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    IH 0565 R Search Results

    IH 0565 R Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    51940-565LF
    		Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 6P Vertical Receptacle. PDF
    90565-009LF
    		Amphenol Communications Solutions Minitek® 2.00mm, Board to Board, PCB mounted Receptacle, Vertical, Through Hole, Double Row, 8 Positions, 2.00mm (0.079in) Pitch.. PDF
    59202-S28-05-65LF
    		Amphenol Communications Solutions Minitek® 2.00mm, Board To Board, Unshrouded Vertical Header, Surface Mount, Double Row, 10 Positions. PDF
    10056526-001LF
    		Amphenol Communications Solutions Pwr TwinBlade® Cable Assemblies, Power Connectors, Right angle cable connector, 25mm2. PDF
    10130565-101LF
    		Amphenol Communications Solutions AirMax VS2®, Backplane Connectors, 4-Pair, 72 -position, pitch, 6 column, Right Angle. PDF

    IH 0565 R Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BA1A4P

    Abstract: T108 02-WM RSL AH transistorBA1A4P
    Contextual Info: r NEC i? f/ \ T A 5 ? — 57 • 5 /— b Compound Transistor BA1A4P ¡g N P N j : t ? ? * '> T JU S fe t # l 3 V V=7> i> X ? it '• mm) ★ Ri = 10 kQ, R2= 47 kQ) o BN1A4P T è t ~t0 lfe;ki*^#(Ta = 25 °C) II n u s ? 9 ?T 3 W ± . v i ; 7 y 3 u 3 ^ ^ ^


    OCR Scan     		CycleS50 BA1A4P T108 02-WM RSL AH transistorBA1A4P PDF

    AI820

    Abstract: 5886a ah506 AA1F4M l0422 PA33 T108 332I transistor et 454 TC-5886A
    Contextual Info: SEC i ï f / \ Y r 7 •J- ^ . C /-a - ê - h =7 V C o m p o u n d T ra n s is to r AA1 F4M ÎfiÎÆ F *3Ü cN P N xt°^41'> 7 '^ i f é ^ ,J 4# Y:7 > i > 7 . 9 i . mm, i t R i = 22 k Q , R 2= 22 k Q o AN1F4M t =t > ~7° 'J / > ? ij Ttë t l i t c


    OCR Scan     		SC-43B Cycled50 AI820 5886a ah506 AA1F4M l0422 PA33 T108 332I transistor et 454 TC-5886A PDF

    2SA1608

    Abstract: 2SC4173
    Contextual Info: NEC j m^Tfvrx A Silicon T ran sisto r _ 2SC4173 N P N ih N PN Silicon Epitaxial T ra n sisto r Audio Frequency A m p lifie r and Switching # i t O ftg | mii i t i 1 , X 't -y - f > 7", • &)§ iSigipM Ù ¿1a S t t c f if f l- C 'è 4" 11] i t o


    OCR Scan     		2SC4173 2SA1608 2SC4173 PDF

    2SA1156

    Abstract: TC-5548A T108 im0552
    Contextual Info: — ~t NEC l Ï T / \ . • S ' — H T ' > i j 3 > ' r7 < S ilic o n 7 f S * à — Y P o w e r =7 > ' > * 9 T r a n s is t o r 2SA1156 P N P = * i Æ i f r f l 2 '> IJ □ > h ^ I i f f l 2SA115 6iiÜ 5igJtÜ5Ü Îi±x> f-yf V - ^ ^ y X ^ t , X ^ - y f- > ? " • I ^ ' j l U


    OCR Scan     		2SA1156 O-126 PWS300 TC-5548A 2SA1156 TC-5548A T108 im0552 PDF

    UPD74HC08

    Abstract: lt 420 sf 50 gg FE8B
    Contextual Info: SEC M o s s i im s s M O S In te g ra te d C ircu it iiT / \ f 7 PD74HC08 QUAD 2 -IN P U T AND G A TE mo c s jii iit m U ¿ 0 - 5 1 t L T H fiP S? tl/tQ U A D 2 -IN P U T AND r - K ^ P D 7 4 H C 0 8 ii, M C M O S n y . y ; 7 r i y •9L S T T L ' j a ^ r -


    OCR Scan     		uPD74HC08 /iuPD74HC08C /iuPD74HC08G uPD74HC08G-T1 lt 420 sf 50 gg FE8B PDF

    2SC3616

    Abstract: mar585m PA33
    Contextual Info: NEC j '> IJ 3 > Silicon T ran sis to r 2SC3616 N P N l b ° ^ + '> 7 ;i/ i '> lJ b =7 > i> 7 . 9 N PN Silicon Epitaxial T ran sisto r High Gain A m plifier KW M W */ F E A T U R E S /P A C K A G E D IM E N S IO N S Unit : mm O i g j h p E ' C ’t ’ o


