IH 0565 R Search Results

Contextual Info: 5*—S>• £/—h CompoundTransistor G A I L4M MNPNi n V=l> ftwmmi : a mm 2.1 ±0.1 R ! = O G N 1L4M 47 k Q , R 2= 47 k £2 ) 1.25 ± 0 . 1 t ^ > y j / > 9 ') i f 0 * f e * b R * Æ t e ( T a = 25 °C ) « B 3 lx ^ ^ ^ pR^ «& }_{£ # fë 5e iî # z ^CBO

BA1A4P

Abstract: T108 02-WM RSL AH transistorBA1A4P
Contextual Info: r NEC i? f/ \ T A 5 ? — 57 • 5 /— b Compound Transistor BA1A4P ¡g N P N j : t ? ? * '> T JU S fe t # l 3 V V=7> i> X ? it '• mm) ★ Ri = 10 kQ, R2= 47 kQ) o BN1A4P T è t ~t0 lfe;ki*^#(Ta = 25 °C) II n u s ? 9 ?T 3 W ± . v i ; 7 y 3 u 3 ^ ^ ^

AI820

Abstract: 5886a ah506 AA1F4M l0422 PA33 T108 332I transistor et 454 TC-5886A
Contextual Info: SEC i ï f / \ Y r 7 •J- ^ . C /-a - ê - h =7 V C o m p o u n d T ra n s is to r AA1 F4M ÎfiÎÆ F *3Ü cN P N xt°^41'> 7 '^ i f é ^ ,J 4# Y:7 > i > 7 . 9 i . mm, i t R i = 22 k Q , R 2= 22 k Q o AN1F4M t =t > ~7° 'J / > ? ij Ttë t l i t c

2SA1608

Abstract: 2SC4173
Contextual Info: NEC j m^Tfvrx A Silicon T ran sisto r _ 2SC4173 N P N ih N PN Silicon Epitaxial T ra n sisto r Audio Frequency A m p lifie r and Switching # i t O ftg | mii i t i 1 , X 't -y - f > 7", • &)§ iSigipM Ù ¿1a S t t c f if f l- C 'è 4" 11] i t o

la 5531

Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
Contextual Info: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£

xeh 250 120

Abstract: T108 TC-6056 UUJK
Contextual Info: 5 ; . = /— 1^. ~J— NEC m Com pound Transistor FAI L4Z ty - ÌV - • m m $ f t o^qrxffi^^lLtv^tc ( R x= 4 7 2.8 + 0.2 0.651 1.5 kQ) O E o F N 1 L 4 Z =? > 7 ° t (T a Il U / = > 9 ]) X i t m T ' è £-?< 25 °C ) h& ^r # Se VcBO te 60 V Marking Z JU 9 9 ' ^ - l " / 9 f f J M E

2SA1156

Abstract: TC-5548A T108 im0552
Contextual Info: — ~t NEC l Ï T / \ . • S ' — H T ' > i j 3 > ' r7 < S ilic o n 7 f S * à — Y P o w e r =7 > ' > * 9 T r a n s is t o r 2SA1156 P N P = * i Æ i f r f l 2 '> IJ □ > h ^ I i f f l 2SA115 6iiÜ 5igJtÜ5Ü Îi±x> f-yf V - ^ ^ y X ^ t , X ^ - y f- > ? " • I ^ ' j l U

sa0565

Abstract: BAIF4M BA1F4M
Contextual Info: r IV E C ^?T/\f7 ir S * S'—b a-g-h^ Compound Transistor BA1 F4M i£StrtlNPNxti?*'>7rJU •' m m ★ o T x iS f it £ L T ^ £ -to 4.0 ±0.2 6” R i = 22 k fi, R 2= 22 k f i ) 2 6’ -0.50 O B N 1 F 4 M £ =7 > 7 °'J / > ? U « ^ i # ( T a = n 25 °C )

nec 6101

Abstract: F530 T108 ga1a TC-6253 LA 5511
Contextual Info: 4# J. I /V l?v I Ih .T A NEC Iïf/\f7 C o m p o u n d T ran sis to r G N1A4Z ! mm « o ^ ^ T x f M ^ ^ l L T ^ i t o Ri = 10 kQ) m M M ± ^ ( T a = 25 °C) n a 9 v 9 "/ • * ^ 9 M ^ v B& s 9 £ -6 0 V ? F hT I ± V CEO -5 0 V V - V SÈ) 9 {£ 1? Ic(p u 1s e )

03P4MF

Abstract: nec scr 1031454
Contextual Info: NEC m = * T i\ r x zf— .r A S • 5/— h* Thyristor 03P4MF 0 .3 A " E -;u F S C R 03P4MF li, ^FJéj^>«SiE0.3 A « P r - l - M W i - ^ V, m 0 i l L h°— ? K SCR # # f ë ^ mm I 5.2 M AX. i 7 l l ± t ì 400 V T'1-„ it DO.5 o I GTS 1 0 0 ¿/A i o

UPD74HC08

Abstract: lt 420 sf 50 gg FE8B
Contextual Info: SEC M o s s i im s s M O S In te g ra te d C ircu it iiT / \ f 7 PD74HC08 QUAD 2 -IN P U T AND G A TE mo c s jii iit m U ¿ 0 - 5 1 t L T H fiP S? tl/tQ U A D 2 -IN P U T AND r - K ^ P D 7 4 H C 0 8 ii, M C M O S n y . y ; 7 r i y •9L S T T L ' j a ^ r -

