IGBT FF 75 R Search Results

FZ 77 1000

Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
Contextual Info: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5

2MB150N-060

Abstract: 2mb175n-060 2mb1300n-060 2mb1200n-060 P607 IGBT 400 amp 150 VOLT 10 AMP IGBT circuit 2mb175n 2mb1150 2mb1200n 120
Contextual Info: Hl B2 3Ö7 TE OOQB' ns 7MO • THIRD GENERATION IGBT I Low Saturation Voltage ■ Short Circuit Limiting ■ Low Switching Losses ■ Square RBSOA ■ Less Total Power Dissipation ■ Minimized Internal Stray Inductance 600 VOLT, N-SERIES SINGLE MODULES • 400 & 600 Amp

Contextual Info: 6MBP75RA120 1200V / 75A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection

6MBP75RA120

Abstract: fuji 3 kV IGBT
Contextual Info: 6MBP75RA120 1200V / 75A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection

7MBP75TEA

Contextual Info: 7MBP75TEA060 600V / 75A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

7MBP75TEA060

Abstract: AC200V AC2500
Contextual Info: 7MBP75TEA060 600V / 75A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

Contextual Info: 7MBP75TEA060 600V / 75A 7 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

Contextual Info: APT50GF120B2R APT50GF120LR 1200V 80A A dvanced P o w er Te c h n o l o g y APT50GF120B2R Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.

24v 125A IGBT

Contextual Info: s e M IK R O n AC, 1min Operating / stor. tem perature c/ —I vV jso l 4) S’ Conditions1’ o Symbol o— I SKiiP 3-phase bridge Absolute Maximum Ratings Values Units 3000 V -25.+85 °c 1200 V V A IGBT and Inverse Diode VcES Operating DC link voltage

FF400R17KF6CB2

Abstract: IGBT FF 300 igbt ff 75 r
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

Contextual Info: 6MBP75TEA060 600V / 75A 6 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

Contextual Info: 6MBP75TEA060 600V / 75A 6 in one-package Econo IPM series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection

Contextual Info: HGTP1N120BND, HGT1S1N120BNDS S e m iconductor D ata S h eet F eb ru ary 1999 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

IGBT FF 300

Abstract: diode 1700v eupec igbt FF400R17KF6CB2 KF6C
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

6MBP50RA120

Abstract: IGBT 6MBP50RA120
Contextual Info: 6MBP50RA120 1200V / 50A 6 in one-package IGBT-IPM R series Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection

IGBT FF 450

Abstract: tca600
Contextual Info: • IGBT MODULES<TRENCH GATE Max. ratings Type No. V ces CM600HA-5F CM350DU-5F ★* lc fWQ: secfio Pc Tj IGBT sections s WOrsseBons lE vœ fts) (/*&) 3.9 1.4 o c (V) (ns) 2.0 300 o A j CAÌ ÎW) fc ) (A) 250 ; 450 735 150 450 1.7 250 t 600 960 150 600

14N60E

Contextual Info: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged

GA75TS60U

Contextual Info: International I«R Rectifier PD -5.050B PR E LIM IN A R Y "HALF-BRIDGE” IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT F eatu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

SK4100

Contextual Info: V i» * * :» J ;j i\l t ! Y , HAL= , , '_^-o l.J B R ID G E >OWEh< u i U O t H Y B R ID 4100 8170 Thompson Road Cícera N.Y. 13039 > MIL-STD-1772 CERTIFIED FEATURES: • • • • • • • 315) 689-9201 600V, 30 Amp Capability Ultra Low Thermal Resistance - Junction to Casa - 0.5°C/W

Contextual Info: APT50GF60BR A dvanced P o w er Te c h n o l o g y 600V 75A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.

PM75RHA060

Abstract: 2 anode igbt inverter circuit diagram 24 volt dc to 230 volt ac inverter 72T4 BP107 220 Volt dc to ac ups circuit diagram
Contextual Info: PO 111ER EX INC _ SIE D • 7 2 R 4 b2 1 O O O S b ^ b T7M H P R X PM 75RHA060 T * 5 7 -2 J Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln tB llim O C f^ ^ -3 M o d u l u s Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 j ^ re e phase + Brake

IRGKI120F06

Contextual Info: International I ®]Rectifier PD-9.966C IRGKI120F06 "CHOPPER" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all "tail” losses

N60E

Contextual Info: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP21N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

Contextual Info: International ìor!Rectifier PD - 5.031 CPV362MM Short Circuit Rated Fast IGBT IGBT SIP MODULE Features • Short Circuit Rated - 1 0^is @ 125°C, V ge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses