IGSA Search Results

bc556 equivalent

Abstract: K2223
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • DC Characteristic Adjustable Transmit and Receive Gain Adjustable Symmetrical Input of Microphone Amplifier Anti-clipping in Transmit Direction Automatic Line-loss Compensation

loud speaker

Abstract: BC177 NPN transistor datasheet BC177 SDIP30 U4089B U4089B-M U4089B-MFN U4089B-MFNG3 U4089B-MSD SSO44
Contextual Info: U4089B-M Monolithic Integrated Feature Phone Circuit Description The telephone circuit U4089B-M is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit, sidetone equivalent and ear protection rectifiers. The circuit is

GAL-5

Contextual Info: PBL 4032001 05 January PBL 403 05 Multiband GSM Power Amplifier Description. Key features. The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm output power at GSM900 and more than 31.5 dBm output power at DCS1800 or

Contextual Info: SAMSUNG ELECTRONICS INC 42E » 7=^4142 DQIOTST G ÊSSMGK P R ELIM INA R Y “ BiCMOS SRAM KM68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation

Contextual Info: VND670SP Dual high-side switch with dual Power MOSFET gate driver bridge configuration Features Type RDS(on) IOUT VCC VND670SP 30mΩ(1) 15A(1) 40V ) s ( ct 10 1. Per each channel. 1 u d o PowerSO-10 • 5V logic level compatible inputs ■ Gate drive for two external power MOSFET

8059 microcontroller

Abstract: 7905 voltage regulator diode.18 7905 regulator 7905 voltage regulator datasheet ST 7905 Datasheet and application notes TEMIC U4090B Transistor BC177 BC177 BC556
Contextual Info: U4090B Monolithic Integrated Feature Phone Circuit Description The µc-controlled telephone circuit U4090B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit, tone ringer interface with DC/DC converter, sidetone

Contextual Info: FINAL COM’L : -7/10/12/15 IN D :-10/12/14/18 MACH 4-64/MACH4LV-64 B E Y O N D P E R FO R M A N C E High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 44 pins in PLCC, 44 and 48 pins in TQFP

Contextual Info: KSV3208 LINEAR INTEGRATED CIRCUITS HIGH-SPEED A/D CONVERTER The S am sung KSV3208, VLSI c irc u it in Cl C o lle cto r Im planted technology, c o n s is ts o f a high-speed flash-type 8-bit A/D converter. Also, th e various a u xilia ry c irc u its such as reference volta ge sou rces, pre­

transistor BUT

Abstract: 11apx transistor Transistor Vb TRANSISTOR K 135 J 50 silicon transistor npn 395 bsat
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

Contextual Info: SAMSUNG ELECTRONICS INC M2E J> H T^mMS Q O l Q ^ b fi HS tlC K - KM69B257 p R E U M iN A R Y BiCMOS SRAM 3 2 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Times —Commercial: 10ns, 12ns, 15ns, 20ns —5ns & 6ns Output Enable times

Contextual Info: PRELIMINARY CMOS MASK ROM KM23C16100FP 16M-Bit 2M X 8/1 M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time Random access: 150ns (max.) Page access: 70ns (max.)

Contextual Info: DRAM MODULES KMM5401000A/AG 1 M X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5401000A is a 1M bits X 40 Dynamic RAM high density memory module. The Sam­ sung K M M 5401000A consist of ten CMOS 1M X 4

piezo speaker datasheet

Abstract: bc556 equivalent 7905 voltage regulator 7905 regulator BC177 BC556 SD103A U4090B U4090B-NFN U4090B-NFNG3
Contextual Info: U4090B Monolithic Integrated Feature Phone Circuit Description The µc-controlled telephone circuit U4090B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit, tone ringer interface with DC/DC converter, sidetone