2SC3616

Abstract: mar585m PA33
Contextual Info: NEC j '> IJ 3 > Silicon T ran sis to r 2SC3616 N P N l b ° ^ + '> 7 ;i/ i '> lJ b =7 > i> 7 . 9 N PN Silicon Epitaxial T ran sisto r High Gain A m plifier KW M W */ F E A T U R E S /P A C K A G E D IM E N S IO N S Unit : mm O i g j h p E ' C ’t ’ o

2SK470

Abstract: 2sk47 btt4
Contextual Info: SEC j i i r / W Z M O S Field E ffe ct P o w e r T ra n sisto r J _ 2SK470 v ^ — MOS F E T X f m I i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 7 0 ii, F E T t\ X f y f > d c > ;< — i 7 • - t — • 'J 1 / —

2SK462

Abstract: 53-AS M71E
Contextual Info: NEC j N ^ 1 -^ ^ ' ^ ' 7 y — M O S ? - > F E T ? m oLm m N-Channel MOS Field Effect Power Transistor Switching Industrial Use Afflili]/PA C K A G E DIMENSIONS 2S K462Ü , Unit : mm FETT-, * 7 f > D C - D C 3 V '* — ? , w m v m t i r n à * ¿6 , ¡ÎJS ÎÆ

ic ntp- 3000

Abstract: IIH13 Scans-0088096
Contextual Info: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o

R096

Abstract: FN1L4Z
Contextual Info: . SEC r i Ï T 7 / \ f -y-57 • 5 / - H A C om pound Transistor FN 1L4Z i&ifc 1*1I t P N p n : 4# > 'J=l> Hwm it o/< 4 - to 2 .8 ± 0 .2 Ri =47 kQ O FA 1 L4 Z t 1.5 ? > 7 ° ') / > ? ') T l f f f l T ' ë 0.65*0 1 ~ t„ ( T a = 25 °C ) m »&

Transistor BC 227

Abstract: TRANSISTOR BC 456 TRANSISTOR BC 413 AA1A4M PA33 T108 transistor BC 247 TRANSISTOR BC 413 b 3ete ATT 1177
Contextual Info: / 7 s— ^ - 2 / — h N EC i i r / \ f 7 J ^ Com pound Transistor AA1A4M Í A 1*1Ü # c N P N X '> ij =¡> h 7 V i > X ^ ® a ip - f i : mm o / < ^ T * íÉ # l ^ [*l/t L X ^ i i"o (R ! = 10 k ñ , R 2= 10 kQ) o AN1A4M t = J > V i ) S > ÿ i ) X î t m X è £ t o

transistor f630

Abstract: A-RV06 SI11E XR 2271 JTS03 sl 0565 r JT MARKING F630 h082 transistor bf 244
Contextual Info: NEC z r — S7 • S'— h C o m p o u n d T ra n sisto r FA1L3M Îâ iJ t F * 3 Îic N P N x b 0^ + ' > T ; P ^ ' > ' ; z ] > h ^ ^ X ^ ! $ « ^ - ÎÈ o / M T x f f i i Æ I mm 2.8 + 0.2 ÿ f l l L t i ^ t o 0.65- 1.5 (Ri = 4.7 k£2, R2= 4.7 kQ) o FN1L3M ¿ 3 > 7 i ) / / ^ ' J TWffl f S j t

2SK163

Abstract: 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466
Contextual Info: NEC j m = t= r iv r x J u n c t io n Field E ffe c t T r a n s is to r A 2SJ44 V 3 h = 7 > i> * 9 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Low Noise Amplifier ^ • » 0 / P A C K A G E D IM EN SIO N S ^/FEATU RES Unit : mm O ¡15I f EE, H i g h

Triac t460

Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
Contextual Info: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •

UPA79C

Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
Contextual Info: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ

2SC2958

Abstract: transistor AE 2SC2959 2SA1221 F0246
Contextual Info: NEC Aj m^Tjvrx '> i; =3 > h = 7 > i> 7 .9 Silicon T ra n sisto rs 2 S C 2 9 5 8 ,2959 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier ^•JgH/PACKAGE DIMENSIONS # g/FEA TU RES oTViDSïtfilèK K7 -Í 7", ¡ti* , MIE, is Ja I S t i . \f y 9 "j :y 3 >

ITE 8511

Abstract: MT 6235 3e tRANSISTOR transistor 3E ISK092 T108 transistor A4p 54 A04g la 5531
Contextual Info: C o m p o u n d T r a n s is to r GA1A4P ftwm mt : mm # m. 2 . 1 + 0. 1 ( R i = 10 f â , R 2= 4 7 kû) 1.25 ±0.1 )C 3 _ oG t rj N 1A 4P > 7° >J 9 y 9 >) T f ë f B T ë î t c (T a = m • a u ^ 'X ; ~ -y 9 i Hg. X fa H E E •;9Wi‘m±. ■ ^ V 9 9 % !ëÊ ( Ï Ë

IC-524

Abstract: l0246 ua53c PA53C T108 m561 upa53c DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEC Aj ! Ÿ ÎtC 'ê ' b -7 Com pound / \ f 7 T 9 T r a n s is to r /¿PA53C y — ' > Y > ~F U -f h NPN Silicon Epitaxial Darlington Transistor Array High Gain Amplifier /iPA53C!±, r - 'J y b > W ^ tlfz N P N affim i b 5 § è, W-MM Unit : mm) v'J= r>