    OCR Scan     		2SC3616 PWS10 Cycled50 SC-43B 2SC3616 mar585m PA33 PDF

    2SK462

    Abstract: 53-AS M71E
    Contextual Info: NEC j N ^ 1 -^ ^ ' ^ ' 7 y — M O S ? - > F E T ? m oLm m N-Channel MOS Field Effect Power Transistor Switching Industrial Use Afflili]/PA C K A G E DIMENSIONS 2S K462Ü , Unit : mm FETT-, * 7 f > D C - D C 3 V '* — ? , w m v m t i r n à * ¿6 , ¡ÎJS ÎÆ


    OCR Scan     		2SK462 2SK462Ã CycleSi50 2SK462 53-AS M71E PDF

    ail4m

    Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
    Contextual Info: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±


    OCR Scan     		Ta-25Â ail4m FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M PDF

    ic ntp- 3000

    Abstract: IIH13 Scans-0088096
    Contextual Info: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o


    OCR Scan     		IEI-620) PWS10 TC-6083A ic ntp- 3000 IIH13 Scans-0088096 PDF

    R096

    Abstract: FN1L4Z
    Contextual Info: . SEC r i Ï T 7 / \ f -y-57 • 5 / - H A C om pound Transistor FN 1L4Z i&ifc 1*1I t P N p n : 4# > 'J=l> Hwm it o/< 4 - to 2 .8 ± 0 .2 Ri =47 kQ O FA 1 L4 Z t 1.5 ? > 7 ° ') / > ? ') T l f f f l T ' ë 0.65*0 1 ~ t„ ( T a = 25 °C ) m »&


    OCR Scan     		CycleS50 R096 FN1L4Z PDF

    UPA79C

    Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
    Contextual Info: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ


    OCR Scan     		uPA79C PA79C UPA79C PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204 PDF

    2SC2958

    Abstract: transistor AE 2SC2959 2SA1221 F0246
    Contextual Info: NEC Aj m^Tjvrx '> i; =3 > h = 7 > i> 7 .9 Silicon T ra n sisto rs 2 S C 2 9 5 8 ,2959 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier ^•JgH/PACKAGE DIMENSIONS # g/FEA TU RES oTViDSïtfilèK K7 -Í 7", ¡ti* , MIE, is Ja I S t i . \f y 9 "j :y 3 >


    OCR Scan     		2SC2958 2SC2959 2SA1221, A1222 A1221/2SC2958 ---2SA1222/2SC2959 2SC2958 transistor AE 2SC2959 2SA1221 F0246 PDF

    ITE 8511

    Abstract: MT 6235 3e tRANSISTOR transistor 3E ISK092 T108 transistor A4p 54 A04g la 5531
    Contextual Info: C o m p o u n d T r a n s is to r GA1A4P ftwm mt : mm # m. 2 . 1 + 0. 1 ( R i = 10 f â , R 2= 4 7 kû) 1.25 ±0.1 )C 3 _ oG t rj N 1A 4P > 7° >J 9 y 9 >) T f ë f B T ë î t c (T a = m • a u ^ 'X ; ~ -y 9 i Hg. X fa H E E •;9Wi‘m±. ■ ^ V 9 9 % !ëÊ ( Ï Ë


    OCR Scan     		CycleS50 ITE 8511 MT 6235 3e tRANSISTOR transistor 3E ISK092 T108 transistor A4p 54 A04g la 5531 PDF

    IC-524

    Abstract: l0246 ua53c PA53C T108 m561 upa53c DARLINGTON TRANSISTOR ARRAY
    Contextual Info: SEC Aj ! Ÿ ÎtC 'ê ' b -7 Com pound / \ f 7 T 9 T r a n s is to r /¿PA53C y — ' > Y > ~F U -f h NPN Silicon Epitaxial Darlington Transistor Array High Gain Amplifier /iPA53C!±, r - 'J y b > W ^ tlfz N P N affim i b 5 § è, W-MM Unit : mm) v'J= r>


    OCR Scan     		uPA53C /iPA53C! 300mAfM 2000iil IC-524 l0246 ua53c PA53C T108 m561 upa53c DARLINGTON TRANSISTOR ARRAY PDF

    SD113

    Abstract: SD116 d11510 50117 SD117 SD115 042646 SD111 1866 sd1173
    Contextual Info: S 1 D 1 3 , S 1 D R 1 5 . S i S o f f ia SD 1 1 6 , 1 6 D 1 1 7 , S f it NEC Corporation 1988 : mm SD 1 1 7 vi^DHD (D o u b le H e a tsin k 7 ^ 'y — 1 K m SD 1 1 3 , SD 1 1 5 , D D io d e) ÿ 0.5 t f ¿ , -, sxnt £ & ^ è U "? T M & t ^ , f ^ i i i D H D f l l & i C j :


    OCR Scan     		SD113 SD115 SD116 SD117 sd113, sd115, sd116, d11510 50117 SD117 042646 SD111 1866 sd1173 PDF

    HT - 0886

    Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
    Contextual Info: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2