20KHZ

Abstract: AN515 VND670SP
Contextual Info: VND670SP  DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION TYPE VND670SP • RDS(on) 30 mΩ IOUT 15 A VDSS 40 V OUTPUT CURRENT:15A PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUTS GATE DRIVE FOR TWO EXTERNAL POWER MOS ■ UNDERVOLTAGE AND OVERVOLTAGE

nec A2C

Abstract: 8160l1
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

IGO tv circuit diagram

Abstract: 412hs
Contextual Info: FINAL COM'L: -7/10/12/15 IND: -10/12/14/18 MACH 4-64/MACH4LV-64 BEYON D PER FO R M A N C E High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ 44 pins in PLCC, 44 and 48 pins in TQFP 64 macroceils 7.5 ns tpQ Commercial, 10 ns tpD Industrial

Contextual Info: FINAL BEYOND PERFOR M A N CE COM’L: -7/10/12/15 I ND:-10/12/14/18 M A C H 4 -2 5 6 /M A C H 4 L V -2 5 6 High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 208 pins in PQFP, 256 pins in BGA

3A, 50V BRIDGE

Abstract: VN67 VN670SP
Contextual Info: VND670SP  DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION TYPE VND670SP • RDS(on) 30 mΩ IOUT 15 A VDSS 40 V OUTPUT CURRENT:15A PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUTS GATE DRIVE FOR TWO EXTERNAL POWER MOS ■ UNDERVOLTAGE AND OVERVOLTAGE

open load detection in MOSFET half bridges

Abstract: AN515 VN670SP VND670SP VND670SP13TR VN67
Contextual Info: VND670SP Dual high-side switch with dual Power MOSFET gate driver bridge configuration Features Type RDS(on) IOUT VCC VND670SP 30mΩ(1) 15A(1) 40V 10 1. Per each channel. 1 PowerSO-10 • 5V logic level compatible inputs ■ Gate drive for two external power MOSFET

VND670SP

Abstract: Thermal Shut Down Functioned MOSFET 20KHZ AN515
Contextual Info: VND670SP  DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION TYPE VND670SP • RDS(on) 30 mΩ IOUT 15 A VDSS 40 V OUTPUT CURRENT:15A PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUTS GATE DRIVE FOR TWO EXTERNAL POWER MOS ■ UNDERVOLTAGE AND OVERVOLTAGE

GT atten

Abstract: 100U A115A BC177 U4089B-P U4089B-PFNG3Y U4089B-PFNY 4518C
Contextual Info: Features • • • • • • • • • • • • • • • • Adjustable DC Characteristic Transmit and Receive Gain Adjustable Symmetrical Input of Microphone Amplifier Anti-clipping in Transmit Direction Automatic Line-loss Compensation Built-in Ear Protection

Contextual Info: PRELIMINARY COM'L: -7/10/12/15 IND: -10/12/14/18 MACH 4-192/MACH4LV-192 BEYO N D PERFO RM AN CE High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ 144 pins in TQFP 192 macrocells 7.5 ns tPD Commercial, 10 ns tpD Industrial

gc 301

Abstract: selen-gleichrichter GAZ17 GY125 GD244 VEB M ik ro e le k tro n ik 04A657 ITT transistoren ga106 selen
Contextual Info: Erläuterung der Kurzzeichen von Halbleiterbauelem enten Transistoren B b C 1 15 C 22 b C 1h 2 i ä f h2 1o fT f F 1121 o | Il I2Tj| I E> Im o 11 • i>; o le n s IrKV Io Ic I K Bo In I d l^tot B ung Basisschaltung, Basis E in g an g sk ap azität MOS -FE T )

nf734

Abstract: KW C2L5L1.TE-6P5Q-EBVF46FCBB46-0-VL KW C3L5L1.TE-6Q5R-EBVF46FCBB46-0-VL BC177 BC556 SD103A U4092B U4092B-SD RGT240 KW C2L5L1.TE-7P5Q-EBXD46EBZB46-0-VL
Contextual Info: U4092B TELEFUNKEN Semiconductors Monolithic Integrated Feature Phone Circuit Description The µc controlled telephone circuit U4092B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit,