Cu, verzinnt Terminal Material:

Contextual Info: Date:- 03 August 2012 Data Sheet Issue:- K1 Phase Control Thyristor Types N0335SC120 to N0335SC160 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 1200-1600 V VDSM Non-repetitive peak off-state voltage, (note 1)

abe 810

Abstract: CS thyristor cs 6 f0023 abb thyristor 500AC CS thyristor cs 5-10 CS 630 F CS 661-32 130238 0/abe 810
Contextual Info: A S E A BROWN/ ABB A3 SEMI CON Netzthyristoren Thyristor Typ/type * 0 0 4 ñ 3 0 fi 0 0 0 0 1 7 5 Phase control thyristors Vr r m •t r m s h w i/Tc hvwM Tc = 85°C V A v drm D I A/°C A •t s m Ovjm 8,3 ms A 10 ms A ft 10 ms) TVJS45°C tvjm A 2S AJS

Contextual Info: Date:- 03 August 2012 Data Sheet Issue:- K1 Phase Control Thyristor Types N0180SH120 to N0180SH160 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1 1200-1600 V VDSM Non-repetitive peak off-state voltage, (note 1)