    OCR Scan     		PWS10 CycleS50 HT - 0886 HT 0886 g3je ht 9366 MARKING LE50 T108 PDF

    NEC AC03D

    Abstract: AC03 nec TRIAC AC03 NEC AC03F 7504b SC-7504B triac ac03d nec AC03 AC03F ac03d
    Contextual Info: - f — S 7 • 5/— h NEC r Ì Ì T / \ fZ AC03DJM, AC03DJM-Z AC03FJ M , AC03FJ M -Z 3 A "E— AC03r jJM , AC03r jJM ~Zi± , TRIAC > « ? Îl 3 A K T R IA C t \ ^ O ü L t °- ^ ^ 7 * J ± i ± 400 V, 600 V -üto #Ît o/n^-7'U .y K IC lc ftM & ffiÿ tifê H AC03r


    OCR Scan     		rAC03DJM, AC03DJM-Z AC03FJ AC03r ul94v-o) AC03DJM, NEC AC03D AC03 nec TRIAC AC03 NEC AC03F 7504b SC-7504B triac ac03d nec AC03 AC03F ac03d PDF

    2SK831

    Abstract: T108 T460 2SK83
    Contextual Info: M o s h = 7 > > ^ M O S Field E ffe c t P o w e r T ra n s is to r N f - t ^ /N° 7 - M O S FET i i f f l 2SK831 ü , t ì s t a f f i < , N - f -v x X / > h -i •/ - f > ¿ 'I i t t i - « B ' ' OT7 — M O S F E T T ' + > 1 , r H I T O m : mm) «5 3.2 + 0.2


    OCR Scan     		2SK831 2SK831 T108 T460 2SK83 PDF

    F0534

    Abstract: Hx460 H150 fa1l3n TC-6110 L82 NEC tfl06
    Contextual Info: NEC C o m p o u n d T ra n sisto r m ^ T i x t x FAI L3N m / L f t M N P N i : cP # V j Ê £ J 3 £ X 'f 'y ? ‘ > Z X > Y ^ > Ï > * ? ? M m . & m m t : mm 2 .8 ± 0.2 ( R i = 4 .7 kG , 1.5 R 2 = 10 k i2 ) O F N 1 L 3 N t => > 7 " >j / > ? I) T ' f t ' f f l T ' ë £ 1 “ 0


    OCR Scan     		PWS10 F0534 Hx460 H150 fa1l3n TC-6110 L82 NEC tfl06 PDF

    TRANSISTOR XL08

    Abstract: XL08 TI08 T46C lj11 T 3361 001
    Contextual Info: X I • I ÎS NEC m C o m p o u n d T ra n s is to r GN 1L3Z U□ > Y=7>i>^ JS if c r t i P N P x f t 9mH i t * e : mm o '< 4 t (R i = 4 .7 kQ ) B O— W V R, k? — ô E o GA1L3Z t 3 >7° U ^ > ? U T'fêfflT'ë i 1“ c (T a = 25 °C) m 3- 9 ì "/ ^ s


    OCR Scan     		CycleS50 TRANSISTOR XL08 XL08 TI08 T46C lj11 T 3361 001 PDF

    2SA1462

    Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
    Contextual Info: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,


    OCR Scan     		2SA1462 o2SC3735 2SA1462 JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor PDF

    2SC1841

    Abstract: transistor 2sc1841 ct 3f5 1 PA33
    Contextual Info: b L fJrisT JU M is N P N x »J U > h ^ > > 7 . 9 f e M ìÈ L m iR m 4# it JMfc : m m o { a i f i i i i p i , { g à i ® * -i •/ -f - > x im x -è o R B tŒ , 7, so mA tv<7)&mk ÿ4 rm 1 1 it e Î5 h F E £ < 7 )-f, ® Î I J # l i ' l J S * i n T tb T "i'o


    OCR Scan     		2SC1841 I-125 SC-43 2SC1841 transistor 2sc1841 ct 3f5 1 PA33 PDF

    2SK853

    Abstract: 2SK853A 2SK85 L0722
    Contextual Info: SEC Junction Field Effect Transistors 2 S K 8 5 3 .8 5 3 A ¡ a & * ts , i& m » * * ♦ § « N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier, Audio Frequency Amplifier f t : mm f t O ftß jfö ig ia . 7 t D / x f / f . I T


    OCR Scan     		2SK853, 2SK853A 2SK853 T10908 2SK853A 2SK85 L0722 PDF

    HHB8

    Contextual Info: 7— / v fc S * S ' — h* m Com pound Transistor i? T / \ f 7 4# BAI F4N ! mm ★ » o s<4 r x t s t / t £ i*ui l x ^ £ i"c Ri = 22 kfì, R2= 47 k£2) o BN1F4N t ^ > "7° ij / > 9 'J T'féffl T"^ £ i " t Ì 6 Ì Ì * * S # ( T a = 25 °C) il -?- aE #


    OCR Scan     		PWiS10 HHB8 PDF