IGBT WELDING Search Results
IGBT WELDING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) | Datasheet | ||
GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS | Datasheet | ||
GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS | Datasheet |
IGBT WELDING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT INT-A-PAK, Trench PT IGBT , 100 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Trench PT IGBT technology • • • • • • INT-A-PAK BENEFITS • Optimized for high current inverter stages (AC TIG welding |
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VS-GP100TS60SFPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
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O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 | |
IKW40N120H3
Abstract: IKW40N60 30100 transistor IKW25N120H3 welding inverter IKW40N120T2 Induction Heating Resonant Inverter IGW40N120H3 IKW50N60T IKW40N60H3
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IGpccN60H3 IGpccN120H2 IGpccN120H3 IGpccN60T. IGpccN100T IGpccT120. IGpccN120 IHpccN60T. IHpccT60. IHpccN90T IKW40N120H3 IKW40N60 30100 transistor IKW25N120H3 welding inverter IKW40N120T2 Induction Heating Resonant Inverter IGW40N120H3 IKW50N60T IKW40N60H3 | |
VS-GT105LA120UXContextual Info: 600/650 V and 1200 V, 50 A to 250 A IGBT Modules 600/650 V and 1200 V, up to 250 A IGBT Modules in SOT-227 Package High efficiency IGBT Modules featuring SOT-227 standard outline. A choice of PT, NPT and Trench IGBT technologies allows usage in switching frequencies from |
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OT-227 OT-227 VS-GT120DA65U VS-GT140DA60U VS-GA200SA60UP VS-GB55LA120UX VS-GP250SA60S VS-GB55NA120UX VS-GB75LA60UF VS-GB75NA60UF VS-GT105LA120UX | |
kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
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DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor | |
DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
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4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34 | |
GC 72 smd diodeContextual Info: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses |
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50MT060ULSTAPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GC 72 smd diode | |
GC 72 smd diodeContextual Info: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses |
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50MT060ULSTAPbF E78996 2002/95/EC 11-Mar-11 GC 72 smd diode | |
Contextual Info: VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery |
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VS-70MT060WHTAPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses |
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50MT060ULSTAPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
ultrafast igbt
Abstract: 50mt060ulstapbf GC smd diode 94540
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50MT060ULSTAPbF E78996 2002/95/EC 18-Jul-08 ultrafast igbt 50mt060ulstapbf GC smd diode 94540 | |
Contextual Info: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses |
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50MT060ULSTAPbF E78996 2002/95/EC 11-Mar-11 | |
Contextual Info: VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery |
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VS-70MT060WHTAPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
VS-GA200HS60S1PBFContextual Info: VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge IGBT Standard Speed IGBT , 200 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Very low conduction losses • Industry standard package |
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VS-GA200HS60S1PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GA200HS60S1PBF | |
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M57962AL
Abstract: DATA SHEET OF IGBT IGBT control circuit igbt welding igbt wiring Igbt 15kV 600A M57962 "IGBT Driver" IGBT with V-I characteristics OPTO COUPLER
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QC962 QC962 pin13 pin14 3300pF 51MAX 10MAX M57962AL DATA SHEET OF IGBT IGBT control circuit igbt welding igbt wiring Igbt 15kV 600A M57962 "IGBT Driver" IGBT with V-I characteristics OPTO COUPLER | |
Contextual Info: VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP Warp Speed IGBT , 50 A FEATURES • Gen 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses |
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VS-25MT060WFAPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
VS-GA100TS60SFPBFContextual Info: VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors “Half-Bridge” IGBT INT-A-PAK, Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery |
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VS-GA100TS60SFPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GA100TS60SFPBF | |
Diode smd code EXPContextual Info: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC |
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I27247 70MT060WHTAPbF 150kHz Diode smd code EXP | |
Contextual Info: VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses |
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VS-50MT060WHTAPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Warp Speed IGBT , 50 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses |
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VS-25MT060WFAPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Bulletin I27247 08/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC • Al2O3 DBC |
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I27247 70MT060WHTAPbF 150kHz | |
Contextual Info: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC |
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I27247 70MT060WHTAPbF 150kHz 12-Mar-07 | |
GB50NA120UXContextual Info: GB50NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 |
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GB50NA120UX OT-227 E78996 2002/95/EC OT-227 18-Jul-08 GB50NA120UX | |
Contextual Info: 70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery • SMD thermistor (NTC) |
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70MT060WHTAPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |