IGBT PINOUT Search Results

C 4977

Abstract: ON 4977 3 phase IGBT gate driver 1200 3 phase IGBT gate driver 4977 IGBT gate driver ic DS34C87 SPM6G140-060D OF IGBT
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

4100 data sheet

Abstract: IGBT gate driver ic 210C DS34C87 SFH6186-4 SPM6G120-120D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

driver igbt high side 1500V

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 REV.A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

C 4977

Abstract: ON 4977 SPM6G140-060D
Contextual Info: SENSITRON _ SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

SPM6G140-060D

Abstract: C 4977 IGBT DRIVER Analog Devices Brake cleaner 210C bi-directional switches IGBT ON 4977
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA DATASHEET 4977, Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

SPM6G120-120D

Abstract: 210C 3 pins Variable resistor 5K ohm
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA DATASHEET 4100, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

3 phase IGBT gate driver

Abstract: 3 phase IGBT gate driver 1200 4100 opto coupler high side IGBT driver IGBT gate driver ic opto-isolators current sensor DS34C87 SFH6186-4 SPM6G120-120D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

TTRN-3825H

Contextual Info: Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3%

pm20cma060

Abstract: 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram
Contextual Info: International fegjRectifier PD 9128 provisional_ PM20CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 3 kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED”™ Ultratast, Soft Recovery

4kv flash trigger coil 4 pin

Abstract: toshiba datecode GRM155R61A105 TTRN-3825H marking code onsemi Z Diode LDT4520T-01 GT8G133 TTRN-3825 TIG058E8 TTRN-3822
Contextual Info: Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3%

3 phase IGBT gate driver 1200

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. A.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

C 4977

Abstract: 50 amp igbt 210C DS34C87 SFH6186-4 SPM6G140-060D ON 4977
Contextual Info: SENSITRON _ SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. A.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

ultrafast n channel 600v 20a IGBT

Contextual Info: International IMlRecbfier provisional P D -9.1284 IPM2060 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 3 kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast" IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes,

IPM1560

Abstract: high side IGBT driver optocoupler
Contextual Info: P D -9.1283 International S Rectifier PROVISIONAL IP M 1 56 0 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 2kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast“ IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes.

VS-GT175DA120U

Contextual Info: VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 175 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

VS-GT175DA120U

Abstract: A 3150 igbt driver
Contextual Info: VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 175 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

A 3150 igbt driver

Abstract: VS-GT140DA60U 60APH06
Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse

5732

Abstract: DATA SHEET OF SEMICRON IGBT SML150FBH06 igbt semicron
Contextual Info: SML150FBH06 SUPERFAST 3 PHASE NPT-IGBT BRIDGE MODULE IN A HERMETICALLY SEALED METAL PACKAGE FEATURES • N CHANNEL, HOMOGENEOUS SILICON STRUCTURE NPT – NON PUNCH THROUGH IGBT . • LOW TAIL CURRENT WITH LOW TEMPERATURE DEPENDANCE. • HIGH SHORT CIRCUIT CAPABILITY

tyco igbt

Abstract: tyco igbt module tyco igbt module 15A P503-F-PM igbt tyco IGBT full bridge schematics tyco igbt module 20A tyco igbt module 35A p500-F-PM tyco module 15a 600v
Contextual Info: Fast switching H bridge Module fastPACK 0 H Features/ Eigenschaften - 1 phase fast switching IGBT + FRED full bridge 1 phase fast switching IGBT + FRED asymmetric bridge optional NTC temperature sensor Tyco Electronics Rupert-Mayer-Str. 44, D-81359 München

tyco igbt module 25A

Abstract: tyco igbt module 25A 1200V tyco igbt module 15A tyco igbt module tyco igbt tyco P487 tyco igbt P487 p487 tyco igbt p483 V23990-P48X-A
Contextual Info: Standard Power Integrated Module flowPIM 1 trench IGBT Features/ Eigenschaften - 3 phases Input Rectifier 3 phases inverter trench IGBT + FRED NTC Tyco Electronics Rupert-Mayer-Str. 44, D-81359 München power.switches@tycoelectronics.com flowPIM® 1 V23990-P48X-A

TSV944

Abstract: smd transistor w16 UM0969 STGIPS10K60A ntc 10 epcos RC06 series W12 hall sensor W16 SMD transistor stm32 encoder VIPer16 applications
Contextual Info: UM0969 User manual 3-phase motor control demonstration board featuring IGBT intelligent power module STGIPS10K60A Introduction This document describes the 1 kW 3-phase motor control demonstration board, featuring the STGIPS10K60A: 600 V - 10 A IGBT Intelligent power module. The demonstration board

semikron skiip 24 nab 125 t 12

Abstract: semikron skiip 31 nab 125 t 12 Semikron skiip 31 nab 12 T 10 skiip nab 125 skiip 31 nab 125 t 12 semikron skiip 83 AC 12 it skiip 24 nab 125 t 12
Contextual Info: SKiiP 11NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 1 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections

Contextual Info: 10-FZ06NBA084FP-M306L48 preliminary datasheet flow Boost0 600V/84A PS* Features flow0 12mm housing ● *PS: 2x84A parallel switch 75A IGBT and 99mΩ C6 ● ultrafast IGBT with C6 MOSFET and SiC buck diodes ● symmetric booster ● ultra fast switching frequency

DC/DC Converter

Abstract: Mornsun
Contextual Info: DC/DC Converter for IGBT Driver QAW Series 4.8W, Wide input, isolated & regulated dual output, IGBT dedicated DC-DC converter FEATURES 2:1 wide input voltage range Efficiency up to 85% Up to 3KVDC isolation Short circuit protection Output over-voltage protection